Texas Instruments TC255PA, TC255P Datasheet

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

Copyright  1996, Texas Instruments Incorporated

2-1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• Medium-Resolution, Solid-State Image

Sensor for Low-Cost B/W TV Applications

• 324(H) x 243(V) Active Elements in Image

Sensing Area

• 10-µm Square Pixels

• Fast Clear Capability

• Electronic Shutter Function From

1/60–1/50000 s

• Low Dark Current

• Electron-Hole Recombination Antiblooming

• Dynamic Range...66 dB Typical

• High Sensitivity

• High Blue Response

• 8-Pin Dual-In-Line Plastic Package

• 4-mm Image-Area Diagonal

• Solid-State Reliability With No Image

Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics

• High Photoresponse Uniformity

description

The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special­purpose applications where low cost and small size are desired.

The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.

The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The
device can also be operated in an interlace mode, electronically displacing the image-sensing elements during
the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing
aliasing.

One important aspect of this image sensor is its high-speed image-transfer capability . This capability allows for
an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
loss of sensitivity and resolution inherent in those technologies.

The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance
charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is
buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.

The TC255P uses TI-proprietary virtual-phase technology , which provides devices with high blue response, low
dark signal, high photoresponse uniformity, and single-phase clocking. The TC255P is characterized for
operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication

Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies

available from Texas Instruments.

DUAL-IN-LINE PACKAGE

(TOP VIEW)

IAG2

ADB

SUB

OUT

ABG

IAG1

SAG

SRG

1

2

3

4

8

7

6

5

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

functional block diagram

Amplifier

OUT

ADB

IAG2

1

4

SAG

6

IAG1

ABG

7

8

Storage Area

Blooming Protection

Image Area With

Dark-Reference Elements

2

SUB

2 Dummy
Elements

3

Serial Register

SRG

5

Clear Line

Clearing Drain

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

sensor topology diagram

Effective-Imaging Area

324 Active Pixels

12

243 Lines

1 Dark Line

1 Clear Line

244 Lines

336 Pixels

212 1324Dummy Pixels

Optical

Black
(OPB)

Dummy Pixel

Buffer Column

Active Pixels

Storage Area

Terminal Functions

TERMINAL

NAME NO.

I/O

DESCRIPTION

ABG 8 I Antiblooming gate
ADB 2 I Supply voltage for amplifier-drain bias
SUB 3 Substrate
IAG1 7 I Image-area gate 1
IAG2 1 I Image-area gate 2
OUT 4 O Output
SAG 6 I Storage-area gate
SRG 5 I Serial-register gate

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

detailed description

The TC255P consists of five basic functional blocks: 1) the image-sensing area, 2) the image-clear line, 3) the
image-storage area, 4) the serial register, and 5) the charge-detection node and output amplifier.

image-sensing area

Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. To generate the dark
reference that is necessary in subsequent video-processing circuits for restoration of the video-black level, there
are 12 columns of elements on the left edge of the image-sensing area shielded from light. There is also one
column of elements on the right side of the image-sensing area and one line between the image-sensing area
and the image-clear line.

ABG

IAG

10 µm

Clocked Barrier

Virtual Barrier
Antiblooming Gate

Virtual Well

Clocked Well

Light

Antiblooming

Clocking Levels

Accumulated Charge

10 µm

Figure 1. Charge-Accumulation Process

SAG

Channel Stops

Virtual Phase

Clocked Phase

Figure 2. Charge-Transfer Process

image-clear line

During start-up or electronic-shutter operations, it is necessary to clear the image area of charge without
transferring it to the storage area. In such situations, the two image-area gates are clocked 244 times without
clocking the storage-area gate. The charge in the image area is then cleared through the image-clear line.

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

image-storage area

After exposure, the image-area charge packets are transferred through the image-clear line to the storage area.
The stored charge is then transferred line by line into the serial register for readout. Figure 3 illustrates the timing
to (1) transfer the image to the storage area and (2) to transfer each line from the storage area to the serial
register.

serial register

After each line is clocked into the serial register, it is read out pixel by pixel. Figure 3 illustrates the serial-register
clock sequence.

SAG

SRG

IAG1

IAG2

SAG

Expanded Section of Parallel Transfer

1) 2) 3)

1) End of serial readout of line

2) Transfer of new line to serial register

3) Beginning of readout of new line

244 Clocks

244 Cycles

Composite

Blank

ABG

IAG1

IAG2

SAG

SRG

339 Cycles

SRG

t = 80 ns

244 Clocks

Electronic

Shutter

Operation

Integration Time

Figure 3. Timing Diagram

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

charge-detection node and output amplifier

The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of the
charge-detection node and output amplifier. As charge is transferred into the detection node, the potential of
this node changes in proportion to the amount of signal received. This change is sensed by an MOS transistor
and, after proper buffering, the signal is supplied to the output terminal of the image sensor . After the potential
change is sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
is accomplished by a reset gate that is connected internally to the serial register. The detection node and buf fer
amplifier are located a short distance from the edge of the storage area; therefore, two dummy cells are used
to span this distance.

Reference
Generator

Q0

Q1

Q2

Q3

Q5

Q6

V

O

Q4

QR

SRG

Detection

Node

ADB

Figure 4. Buffer Amplifier and Charge-Detection Node

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

spurious-nonuniformity specification

The spurious-nonuniformity specification of the TC255P is based on several sensor characteristics:

• Amplitude of the nonuniform pixel

• Polarity of the nonuniform pixel

– Black
– White

• Column amplitude

The CCD sensor is characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 5. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 6.

The specification for the TC255P is as follows:

WHITE SPOT

(DARK)

WHITE SPOT

(ILLUMINATED)

COLUMN

(DARK)

COLUMN

(ILLUMINATED)

BLACK SPOT

(ILLUMINATED)

WHITE/BLACK

†

PAIR

x < 15 mV x < 15% x < 0.5 mV x < 1 mV x < 15% x < 9mV

†

A white/black pair nonuniformity will be no more than 2 pixels even for integration times of 1/60 second.

The conditions under which this specification is defined are as follows:

• The integration time is 1/60 second except for illuminated white spots, illuminated black spots and

white/black pair nonuniformities; in these three cases, the integration time is 1/240 second.

• The temperature is 45°C.

• The CCD video-output signal is 60 mV ± 10 mV.

mV

Amplitude

t

Illumination

% of Total

t

%

Figure 5. Pixel Nonuniformity, Figure 6. Pixel Nonuniformity,

Dark Condition Illuminated Condition

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage range, V

CC

: ADB (see Note 1) 0 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

: ABG, IAG1, IAG2, SAG, SRG –15 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

A

–10°C to 45°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

STG

–30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltages are with respect to the substrate terminal.

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage, V

CC

ADB 11 12 13 V

Substrate bias voltage 0 V

High level 1.5 2 2.5

IAG1, IAG2

Low level –10.5 –10 –9.5
High level 1.5 2 2.5

SAG

Low level –10.5 –10 –9.5

Input voltage, V

I

High level 1.5 2 2.5

V

SRG

Low level –10.5 –10 –9.5
High level 3.5 4 4.5

ABG

Intermediate level

‡

–2.5

Low level –8 –7 –6
ABG 6.25 12.5
IAG1, IAG2

25

Clock frequenc

y,

f

clock

SAG

12.5

MH

z

SRG

6.25 12.5
Load capacitive OUT 6 pF
Plastic package thermal conductivity 0.008 J/cm•s•°C
Operating free-air temperature, T

A

–10 45 °C

‡

Adjustment is required for optimum performance.

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended operating ranges of supply voltage and operating
free-air temperature (unless otherwise noted)

PARAMETER MIN TYP

†

MAX UNIT

Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 66 dB
Charge-conversion factor 11 12 13 µV/e
Charge-transfer efficiency (see Note 4) 0.9995 0.99999
Signal-response delay time, τ (see Note 5) 20 ns
Gamma (see Note 6) 0.97 0.98 0.99
Output resistance 350 Ω
Noise-equivalent signal without correlated double sampling 62 electrons
Noise-equivalent signal with correlated double sampling (see Note 7) 31 electrons

ADB (see Note 8) 13 15 18

Rejection ratio

SRG (see Note 9) 50

dB

ABG (see Note 10) 40

Supply current 5 10 mA

IAG1, IAG2 1000

p

p

SRG 22

p

Input capacitance, C

i

ABG 850

pF

SAG 2000

†

All typical values are at TA = 25°C.

NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by saturation-output signal.

3. For this test, the antiblooming gate must be biased at the intermediate level.

4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical-input signal.

5. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state.

6. Gamma (γ) is the value of the exponent is the equation below for two points on the linear portion of the transfer-function curve (this
value represents points near saturation).

ǒ

Exposure (2)
Exposure (1)

Ǔ

g

+

ǒ

Output signal (2)
Output signal (1)

Ǔ

7. A three-level serial-gate clock is necessary to implement correlated double sampling.

8. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB (see Figure 11
for measured ADB rejection ratio as a function of frequency).

9. SRG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG.

10. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-10

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

optical characteristics, TA = 40°C (unless otherwise noted)

PARAMETER MIN TYP MAX UNIT

No IR filter 350

Sensitivit

y

With IR filter 45

mV/l

x

Saturation signal, V

sat

(see Note 11) Antiblooming disabled, Interlace off 600 750 mV

Maximum usable signal, V

use

Antiblooming enabled 200 250 mV
Blooming-overload ratio (see Note 12) 100 200
Image-area well capacity 50000 62500 electrons
Smear (see Notes 13 and 14) 0.00012
Dark current Interlace disabled, TA = 21°C 0.20 nA/cm

2

Dark signal 200 µV
Pixel uniformity Output signal = 60 mV ± 10 mV 15 mV
Column uniformity Output signal = 60 mV ± 10 mV 0.5 mV
Shading 15 %
Electronic-shutter capability 1/15000 1/60 s

NOTES: 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.

12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming-overload ratio
is the ratio of blooming exposure to saturation exposure.

13. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical
height with recommended clock frequencies.

14. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10
of the height of the image section.

timing requirements

MIN NOM MAX UNIT

ABG 10 40
IAG1, IAG2 (fast clear) 10 10

t

r

Rise time

IAG1, IAG2 (image transfer)

10 20

ns
SAG 10 20
SRG 10 40
ABG 10 40
IAG1, IAG2 (fast clear) 10 10

t

f

Fall time

IAG1, IAG2 (image transfer)

10 20

ns
SAG 10 20
SRG 10 40

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

DR (dynamic range)+20 log

ǒ

V

sat

Ǔ

V

n

d

B

Vn = noise-floor voltage
V

sat (min)

= minimum saturation voltage

V

use (max)

= maximum usable voltage

V

use (typ)

= typical user voltage (camera white clip)

NOTES: A. V

use (typ)

is defined as the voltage determined to equal the camera white clip. This voltage must be less than V

use

(max)

.

B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering

the V

use(typ)

,

the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.

SNR (signal-to-noise-rate)+20 log

ǒ

V

use

Ǔ

V

n

d

B

(light input)

Lux

Enabled

With Antiblooming

Blooming Point

Well Capacity

Dependent on

Disabled

With Antiblooming

Blooming Point

Gate High Level

Upon Antiblooming

Level Dependent

SNR

V

n

V

sat (min)

V

use (typ)

V

use (max)

V

O

DR

Figure 7. Typical V

sat,

V

use

Relationship

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

2-12

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

– 8.5 V

1.5 V to 2.5 V

– 8.5 V to –10 V

0%

15 ns10 ns

t

CCD Delay

SRG

OUT

90%

100%

Sample

and

Hold

Figure 8. SRG and CCD Output Waveforms

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

300 400 500 600 700 800 900 1000

0.001

0.01

0.1

1

CCD SPECTRAL RESPONSIVITY

Responsivity – A/W

Incident Wavelength – nm

Figure 9

300 400 500 600 700 800 900 1000

0.001

0.01

0.1

1

CCD QUANTUM EFFICIENCY

Quantum Efficiency

Incident Wavelength – nm

Figure 10

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

0 5 10 25

0

ADB Rejection Ratio – dB

f – Frequency – MHz

2

4

6

8

10

12

14

16

18

20

15 20

Figure 11. Measured ADB Rejection Ratio as a Function of Frequency

0 5 10 25

0

Noise-Power Spectral Density –nV/rt Hz

f – Frequency – MHz

50

100

150

200

250

300

15 20

Figure 12. Noise-Power Spectral Density

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

IAG1
SAG
SRG

IAG2

ADB
SUB
OUT

TC255P

ABG

8
7
6
5

1
2
3
4

VIA, VM, V

S

12 V

DC VOLTAGES

TMC57750

4443424140393837363534

54

55

56

57

58

59

60

61

62

63

64

27

26

25

24

23

22

21

20

19

18

17

56789101112131415

28
29
30
31

45 46 47 48

4321

53
52
51
50

WSEL2

ED

DSSEL

PHSEL1

FI

TEST1

S/H

SHTCOM

EU
TEST4
CBLK

CSYNC
GND
CPOB1
CPOB2
SSEL1
V

CC
SSEL2
SSEL3
VR
HR

WSEL1

CC

MINSEL

EFSEL3

EFSEL2

EFSEL1

MON4

MON3

MON2

MON1

GND

TEST3

TEST2

FSSEL

ABGSEL

ABG
ABM

V

CC

IAG1
IAG2

SAG
GND
SRG
SRM

DLSEL

PHSEL2

CDS

GND

MCLK/4

MCLK/2

XSEL

XOUT

XIN

CLKIN

SCAN

PUCHDVD

32

V

ACT

16

49

SRGSEL

33

SHTMON

V

WINDOW

V

CC

WIN

V

CC

CPOB1

CSYNC

CBLK

EU

ED

V

CC

S/H

CDS

V

CC

OUT

5 V
GND

V

CC

25 MHz

V

CC

V

CC

GND
EN

V

AB

1
2
3
4
5
6
7
8

9
10
11
12

ABIN
ABMIN
IA1IN
IA2IN
SAIN
SRIN
SRMIN
GND

24
23
22
21
20
19
18
17

16
15
14
13

ABOUT

V

ABL

GND

V

ABM

IA1OUT

V

IA

IA2OUT

GND

SAOUT

V

S

SROUT

V

SM

V

AB

V

CC

TMC57253

V

ABM

ADB
SUB

V

IA

V

S

V

SM

Buffer

and

Preamp

SN761210

18171615141312

6

5

4

3

2

1

7
8
9

10

19 20 21 22

DELA YIN

AGCOUT

DATAIN
S/HFB
SHP
SHD1
SHD2
GND
AGCFIL
AGCLVL
AGCMAX

IRIS

WINDOW

HOBP

GND

AGCFB

AMPTUNE

GAINSEL

AMPOUT

YIN

11

AMPIN

CHD

28

29

30

31

32

33

27
26

25
24
23

APGAIN

V

CC

VIDEO

GND

CSYNC

CLAMP

CHARAIN

V

CC

YHIN

APOUT

APFIL

38394041424344

37 36 35 34

CBLK

V

CENTER

WIDTH

IRISFIL

LOB

HIB

VREF

SYNCLVL

SULVL

HICPLVL

CC

CBLK

V

CTRLVL

WIDLVL

ED

EU

SYNCLVL

SULVL

HICPLVL

CC

4.7 µF

0.1 µF

0.1 µF

S/H

CDS

4.7 µF

Low-Pass

FIlter

0.1 µF

WIN

CPOB1

0.1 µF

AMPTUNE

V

CC

75Ω

CSYNC
CPOB1

To Monitor

V

CC

0.1 µF

V

CC

5 V
ADB 22 V
SUB 10 V
V

ABM

7.5 V
HICPLVL 1.9 V
SULVL 1.2 V
SYNCLVL 1.2 V
CTRLVL 1.0 V
WIDLVL 4.0 V
AMPTUNE 1.0 V

100 µF

V

CC

V

AB

V

ABL

14 V

3 V

NOTES: A. Decoupling capacitors are not shown.

B. TI recommends designing AC coupled systems.

(see

NoteB)

V

ABL

Figure 13. Typical Application Circuit Diagram

TC255P
336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

SUPPORT CIRCUITS

DEVICE PACKAGE APPLICATION FUNCTION

TMC57750PM 64 pin flatpack Timing generator EIA-170 timing and CCD control signals
TMC57253DSB 24 pin small outline Driver Driver for ABG, IAG1, IAG2, SAG, and SRG

SN761210FR 44 pin flatpack Video processor

SYNC, BLANK, AGC, IRIS, CLAMP, S/H, CDS, and
WINDOW

Figure 13. Typical Application Circuit Diagram (Continued)

TC255P

336- × 244-PIXEL CCD IMAGE SENSOR

SOCS057 – JUNE 1996

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL DATA

The package for the TC255P consists of a plastic base, a glass window, and an 8-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings.

Î

Î

Î

Î

Package Center

10,05

9,95

9,00
8,90

10,05

9,95

9,00
8,90

5,19
4,93

4,20
3,93

0,64

1,273,50

2,54

0,46

0,30

0,50

0,80
0,70

2,67
2,53

0,27
0,23

10,16

Chip Surface

1,10
1,20

1,50
1,40

Optical
Center

6/96

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

TC255P (8 pin)

IMPORTANT NOTICE

T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICA TIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright  1998, Texas Instruments Incorporated