selection between auto mode and forced PWM
mode, therefore benefiting from either lower
power consumption or best dynamic
performance. The bypass function allows battery
power saving. In this operating mode the highside switches are turned on so that the output
voltage is equal to the input voltage; in this
condition the current consumption is reduced to a
maximum of 5 µA. The device includes also softstart control, thermal shutdown, and current limit.
The STBB2 is packaged in Flip Chip 20 bumps
with 0.4 mm pitch.
The STBB2 is a fixed frequency, high efficiency,
buck-boost DC-DC converter able to provide
output voltages from 1.2 V to 4.5 V starting from
input voltage of 2.3 V to 5.5 V. The device can
operate with input voltages higher than, equal to,
or lower than the output voltage making the
product suitable for single Li-Ion, multi-cell
alkaline or NiMH applications where the output
voltage is within the battery voltage range. The
low-R
N-channel and P-channel MOSFET
DSon
switches are integrated and contribute to
achieving high efficiency. The MODE pin allows
Table 1.Device summary
Order codesMarkingsPackagingOutput voltages
STBB2JAD-RBB2Tape and reelAdjustable
STBB2J29-RB229Tape and reel2.9 V / 3.4 V
July 2012Doc ID 022745 Rev 41/24
This is information on a product in full production.
Figure 2.Application schematic for adjustable version
VBAT
C1
C2
VIN
VINA
VINA1
MODE
EN
BP
VSEL
Table 2.Typical external components
ComponentManufacturerPart numberValueSize
MurataGRM188R60J106M
C1
10 µF0603
TDK-EPCC1608X5R0J106M
C2MurataGRM188R61C105K1 µF0603
MurataGRM188R60J106M
C3, C4
10 µF0603
TDK-EPCC1608X5R0J106M
MurataLQH3NPN1R0NM0
(1)
L
CoilcraftLPS3015-102ML3.0 x 3.0 x 1.5 mm
1.0 µH
3 x 3 x 1.4 mm
TDK-EPCVLS252010ET1R0N2.5 x 2 x 1 mm
R1Depending on the output voltage, 0 Ω for fixed output version
R2
1. Inductor used for the maximum power capability. Optimized choice can be done according to the
application conditions (see
Depending on the output voltage, not used for fixed output
version
Section 8
).
Note:All the above components refer to a typical application. Operation of the device is not limited
to the choice of these external components.
Doc ID 022745 Rev 43/24
Block diagramSTBB2
2 Block diagram
Figure 3.Block diagram adjustable
SW1
SW2
VIN
VINA1
+
-
Σ
FB
-
EA
+
VREF and
Soft start
GND
Figure 4.Block diagram fixed
VIN
OSC
VSUM
Burst
Control 1
Level shift
Burst
Control 2
+
COMP 1
-
-
SW1
Driv er
LOGIC
CONTROL
+
COMP 2
VSUM
Gate
DMD
VSEL
VOUT
+
-
DMD
UVLO
SHUT
DOWN
OSC
DEVICE
CONTROL
BP
SW2
OTP
OSC
VINA
EN
MODE
BP
VSEL
AM10455v1
VOUT
VINA1
+
VREF and
Soft start
-
Σ
OSC
VSUM
-
EA
+
Burst
Contr ol 1
Level shift
Burst
Control 2
+
COMP 1
-
-
FB
VSEL
BP
GND
4/24Doc ID 022745 Rev 4
Gate
Driver
LOGIC
CONTROL
+
COMP 2
VSUM
DMD
VSEL
+
-
DMD
UVLO
SHUT
DOWN
OSC
DEVICE
CONTROL
BP
OTP
OSC
VINA
EN
MODE
BP
VSEL
AM10456v1
STBB2Absolute maximum ratings
3 Absolute maximum ratings
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
VIN, VINA, VINA1Supply voltage-0.3 to 7.0V
SW1,SW2Switching nodes-0.3 to 7.0V
VOUTOutput voltage-0.3 to 7.0V
MODE, EN, BP, VSELLogic pins-0.3 to 7.0V
FBFeedback pin-0.3 to 6.0V
ESD
T
AMB
T
T
STG
J
Human body model± 2000
V
Charged device model± 500
Operating ambient temperature-40 to 85°C
Maximum operating junction temperature150°C
Storage temperature-65 to 150°C
Note:Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Table 4.Thermal data
SymbolParameterValueUnit
R
thJA
1. PCB condition: JEDEC standard 2s2P(4-layer).
Thermal resistance junction-ambient80
(1)
°C/W
Doc ID 022745 Rev 45/24
Pin configurationSTBB2
4 Pin configuration
Figure 5.Pin connections (top view)
A4
[EN]
A3
[VINA]
A2
[VIN]
A1
[VIN]
B4
[BP]
B3
[VINA1]
B2
[SW1]
B1
[SW1]
C4
[MODE]
C3
[GND]
C2
[PGND]
C1
[PGND]
D4
[VSEL]
D3
[GND]
D2
[SW2]
D1
[SW2]
E4
[GND]
E3
[FB]
E2
[VO]
E1
[VO]
A1
A1
[VIN]
[VIN]
A2
A2
[VIN]
[VIN]
A3
A3
[VINA]
[VINA]
A4
A4
[EN]
[EN]
TOP VIEW
Table 5.Pin description
Pin namePin n°Description
VOUTE1, E2Output voltage
SW2D1, D2
Switch pin - internal switches C and D are connected to this pin. Connect inductor
between SW1 to SW2
PGNDC1, C2Power ground
SW1B1, B2
Switch Pin - internal switches A and B are connected to this pin. Connect inductor
between SW1 and SW2
B1
B1
[SW1]
[SW1]
B2
B2
[SW1]
[SW1]
B3
B3
[VINA1]
[VINA1]
B4
B4
[BP]
[BP]
[MODE]
[MODE]
BOTTOM VIEW
C1
C1
[PGND]
[PGND]
C2
C2
[PGND]
[PGND]
C3
C3
[GND]
[GND]
C4
C4
D1
D1
[SW2]
[SW2]
D2
D2
[SW2]
[SW2]
D3
D3
[GND]
[GND]
D4
D4
[VSEL]
[VSEL]
E1
E1
[VO]
[VO]
E2
E2
[VO]
[VO]
E3
E3
[FB]
[FB]
E4
E4
[GND]
[GND]
ENA4
Enable pin. Connect this pin to GND or a voltage lower than 0.4 V to shut down the IC. A
voltage higher than 1.2 V is required to enable the IC. Do not leave this pin floating.
When in normal operation, the MODE pin selects between auto mode and forced PWM
MODEC4
mode. If the MODE pin is low, the STBB2 automatically switches between pulse-skipping
and standard PWM according to the load level. If the MODE pin is pulled high, the STBB2
works always in PWM mode. Do not leave this pin floating.
VINAA3Supply voltage for control stage.
A 100 Ω resistor is internally connected between VIN and VINA1. Connecting a 1 µF
VINA1B3
capacitor between VINA1 and GND, an input filter is realized suitable to provide a clean
supply to VINA.
VINA1, A2
Power input voltage. Connect a ceramic bypass capacitor (10 µF min.) between this pin
and PGND
GNDC3, D3, E4 Signal ground
FBE3Feedback voltage. For the fixed version this pin must be connected to VOUT.
Bypass mode selection.
BPB4
When EN is high, connecting this pin to a voltage higher than 1.2 V, the device works in
bypass mode. A voltage lower than 0.4 V is required to disable bypass mode. In bypass
mode VIN is shorted to VOUT through the internal switches. Do not leave this pin floating.
VSELD4
Selection of output voltage for fixed versions (0 V
= 2.9 V / 1 V
OUT
This feature is not present in the adjustable version where the VSEL pin must be
OUT
= 3.4 V).
connected to VINA. Do not leave this pin floating.
6/24Doc ID 022745 Rev 4
STBB2Electrical characteristics
5 Electrical characteristics
- 40 °C < TA < 85 °C, VIN = 3.6 V; V
= 25 °C, unless otherwise specified.
T
A
Table 6.Electrical characteristics
= 3.4 V, VEN = VIN, VBP = 0 V; typical values are at
OUT
SymbolParameterTest conditionsMin.Typ.Max.Unit
General section
V
V
UVLO
f
I
OUT
I
I
PS-PWM
Operating power input voltage
IN
range
Shutdown modeV
Pulse-skippingI
Iq
PWM mode I
Bypass mode
Undervoltage lockout threshold
Switching frequency22.53MHz
SW
Continuous output current
Switch current limitation2.32.52.7A
PK
(1)
PS to PWM transitionV
= 0 V0.52µA
EN
= 0 A, V
OUT
= 0 A, V
OUT
V
= VIN; I
BP
V
= 0, V
MODE
rising; V
V
IN
I
= 100 mA
OUT
VIN falling; V
I
= 100 mA
OUT
2.5 V ≤ V
IN
IN
= 3.6 V100
= 03550µA
MODE
= V
MODE
OUT
IN
MODE
MODE
IN
= 0 A;
= 2.3 to 5.5 V
= V
IN;
= V
IN;
≤ 5.5 V800mA
2.35.5V
810mA
510µA
1.62.2
1.52
PWM to PS transition80
V
mA
Efficiency
η
(V
IN
ON
Tu r n- on t im e
T
Thermal shutdown150°C
T
SHDN
Hysteresis20°C
Output voltage
V
Output voltage range1.24.5V
OUT
Output voltage accuracy in PWM
mode
%V
OUT
Output voltage accuracy in power
save mode
= 3.6 V; V
(2)
OUT
= 3.4 V)
I
=1 0 mA (PS mode)85
OUT
I
= 50 mA (PS mode)90
OUT
= 150 mA (PWM)90
I
OUT
I
= 250 mA (PWM)91
OUT
I
= 500 mA (PWM)92
OUT
= 800 mA (PWM)92
I
OUT
VEN from low to high;
= 10 mA
I
OUT
V
= 2.5 to 5.5 V,
IN
= VIN V
V
MODE
V
= 2.5 to 5.5 V, V
IN
V
= GND/VIN suitable output
SEL
= GND/V
SEL
MODE
IN
= GND
-1.5+1.5%
260300µs
-3+3%
%
current to keep PS operation
Doc ID 022745 Rev 47/24
Electrical characteristicsSTBB2
Table 6.Electrical characteristics (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
%V
V
OPP-PS
I
LKFB
Feedback voltage accuracyAdj version493500507mV
FB
Maximum load regulationI
OUT
Peak-to-peak ripple in PS modeI
FB pin leakage current V
= from 10 mA to 800 mA±0.5%
LOAD
= 100 mA100mV
OUT
= 5.5 V9µA
FB
Logic inputs
V
V
I
LK-I
Low-level input voltage (EN,
IL
MODE, BP, VSEL pins)
High-level input voltage (EN,
IH
MODE, BP, VSEL pins)
Input leakage current (EN,
MODE, BP, VSEL pins)
V
EN=VMODE=VBP=VSEL
1.2V
= 5.5 V0.011µA
0.4V
Power switches
P-channel on-resistance130350mΩ
R
DSON
I
LKG-P
I
LKG-N
1. Not tested in production. This value is guaranteed by correlation with rds_on, peak current limit and operating input voltage.
2. Not tested in production.
N-channel on-resistance130350mΩ
P-channel leakage currentV
N-channel leakage currentV
= V
IN
SW1
OUT
= V
= 5.5 V; V
= 5.5 V; V
SW2
= 01µA
EN
= 01µA
EN
8/24Doc ID 022745 Rev 4
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