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STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION
STC4516 is the complementary enhancement mode power field effect transistor using
high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
PIN CONFIGURATION
SOP-8
Top View
8 7 6 5
D1 D1 D2 D2
FEATURE
P Channel
z -30V/-7.2A, R
z -30V/-5.6A, R
= 22m-ohm (Typ.)
DS(ON)
GS =-10V
@V
= 40m-ohm
DS(ON)
GS =-4.5V
@V
N Channel
z 30V/8.5A, R
z 30V/7.8A, R
= 10m-ohm
DS(ON)
GS =10V
@V
= 16m-ohm
DS(ON)
GS =4.5V
@V
z Super high density cell design for extremely
DS(ON)
low R
z SOP-8 package design
STC5416
YA
1 2 3 4
S1 G1 S2 G2
Y: Year Code A: Process Code
N-Channel MOSFET P-Channel MOSFET
ORDERING INFORMATION
Part Number Package Part Marking
STC4516S8RG SOP-8 STC4516
STC4516S8TG SOP-8 STC4516
※ Process Code : A ~ Z ; a ~ z
※ STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※ STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
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STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
P-Channel
Parameter Symbol Typical Unit
Drain-Source Voltage V
-30 V
DSS
Gate-Source Voltage V
Continuous Drain Current
TA=25℃
=70℃
T
A
+/-20 V
GSS
I
D
-7.2
-5.6
A
Pulsed Drain Current IDM -20 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
=70℃
T
A
IS -2.3 A
P
2.8
D
W
1.8
Operation Junction Temperature TJ -55/150 ℃
Storage Temperature Range T
Thermal Resistance-Junction to Ambient R
-55/150 ℃
STG
80 /W℃
θJA
N-Channel
Parameter Symbol Typical Unit
Drain-Source Voltage V
Gate-Source Voltage V
30 V
DSS
+/-20 V
GSS
Continuous Drain Current TA=25℃
=70℃
T
A
I
D
8.5
7.5
A
Pulsed Drain Current IDM 20 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
=100℃
T
A
IS 2.3 A
P
2.5
D
W
1.6
Operation Junction Temperature TJ -55/150 ℃
Storage Temperature Range T
Thermal Resistance-Junction to Ambient R
-55/150 ℃
STG
80 /W℃
θJA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 3
STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃
P-Channel
Parameter Symbol Condition Min Typ Max Unit
Static
Drain-Source Breakdown
V
(BR)DSS
VGS=0V,ID=-250uA -30 V
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Current
On-State Drain Current I
Drain-source On-Resistance R
VDS=VGS,ID=-250uA -1.0 -3.0 V
GS(th)
VDS=0V,VGS=+20V +100 nA
GSS
I
DSS
VDS≥-5V,VGS=-10V -40 A
D(on)
DS(on)
VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain
=-30V,VGS=0V
V
DS
=55℃
T
J
VGS=-10V,ID=-7.2A
=-4.5V,ID=-5.6A
V
GS
0.022
0.030
-5
Ω
uA
Forward Transconductance gfs VDS=-10V,ID=-7.2A 24 S
Diode Forward Voltage VSD I
=-2.3A,VGS=0V -0.8 -1.2 V
S
Dynamic
Total Gate Charge Qg 16
=-15V,VGS=-10V
V
Gate-Source Charge Qgs 23
DS
Gate-Drain Charge Qgd
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-Off Time
1650
iss
V
350
oss
rss
T
d(on)
t
r
T
d(off)
DS
V
DD
=-1A,V
I
D
tf
-7.2A
I
D=
=-15V,VGS=0V
f=1MHz
=-15V,RL=15Ω
=-10V
GEN
RG=6Ω
4.5
235
16 30 Turn-On Time
17 30
65 110
35 80
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 4
STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃
N-Channel
Parameter Symbol
Static
Condition Min Typ Max Unit
Drain-Source Breakdown
V
(BR)DSS
VGS=0V,ID=250uA 30 V
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Transconductance gfs V
Diode Forward Voltage V
VDS=VGS,ID=250uA 1.0 3.0 V
GS(th)
V
GSS
I
DSS
VDS5V,V≧
D(on)
VGS=10V,ID=8.5A
DS(on)
SD
=0V,V
DS
+20V +100 nA
GS=
VDS=24V,VGS=0V 1
V
=24V,VGS=0V
DS
=55℃
T
J
=10V 25 A
GS
0.010
=4.5V,ID=7.8A
V
GS
=15V,ID=6.2A 13 S
DS
0.013
5
Ω
IS=-2.3A,VGS=0V 0.8 1.2 V
uA
Dynamic
Total Gate Charge Qg 16 24
V
Gate-Source Charge Qgs 4.2
DS
Gate-Drain Charge Qgd
=15V,VGS=10V
2A
I
D=
nC
2.5
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
1350
iss
258
oss
rss
T
d(on)
t
r
T
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
=15V,VGS=0V
V
DS
f=1MHz
=15V,RL=15Ω
V
DD
=5.0A,V
I
D
RG=1Ω
GEN
=10V
pF
150
15 20 Turn-On Time
6 16
20 40 Turn-Off Time
nS
12 20
STC4516 2008 V1
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STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 6
STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 7
STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (P MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 8
STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (P MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 9
STC4516
SOP-8 PACKAGE OUTLINE
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Page 10
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