Texas Instruments LT1004IDR-2-5, LT1004IDR-1-2, LT1004ID-2-5, LT1004CLP-2-5, LT1004CLP-1-2 Datasheet

CHIP

0°C to 70°C

40°C to 85°C

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

D

Initial Accuracy
– ±4 mV for LT1004-1.2

D PACKAGE

(TOP VIEW)

– ±20 mV for LT1004-2.5

D

Micropower Operation

D

Operates up to 20 mA

D

Very Low Reference Impedance

D

Applications:
– Portable Meter Reference
– Portable Test Instruments
– Battery-Operated Systems
– Current-Loop Instrumentation

description

The LT1004 micropower voltage reference is a

NC

1

NC

2

NC

3

ANODE

NC – No internal connection
T erminals 6 and 8 are internally connected.

4

LP PACKAGE

(TOP VIEW)

CATHODE

8

NC

7

CATHODE

6
5

NC

ANODE
CATHODE

two-terminal band-gap reference diode designed
to provide high accuracy and excellent
temperature characteristics at very low operating
currents. Optimizing the key parameters in the
design, processing, and testing of the device
results in specifications previously attainable only
with selected units.

The LT1004 is a pin-for-pin replacement for the LM285 and LM385 series of references, with improved
specifications. It is an excellent device for use in systems in which accuracy was previously attained at the
expense of power consumption and trimming.

The L T1004C is characterized for operation from 0°C to 70°C. The L T1004I is characterized for operation from
–40°C to 85°C.

symbol

ANODE

(A)

AVAILABLE OPTIONS

PACKAGED DEVICES

V

T

A

°

°

–

For ordering purposes, the decimal point in the part number must be replaced with
a hyphen (e.g., show the -1.2 suffix as -1-2 and the -2.5 suffix as -2-5). The D
package is available taped and reeled. Add the R suffix to the device type (e.g.,
LT1004CDR-1-2). Chip forms are tested at 25°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Z

TYP

1.2 V LT1004CD-1.2 LT1004CLP-1.2 LT1004Y-1.2

2.5 V LT1004CD-2.5 LT1004CLP-2.5 LT1004Y-2.5

1.2 V LT1004ID-1.2 LT1004ILP-1.2 —

2.5 V LT1004ID-2.5 LT1004ILP-2.5 —

SMALL

OUTLINE

(D)

CATHODE
(K)

PLASTIC

(LP)

FORM

(Y)

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1999, Texas Instruments Incorporated

1

LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

schematic

LT1004-1.2

CATHODE

Q1

Q2

20 pF

500 kΩ

7.5 kΩ

Q3

Q5

500 Ω

7.5 kΩ

Q4

Q6

20 pF

600 kΩ

60 kΩ

Q11

Q10

Q7

LT1004-2.5

Q12

200 kΩ

50 kΩ

Q9

300 kΩ

Q8

Q13

ANODE

CATHODE

Q12

Q3

Q2

Q1

NOTE A: All component values shown are nominal.

20 pF

500 kΩ

Q5

500 Ω

Q4

Q6

60 kΩ

20 pF

600 kΩ

Q7

Q11

Q10

200 kΩ

500 kΩ

50 kΩ

Q9

300 kΩ

Q8

Q13

500 kΩ

ANODE

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Operating free-air temperature, T

°C

PARAMETER

T

‡

UNIT

a

t

fficient

25°C

ppm/°C

I

IZ(min) to 1 mA

∆V

curre

mV

with current

I

mA

Reference impedance

I

100 µA

Ω

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Reverse current, IR 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward current, IF 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Package thermal impedance, θJA (see Notes 1 and 2): D package 97°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

LP package 156°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Maximum power dissipation is a function of TJ(max),

ambient temperature is PD = (TJ(max) – TA)/

2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

θ

, and TA. The maximum allowable power dissipation at any allowable

θ

JA

JA

. Operating at the absolute maximum TJ of 150°C can impact reliability.

recommended operating conditions

MIN MAX UNIT

p

p

A

LT1004C 0 70
LT1004I –40 85

°

electrical characteristics at specified free-air temperature

TEST

CONDITIONS

V

Z

∆VZ/∆t

IZ(min)

z

z

V

n

‡

Full range is 0°C to 70°C for the LT1004C and –40°C to 85°C for the LT1004I.

§

The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.

Reference voltage IZ = 100 µA

Average

p

V

emperature coe

Z

of reference voltage

Change in
reference voltage

Z

with

Long-term change
in reference voltage

Minimum
reference current

Broadband
noise voltage

nt

p

IZ = 10 µA

§

IZ = 20 µA

=

Z

= 1 mA to 20

Z

IZ = 100 µA 25°C 20 20 ppm/khr

=

Z

IZ = 100 µA,
f = 10 Hz to 10 kHz

A

25°C 1.231 1.235 1.239 2.48 2.5 2.52

LT1004C 1.225 1.245 2.47 2.53

Full
range

LT1004I 1.225 1.245 2.47 2.53

°

25°C 1 1

Full range 1.5 1.5

25°C 10 10

Full range 20 20

Full range 8 10 12 20 µA

25°C 0.2 0.6 0.2 0.6

Full range 1.5 1.5

25°C 60 120 µV

LT1004-1.2 LT1004-2.5

MIN TYP MAX MIN TYP MAX

V

20

pp

20

†

°

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

3

LT1004-1.2, LT1004-2.5

PARAMETER

UNIT

a

g

ppm/°C

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

electrical characteristics, TA = 25°C

TEST

CONDITIONS

V

Z

V

∆VZ/∆t Long-term change in reference voltage IZ = 100 µA 20 20 ppm/khr
IZ(min) Minimum reference current 8 12 µA
z

z

V

n

†

The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.

Reference voltage IZ = 100 µA 1.231 1.235 1.239 2.48 2.5 2.52 V
Average temperature coefficient

Z

of reference voltage

Reference impedance IZ = 100 µA 0.2 0.6 0.2 0.6 Ω
Broadband noise voltage

†

IZ = 10 µA 20
IZ = 20 µA 20

IZ = 100 µA,
f = 10 Hz to 10 kHz

TYPICAL CHARACTERISTICS

LT1004Y-1.2 LT1004Y-2.5

MIN TYP MAX MIN TYP MAX

pp

60 120 µV

°

Table of Graphs

GRAPH TITLE FIGURE

LT1004x-1.2

Reverse current vs Reverse voltage 1
Reference-voltage change vs Reverse current 2
Forward voltage vs Forward current 3
Reference voltage vs Free-air temperature 4
Reference impedance vs Reference current 5
Noise voltage vs Frequency 6
Filtered output noise voltage vs Cutoff frequency 7

LT1004x-2.5

Transient response 8
Reverse current vs Reverse voltage 9
Forward voltage vs Forward current 10
Reference voltage vs Free-air temperature 11
Reference impedance vs Reference current 12
Noise voltage vs Frequency 13
Filtered output noise voltage vs Cutoff frequency 14
Transient response 15

4

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