Texas Instruments TC281-30, TC281 Datasheet

TC281

1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

High-Resolution, Solid-State Frame-Transfer Image Sensor

11.3-mm Image Area Diagonal

1000 (H) x 1000 (V) Active Elements

Up to 30 Frames per Second

8-µm Square Pixels

Low Dark Current

Advanced Lateral-Overflow-Drain Antiblooming

Single Pulse Image Area Clear Capability

Dynamic Range ... More than 60 dB

High Sensitivity and Quantum Efficiency

Nondestructive Charge Detection Through Texas Instruments (TI) Advanced BCD Node Technology

High Near-IR and Blue Response

Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC281 is a frame-transfer charge-coupled-device (CCD) image sensor that provides a very high-resolution image acquisition capability for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The image sensing area measures 8 mm horizontally and 8 mm vertically; the image-area diagonal measures 1 1,3 mm and the sensor has 8-µm square pixels. The image area contains 1000 active lines with 1000 active pixels per line. The dark reference signal can be obtained from ten dark reference lines located between the image area and the storage area, 28 dark reference pixels located at the left edge of each horizontal line, and 8 dark reference pixels located at the right edge of each horizontal line.

The storage section of the TC281 contains 1010 lines with 1036 pixels per line. The area is protected from exposure to light by a metal layer. Photoelectric charge that is generated in the image area of the sensor can be transferred into the storage section in less than 110 µs. After the image capture is completed (integration time), the image readout is accomplished by transferring charge, one line at a time, into the serial register located below the storage area. The serial register contains 1036 active pixels and 9 dummy pixels. The maximum serial-register data rate is 40 megapixels per second. If the storage area needs to be cleared of all charge, charge may be quickly transferred across the serial registers into the clearing drain located below the register.

A high performance bulk charge detection (BCD) structure converts charge from each pixel into an output voltage. A low-noise, two-stage, source-follower amplifier further buffers the signal before it is sent to the output pin. A readout rate of 30 frames per second is easily achievable with this device.

The blooming-protection of the sensor is based on an advanced lateral-overflow-drain structure (ALOD). The antiblooming function is activated when a suitable dc bias is applied to the overflow-drain pin. With this type of blooming protection it is also possible to clear the image area of charge completely. This is accomplished by providing a single 10V pulse of at least 1 µs duration to the overflow-drain pin.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

SUB 1

ODB 2

IAG 3

SUB 4 SAG 5 SAG 6

SUB 7

OUT 8 ADB 9

CDB 10

VGATE 11

22 SUB 21 TDB 20 IAG 19 SUB 18 SUB 17 SUB 16 NC 15 SRG 14 TRG 13 VSOURCE 12 RST

TI is a trademark of Texas Instruments Incorporated.

TC281 1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

The TC281 uses TI-proprietary advanced virtual-phase (A VP) technology , the advanced lateral-overflow-drain structure, and the BCD detection node. These features provide the TI image sensing devices with a high blue response, high near-IR sensitivity, low dark current, high photoresponse uniformity, and a single-phase clocking. The TC281 is characterized for operation from -10_C to 45_C.

functional block diagram

Top Drain

Image Area

Storage Area

Serial Register

and Transfer Gate

Clearing Drain

15 14

TDB

Amplifier

ODB

IAG

SAG

SOURCE

ADB

OUT

RST

gate

CDB

IAG

SAG

SRG TRG

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TC281

1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

sensor topology diagram

1000 Pixels

28 Pixels 8 Pixels

1000 Lines

10 Lines

1010 Lines

1 Pixel1 Pixel

1 Dummy Pixel

10369

Dummy Pixels

Terminal Functions

TERMINAL

NAME NO.

I/O

DESCRIPTION

ADB 9 I Supply voltage for amplifier-drain bias CDB 10 I Supply voltage for clearing-drain bias IAG 3, 20 I Image area gate NC 16 No connect ODB 2 I Supply voltage overflow-drain antiblooming bias OUT 8 O Output signal RST 12 I Reset gate SAG 5, 6 I Storage area gate SRG 15 I Serial register gate 1

SUB

1, 4, 7, 17,

18, 19, 22

Substrate and clock return

TDB 21 NC Supply voltage for top-drain bias TRG 14 I Transfer gate VGATE 11 I Bias voltage for the gate of the BCD node VSOURCE 13 I Bias voltage for the source of the BCD node

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TC281 1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Integration Period Frame 2

Parallel Transfer

1010 Clocks

ODB

1046 Clocks

1010 Cycles

Readout Frame 2

Readout Frame 1

1046 Clocks

IAG

SAG

TRG

SRG

RST

Figure 1. Overview of Frame Timing with Variable Integration

Parallel Transfer 1010 Clocks

ODB

IAG

SAG

TRG

SRG

RST

Figure 2. Expanded Parallel Transfer Timing

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TC281

1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

1010 Cycles

Transfers One Line From SA to SR

~1µs

Clears SRG During Partial Line Readouts

Serial Line Readout

1046 Clocks

IAG

SAG

TRG

SRG

RST

Figure 3. Expanded Storage Area-to-Serial Register Transfer and Pixel Readout Timing

ODB

Storage Area Clear

9525 Clocks

IAG

SAG

TRG

SRG

RST

Figure 4. Special Modes of Operation: Storage Area Clear

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TC281 1036- × 1010-PIXEL CCD IMAGE SENSOR

SOCS058B – JUNE 1996 – REVISED MA Y 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

IAG

~1µs

Transfer The

First Line From

SA to AR

Transfer The Second Line

Adding to The First

Each Additional Pulse Bins One Additional Line

Serial Line Readout

SAG

TRG

SRG

RST

Figure 5. Special Modes of Operation: Binning

detailed description

The TC281 image sensor consists of five basic functional blocks: 1) the image-sensing area, 2) the advanced lateral overflow drain (ALOD), 3) the storage area, 4) the serial register, and 5) the bulk charge detection (BCD) node with the buffer output amplifier.

image-sensing area

The image-sensing area contains 1036 x 1010 pixel elements. A metal light shield covers 28 pixels on the left edge of the sensing area, 8 pixels on the right edge, and 10 rows at the bottom of the sensing area. The dark pixel signal can be used as a black reference during the video signal processing. The dark references will accumulate the dark current at the same rate as the active photosites, thus representing the true black level signal. As light enters the active photosites in the image area, electron hole pairs are generated and the electrons are collected in the potential wells of the pixels. The wells have a finite charge storage capacity determined by the pixel design. When the generated number of electrons in the illuminated pixels exceeds this limit, the electrons could spill over into neighboring pixels and cause blooming. To prevent this problem, each horizontal pair of pixels in the image sensing area shares a lateral overflow drain structure which provides up to a 1000-to-1 protection against such undesirable phenomenon.

advanced lateral overflow drain

The advanced lateral overflow drain structure is shared by two neighboring pixels and provides several unique features thus available in the sensor. By varying the dc bias of the drain pin, it is possible to control the blooming protection level and trade it for the well capacity.

Applying a 10-V pulse for a minimum duration of 1 us above the nominal dc bias level causes charge in the image area to be completely cleared. This feature permits a precise control of the integration time on a frame-by-frame basis. The single-pulse clear capability also reduces smear by eliminating accumulated charge from the pixels before the start of the integration (single sided smear).

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