ST TMBAT49 User Manual
Features
■ very low turn-on voltage
■ fast switching
Description
The TMBAT49 is a general purpose metal to
silicon diode. This device has integrated
protection against excessive voltage such as
electrostatic discharges.
TMBAT49
Small signal Schottky diode
MELF
(glass)
November 2010 Doc ID 3484 Rev 2 1/6
www.st.com
6
Characteristics TMBAT49
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
T
Table 2. Thermal parameter
Repetitive peak reverse voltage 80 V
RRM
I
Forward continuous current Tj = 70 °C 500 mA
F
Repetitive peak forward current
tp = 1 s
δ ≤ 0.5
Surge non repetitive forward current tp = 10 ms 10 A
Storage temperature range - 65 to +150 °C
stg
T
Operating junction temperature range - 65 to +125 °C
j
Maximum lead soldering temperature during 15 s 260 °C
T
L
3A
Symbol Parameter Value Unit
R
Table 3. Static electrical characteristics
Junction to lead 110 °C/W
th(j-l)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp ≤ 300 µs, δ < 2%
Table 4. Dynamic characteristics (Tj = 25 °C)
Reverse leakage current Tj = 25 °C VR = 80 V - - 200 µA
R
= 10 mA - - 0.32
I
F
(1)
Forward voltage drop Tj = 25 °C
F
= 100 mA - - 0.42
F
= 1 A - - 1
I
F
VI
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
= 0 V - 120 -
C Diode capacitance F = 1 MHz
R
= 5 V - 35 -
V
R
2/6 Doc ID 3484 Rev 2
pF
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