Telefunken TEMT4700 Datasheet
Silicon NPN Phototransistor
Description
TEMT4700 is a high speed silicon NPN epitaxial
planar phototransistor in a miniature PL–CC–2 package for surface mounting on printed boards. Due to its
waterclear epoxy the device is sensitive to visible and
near infrared radiation.
A base terminal is available to enable biasing and sensitivity control.
Features
D
PL–CC–2 SMD package
D
Extra wide viewing angle ϕ = ± 60
D
Package notch = collector
D
Base terminal connected
D
Fast response times
D
Suitable for visible and near infrared radiation
D
Matches with IR emitter TSMS3700
°
TEMT4700
Vishay Telefunken
94 8554
Applications
Miniature switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
tp/T x 0.1, tp x 10ms
T
x 55 °C
amb
t x 3 s
CEO
ECO
C
I
CM
P
tot
stg
T
sd
thJA
70 V
5 V
50 mA
100 mA
100 mW
j
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81556
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
TEMT4700
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Light Current Ee = 1 mW/cm2,
Angle of Half Sensitivity ϕ ±60 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Rise Time / Fall Time VS = 5 V, IC = 1 mA,
Cut–Off Frequency VS = 5 V, IC = 2 mA,
IC = 1 mA V
l
= 950 nm, VCE = 5 V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
l
= 950 nm, RL = 1 k
W
VS = 5 V, IC = 1 mA,
l
= 950 nm, R
R
= 100
L
= 100
L
W
W
(BR)CE
O
CEO
CEO
I
ca
l
p
l
0.5
V
CEsat
tr / t
tr / t
f
c
70 V
1 200 nA
3 pF
0.25 0.5 mA
830 nm
620...980 nm
0.15 0.3 V
f
f
6
2
180 kHz
m
s
m
s
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
VCE=20V
40 60 80
T
– Ambient Temperature ( °C )
amb
CEO
I – Collector Dark Current ( nA )
94 8304
2
10
1
10
0
10
20
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
100
www.vishay.de • FaxBack +1-408-970-5600
2 (5) Rev. 2, 20-May-99
Document Number 81556
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