TEXAS INSTRUMENTS CY74FCT16827T Technical data

1CY74FCT162827T

Data sheet acquired from Cypress Semiconductor Corporation.
Data sheet modified to remove devices not offered.

CY74FCT16827T

CY74FCT162827T

SCCS064 - August 1994 - Revised March 2000

Features

• FCT-E speed at 3.2 ns

• Power-off disable outputs permits live insertion

• Edge-rate control circuitry for significantly improved
noise characteristics

• Typical output skew < 250 ps

• ESD > 2000V

• TSSOP (19.6-mil pitch) and SSOP (25-mil pitch)
packages

• Industrial temperature range of −40˚C to +85˚C

•V

= 5V ± 10%

CC

CY74FCT16827T Features:

• 64 mA sink current, 32 mA source current

• Typical V
TA = 25˚C

(ground bounce) <1.0V at VCC = 5V,

OLP

CY74FCT162827T Features:

• Balanced 24 mA output drivers

• Reduced system switching noise

• Typical V

Functional Description

The CY74FCT16827T 20-bit buffer/line driver and the
CY74FCT162827T 20-bit buffer/line driver provide
high-performance bus interf ace b uff ering for wide data/address
pathsor busescarrying parity .Thesepartscanbeusedas a single
20-bit buffer or two 10-bit buff ers . Each 10-bit buffer has a pair of
NANDed
a power-off disable f eature to allo w for liv e insertion of boards.

The CY74FCT16827T is ideally suited for driving
high-capacitance loads and low-impedance backplanes.

The CY74FCT162827T has 24-mA balanced output drivers

20-Bit Buffers/Line Drivers

(ground bounce) <0.6V at VCC = 5V,

TA= 25˚C

OLP

OEforincreasedflexibility. The outputs are designed with

with current-limiting resistors in the outputs. This reduces the
need for external terminating resistors and provides for
minimal undershoot and reduced ground bounce. The
CY74FCT162827T is ideal for driving transmission lines.

Logic Block Diagrams Pin Configuration

1OE1
1OE2

1A1

2OE1
2OE2

2A1

TO 9 OTHER CHANNELS

TO 9 OTHER CHANNELS

1Y1

FCT16827-1

2Y1

FCT16827-2

1OE1

1Y1
1Y2

GND

1Y3
1Y4

V

1Y5
1Y6
1Y7

GND

1Y8
1Y9

1Y10

2Y1
2Y2
2Y3

GND

2Y4
2Y5
2Y6

V

2Y7
2Y8

GND

2Y9
2Y10

2OE1

CC

CC

SSOP/TSSOP

Top View

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28

56
55
54
53
52
51
50
49
48
47

46
45
44
43
42
41
40
39
38
37
36
35
34
33

32
31

30
29

1OE2
1A1
1A2

GND

1A3
1A4

V

CC
1A5
1A6
1A7

GND

1A8
1A9
1A10

2A1
2A2
2A3

GND

2A4
2A5
2A6

V

CC
2A7
2A8

GND

2A9
2A10
2OE2

FCT16827-3

Copyright © 2000, Texas Instruments Incorporated

CY74FCT16827T

CY74FCT162827T

Pin Description

Name Description

OE Output Enable Inputs (Active LOW)
A Data Inputs
Y Three-State Outputs

Maximum Ratings

(Above which the useful life may be impaired. For user
guidelines, not tested.)

Storage Temperature............................... −55°C to +125°C

Ambient Temperature with

Power Applied.......................................... −55°C to +125°C

[2, 3]

DC Input Voltage .................................................−0.5V to +7.0V

Function Table

OE

1

L L L L
L L H H

[1]

Inputs Outputs

OE

2

A Y

DC Output Voltage..............................................−0.5V to +7.0V

DC Output Current

(Maximum Sink Current/Pin)...........................−60 to +120 mA

Power Dissipation..........................................................1.0W

Static Discharge Voltage............................................>2001V

(per MIL-STD-883, Method 3015)

H X X Z
X H X Z

Operating Range

Ambient

Range

Temperature V

Industrial −40°C to +85°C 5V ± 10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions Min. Typ.

V
V
V
V
I

IH

I

IL

I

OZH

I

OZL

I

OS

I

O

I

OFF

IH
IL
H
IK

Input HIGH Voltage 2.0 V
Input LOW Voltage 0.8 V
Input Hysteresis

[5]

Input Clamp Diode Voltage VCC=Min., IIN=−18 mA −0.7 −1.2 V
Input HIGH Current VCC=Max., VI=V

CC

Input LOW Current VCC=Max., VI=GND ±1 µA
High Impedance Output

Current (Three-State Output pins)
High Impedance Output

Current (Three-State Output pins)
Short Circuit Current
Output Drive Current

[6]
[6]

Power-Off Disable VCC=0V, V

VCC=Max., V

VCC=Max., V

VCC=Max., V
VCC=Max., V

OUT

=2.7V ±1 µA

OUT

=0.5V ±1 µA

OUT

=GND −80 −140 −200 mA

OUT

=2.5V −50 −180 mA

OUT

[7]

≤4.5V

CC

[4]

Max. Unit

100 mV

±1 µA

±1 µA

Output Drive Characteristics for CY74FCT16827T

Parameter Description Test Conditions Min. Typ.

V

OH

Output HIGH Voltage VCC=Min., IOH=−3 mA 2.5 3.5 V

VCC=Min., IOH=−15 mA 2.4 3.5
VCC=Min., IOH=−32 mA 2.0 3.0

V

OL

1. H = HIGH Voltage Level. L = LOW Voltage Level. X = Don’t Care.Z = HIGH Impedance.

2. Operation beyond the limits set forth may impair the useful life of the device. Unless noted, these limits are over the operating free-air temperature range.

3. Unused inputs must always be connected to an appropriate logic voltage level, preferably either VCC or ground.

4. Typical values are at V

5. This parameter is specified but not tested.

6. Not more than one output should be shorted at a time. Duration ofshort should notexceedone second. The use of high-speed test apparatus and/or sample
and hold techniques are preferable in order to minimize internal chip heatingandmoreaccuratelyreflect operational values. Otherwise prolonged shorting of
a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parametric tests. In any sequence of parameter
tests, I

7. Tested at +25˚C.

Output LOW Voltage VCC=Min., IOL=64 mA 0.2 0.55 V

= 5.0V, TA= +25˚C ambient.

CC

tests should be performed last.

OS

2

[4]

Max. Unit

CY74FCT16827T

CY74FCT162827T

Output Drive Characteristics for CY74FCT162827T

Parameter Description Test Conditions Min. Typ.

I

ODL

I

ODH

V
V

OH
OL

Output LOW Current
Output HIGH Current
Output HIGH Voltage VCC=Min., IOH=−24 mA 2.4 3.3 V
Output LOW Voltage VCC=Min., IOL=24 mA 0.3 0.55 V

[6]

[6]

VCC=5V, VIN=VIH or VIL, V
VCC=5V, VIN=VIH or VIL, V

=1.5V 60 115 150 mA

OUT

=1.5V −60 −115 −150 mA

OUT

[4]

Max. Unit

Capacitance

[5]

(TA = +25˚C, f = 1.0 MHz)

Parameter Description Test Conditions Typ.

C
C

IN
OUT

Input Capacitance VIN = 0V 4.5 6.0 pF
Output Capacitance V

= 0V 5.5 8.0 pF

OUT

Power Supply Characteristics

Parameter Description Test Conditions Min. Typ.

I

CC

∆I

CC

I

CCD

I

C

Notes:

8. Per TTL driven input (V

9. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.

10. I

C

IC=ICC+∆ICCDHNT+I
I

CC

∆I
D
N
I

CCD

f

0

f

1

N
All currents are in milliamps and all frequencies are in megahertz.

11. Values for these conditions are examples of the I

Quiescent Power Supply

VCC=Max. VIN<0.2V,

Current
Quiescent Power Supply

VCC=Max. VIN=3.4V

Current (TTL inputs HIGH)
Dynamic Power Supply

Current

[9]

VCC=Max.,
One Input Toggling,
50% Duty Cycle,
Outputs Open,
OE1=OE2=GND,

Total Power Supply Current

[10]

VCC=Max.,
f

=10 MHz,

1

50% Duty Cycle,
Outputs Open,
One Bit Toggling,
OE1=OE2=GND

VCC=Max.,
f

=2.5 MHz,

1

50% Duty Cycle,
Outputs Open,
Twenty Bits Toggling,
OE1=OE2=GND

=3.4V); all other inputs at VCC or GND.

IN

=I

QUIESCENT

= Quiescent Current with CMOS input levels
= Power Supply Current for a TTL HIGH input (VIN=3.4V)

CC

= Duty Cycle for TTL inputs HIGH

H

= Number of TTL inputs at D

T

= Dynamic Current caused by an input transition pair (HLH or LHL)
= Clock frequency for registered devices, otherwise zero
= Input signal frequency
= Number of inputs changing at f

1

+ I

INPUTS

CCD(f0

+ I

DYNAMIC

/2 + f1N1)

H

1

formula. These limits are specified but not tested.

CC

V

IN>VCC

−0.2V

[8]

VIN=VCC or
V

=GND

IN

VIN=VCC or
V

=GND

IN

VIN=3.4V or
V

=GND

IN

VIN=VCC or
V

=GND

IN

VIN=3.4V or
V

=GND

IN

— 5 500 µA

— 0.5 1.5 mA

— 60 100 µA/MHz

— 0.6 1.5 mA

— 0.9 2.3

— 3.0 5.5

— 8.0 20.5

[4]

Max. Unit

[4]

Max. Unit

[11]

[11]

3