Telefunken TEMT1000 Datasheet

Silicon NPN Phototransistor

Description

TEMT1000 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in SMT package
with dome lens. Due to its integrated Daylight filter the
device is sensitive for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of ± 15°.

Features

D

Fast response times

D

High photo sensitivity

D

Angle of half sensitivity ϕ = ± 15

D

Daylight filter matched for near IR radiation

D

SMD with terminals Z–bend

°

TEMT1000

Vishay Telefunken

15 970

Applications

Detector in electronic control and drive circuits
IR Detector for Daylight application

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current tp/T = 0.5, tp x 10 ms I
Total Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Soldering Temperature t x 3 s, 2 mm from case T

x 55 °C P

amb

CEO
ECO

C

CM

tot

j

stg

amb

sd

70 V

5 V

50 mA
100 mA
100 mW
100

–40...+85
–40...+85

260

°

C

°

C

°

C

°

C

Document Number 81554
Rev. 4, 17-Feb-00

www.vishay.de • FaxBack [phone]

1 (5)

TEMT1000

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS = 5 V, IC = 5 mA,

Turn–Off Time VS = 5 V, IC = 5 mA,

Cut–Off Frequency VS = 5 V, IC = 5 mA,

IC = 1 mA V

Ee = 1 mW/cm2,

l

= 950 nm, IC = 0.1 mA

RL = 100

RL = 100

RL = 100

W

W

W

(BR)CE

O

CEO

CEO

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

70 V

1 200 nA
3 pF

850 nm

750...980 nm

0.3 V

2.0

2.3

180 kHz

m

s

m

s

Type Dedicated Characteristics

T

= 25_C

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Collector Light Current Ee=1mW/cm2,

l

=950nm, VCE=5V

Typical Characteristics (T

4

10

3

10

VCE=20V

40 60 80

T

– Ambient Temperature ( °C )

amb

Ambient Temperature

CEO

I – Collector Dark Current ( nA )

94 8304

2

10

1

10

0

10

20

Figure 1. Collector Dark Current vs.

amb

TEMT1000 I

ca

2.0 7.0 mA

= 25_C unless otherwise specified)

2.0

1.8

100

1.6

1.4

1.2

1.0

ca rel

0.8

I – Relative Collector Current

0.6
0

94 8239

Figure 2. Relative Collector Current vs.

VCE=5V

E

=1mW/cm

e

l

=950nm

20 40 60 80

T

amb

Ambient Temperature

2

– Ambient Temperature ( °C )

100

www.vishay.de • FaxBack [phone]
2 (5) Rev. 4, 17-Feb-00

Document Number 81554