Page 1
STC4567
N&P Pair Enhancement Mode MOSFET
10A / -10A
DESCRIPTION
The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION
SOP-8
PART MARKING
FEATURE
N-Channel
z 40V/6.0A, R
z 40V/5.0A, R
DS(ON) = 48mΩ (Typ.)
GS = 10V
@V
DS(ON) = 63mΩ
GS = 4.5V
@V
P-Channel
z -40V/-7.2A, R
z -40V/-5.0A, R
DS(ON) = 90mΩ(Typ.)
GS = -10V
@V
DS(ON)= 103mΩ
GS = - 4.5V
@V
z Super high density cell design for
extremely low R
z Exceptional on-resistance and maximum
DS(ON)
DC current capability
z SOP-8 package
Y∶Year A∶Product code
ORDERING INFORMATION
Part Number Package Part Marking
STC4567S8RG SOP-8 STC4567
※ Process Code : A ~ Z ; a ~ z
※ STC4567S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 2
STC4567
N&P Pair Enhancement Mode MOSFET
10A / -10A
ABSOULTE MAXIMUM RATINGS (Ta = 25
℃
Unless otherwise noted )
±
20
6.0
5.0
2.5
1.28
52.5
80
Typical
-7.2
-5.0
1.28
62.5
±
20
2.5
80
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
A=25℃
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM 20 -20 A
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range T
Thermal Resistance-Junction
to Ambient
T
T
=70℃
A
T
A=25℃
T
=70℃
A
T≦10Sec
Sready State
DSS
GSS
I
D
I
S
P
STG
RθJA
N P
40 -40 V
2.3 -2.3 A
D
-55/150
Unit
V
A
W
℃
℃
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 3
STC4567
N P
N P
P
nA
P
P
N P
N P
N P
N P
P
P
P
P
P
N P
N&P Pair Enhancement Mode MOSFET
10A / -10A
ELECTRICAL CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
Parameter Symbol
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Tran Conductance
V
(BR)DSS
GS(th)
GSS
I
DSS
TJ=55
D(on)
DS(on)
g
fs
Diode Forward Voltage VSD
Dynamic
Total Gate Charge Qg
Gate-Source Charge Qgs
Gate-Drain Charge Qgd
t
Turn-On Time
Turn-Off Time
d(on)
tr
t
d(off)
tf
Condition Min Typ Max Unit
VGS=0V,ID=10mA
VGS=0V,ID=-10mA
VDS=VGS,ID=250 uA
VDS=VGS,ID=-250uA
V
=0V,VGS=±20V
DS
V
=0V,VGS=±20V
DS
VDS=36V,VGS=0V
=-36V,VGS=0V
V
DS
℃
VDS=32V,VGS=0V
=-32V,VGS=0V
V
DS
≧
V
5V,VGS=10V
DS
≦
V
-5V,V
DS
=
V
10V, ID=6.0A
GS
V
=-10V,ID=-7.2A
GS
=
V
4.5V, ID=5.0A
GS
V
=-4.5V,ID=-5.0 A
GS
V
=15V,ID=6.9A
DS
=-15V,ID=-5.9A
V
DS
I
=1.0A,VGS=0V
S
=-1.7A,VGS=0V
I
S
N-Channel
=15V,VGS=10V
V
DS
≣
2.0A
I
D
P-Channel
=-15V,VGS=-10V
V
DS
≣
I
-3.5A
D
N-Channel
=15V,RL=15Ω
V
DS
I
=1A,R
D
V
GEN
GEN
=10V
P-Channel
=-15V,RL=15Ω
V
DS
I
=-1A,R
D
V
GEN
GEN
=10V
=-10V
GS
=6Ω
=-6Ω
40
-40
0.5
-0.8
N
N
N
V
1.0
-2.5
±
100
±
100
V
1
-1
5
uA
-5
10
-10
0.048
0.093
0.058
0.103
22
13
N
N
N
N
P
N
N
N
P
1.2
-1.0
16
9
24
12
3
1.5
2.3
2.0
4.6
8
6.0
20
3.1
10 4 20
15.6
30
3.0
25
21
34
4.0
20
A
Ω
S
V
nC
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 4
STC4567
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (N MOS)
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 5
STC4567
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (N MOS)
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 6
STC4567
N&P Pair Enhancement Mode MOSFET
YPICAL CHARACTERICTICS (P MOS)
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 7
STC4567
N&P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERICTICS (P MOS)
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 8
STC4567
N&P Pair Enhancement Mode MOSFET
SOP-8 PACKAGE OUTLINE
10A / -10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4567 2008. V1
Page 9
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