STMicroelectronics STC03DE170HV Technical data
1
STC03DE170HV
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
ESBT™ 1700 V - 3 A - 0.55 W
Table 1: General Features
V
CS(ON)
1 V 1.8 A 0.55 W
n LOW EQUIVALENT ON RESISTANCE
n VERY FAST-SWITCH, UP TO 150 kHz
n SQUARED RBSOA, UP TO 1700 V
n VERY LOW C
I
C
DRIVEN BY RG = 4.7 W
ISS
R
CS(ON)
APPLICATION
n AUX SMPS FOR THREE PHASE MAINS
DESCRIPTION
The STC03DE170HV is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STC03DE170HV is designed for use in aux
flyback smps for any three phase application.
Figure 1: Package
4
3
2
TO247-4L HV
Figure 2: Internal Schematic Diagram
Table 2: Order Code
Part Number Marking Package Packaging
STC03DE170HV C03DE170HV TO247-4L HV TUBE
Electrical Symbol Device Structure
Rev. 1
1/9January 2005
STC03DE170HV
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
I
I
CM
I
I
BM
P
T
stg
T
Table 4: Thermal Data
Symbol Parameter Unit
R
thj-case
Collector-Source Voltage (VBS = VGS = 0 V)
Base-Source Voltage (IC= 0, VGS = 0 V)
Source-Base Voltage (IC= 0, VGS = 0 V)
Gate-Source Voltage
GS
Collector Current
C
Collector Peak Current (tp < 5ms)
Base Current
B
Base Peak Current (tp < 1ms)
Total Dissipation at TC = 25 oC
tot
Storage Temperature
Max. Operating Junction Temperature
J
Thermal Resistance Junction-Case Max 1
1700 V
30 V
9V
± 20 V
3A
6A
2A
4A
100 W
-65 to 125 °C
125 °C
o
C/W
Table 5: Electrical Characteristics (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CS(SS)
I
BS(OS)
I
SB(OS)
I
GS(OS)
V
CS(ON)
V
BS(ON)
V
Q
Collector-Source Current
(V
= VGS = 0 V)
BS
Base-Source Current
(I
= 0 , VGS = 0 V)
C
Source-Base Current
= 0 , VGS = 0 V)
(I
C
V
V
V
= 1700 V 100 mA
CS(SS)
= 30 V 10 mA
BS(OS)
= 9 V 100 mA
SB(OS)
Gate-Source Leakage VGS = ± 20 V 500 nA
Collector-Source ON
Voltage
DC Current Gain IC = 1.8 A VCS = 1 V VGS = 10 V
h
FE
Base-Source ON Voltage VGS = 10 V IC = 1.8 A IB = 0.36 A
Gate Threshold Voltage VBS = VGS IB = 250 mA1.52.23V
GS(th)
Input Capacitance VCS = 25 V f = 1MHZ
C
iss
Gate-Source Charge VCS = 15 V VGS = 10 V
GS(tot)
INDUCTIVE LOAD
t
Storage Time
s
t
Fall Time
f
VGS = 10 V IC = 1.8 A IB = 0.36 A
V
= 10 V IC = 0.7 A IB = 70 mA
GS
I
= 0.7 A VCS = 1 V VGS = 10 V
C
V
= 10 V IC = 0.7 A IB = 70 mA
GS
V
= VCB = 0
GS
V
= 0 IC = 1.8 A
CB
VGS = 10 V
R
= 47 W V
G
t
= 4 ms IC = 1.8 A IB = 0.36 A
p
Clamp
= 1200 V
3.5
6
1
1.5
1
1.3
5
10
1
1.2
0.8
1
750 pF
12.5 nC
760
14
V
V
V
V
ns
ns
2/9
STC03DE170HV
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
V
CSW
V
CS(dyn)
V
CS(dyn)
INDUCTIVE LOAD
Storage Time
s
t
Fall Time
f
Maximum Collector-Source
Voltage Switched Without
Snubber
Collector-Source Dynamic
Voltage
(500 ns)
Collector-Source Dynamic
Voltage
(1ms)
VGS = 10 V
R
= 47 W V
G
t
= 4 ms IC = 0.7 A IB = 70 mA
p
Clamp
= 1200 V
690
32
RG = 47 W hFE = 5 A IC = 3 A 1500 V
VCC = V
R
= 47 W IC = 0.5 A
G
I
= 0.1 A I
B
t
= 500 ns
peak
VCC = V
R
= 47 W IC = 0.5 A
G
I
= 0.1 A I
B
t
= 500 ns
peak
= 400 V VGS = 10 V
Clamp
= 400 V VGS = 10 V
Clamp
Bpeak
Bpeak
= 1 A
= 1 A
3.9 V
2.2 V
ns
ns
3/9
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