Sony MJL21195, MJL21195G, MJL21196, MJL21196G Service Manual

MJL21195, MJL21196

Preferred Device

Silicon Power Transistors

The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

• Total Harmonic Distortion Characterized

• High DC Current Gain − h

• Excellent Gain Linearity

• High SOA: 2.50 A, 80 V, 1 Second

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available*

= 25 Min @ IC = 8 Adc

FE

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16 A COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 V, 200 W

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector−Emitter Voltage − 1.5 V V

Collector Current − Continuous

Collector Current − Peak (Note 1)

Base Current − Continuous I

Total Power Dissipation @ TC = 25°C
Derate Above 25°C

Operating and Storage Junction
Temperature Range

TJ, T

CEO

CBO

EBO

CEX

I

C

B

P

D

stg

250 Vdc

400 Vdc

5 Vdc

400 Vdc

16
30

5 Adc

200

1.43

− 65 to
+150

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤10%.

R

q

JC

0.7 °C/W

MARKING
DIAGRAM

MJLxxxx

AYYWWG

TO−264

CASE 340G

STYLE 2

xxxx = 21195 or 21196
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 3

1 Publication Order Number:

Preferred devices are recommended choices for future use

and best overall value.

MJL21195/D

MJL21195, MJL21196

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)

Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)

OFF CHARACTERISTICS (Note 3)

Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)

Collector Cutoff Current
(VCE = 250 Vdc, V

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN (Note 3)

Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (Nonrepetitive)
(VCE = 80 Vdc, t = 1 s (Nonrepetitive)

ON CHARACTERISTICS (Note 3)

DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS (Note 3)

Total Harmonic Distortion at the Output
V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance
(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤10%.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%.

Symbol Min Typical Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

FE

V

BE(on)

V

CE(sat)

T

h

FE

HD

f

T

C

ob

250 − − Vdc

− − 100

− − 100

− − 100

mAdc

mAdc

mAdc

Adc

4.0

2.25

25

8.0

−

−

−

−

−

−

100

−

− − 2.2 Vdc

Vdc

−

−

−

−

1.4
4

%

−

−

0.8

0.08

−

−

4 − − MHz

− − 500 pF

, CURRENT BANDWIDTH PRODUCT (MHz)

T

F

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

PNP MJL21195 NPN MJL21196

VCE = 10 V

VCE = 5 V

TJ = 25°C
f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (A)

Figure 1. Typical Current Gain

Bandwidth Product

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

, CURRENT BANDWIDTH PRODUCT (MHz)

1.5

T

F

1.0

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2

VCE = 5 V

TJ = 25°C
f

= 1 MHz

test

1.0 100.1

IC, COLLECTOR CURRENT (A)

Figure 2. Typical Current Gain

Bandwidth Product

VCE = 10 V

1000

MJL21195, MJL21196

TYPICAL CHARACTERISTICS

PNP MJL21195 NPN MJL21196

1000

100

, DC CURRENT GAIN

FE

h

1000

100

, DC CURRENT GAIN

FE

h

10

VCE = 20 V

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (A)

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

TJ = 100°C

25°C

−25 °C

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

PNP MJL21195

TJ = 100°C

−25 °C

25°C

1000

100

, DC CURRENT GAIN

FE

h

NPN MJL21196

TJ = 100°C

25°C

−25 °C

100101.00.1

, COLLECTOR CURRENT (A)
I

VCE = 5 V

10

IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain, V

= 5 V Figure 6. DC Current Gain, VCE = 5 V

CE

100101.00.1

PNP MJL21195

30

25

20

15

10

C

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR−EMITTER VOLTAGE (V)

2.0 A

1.5 A

1.0 A

IB = 0.5 A

TJ = 25°C

, COLLECTOR CURRENT (A)
I

C

Figure 7. Typical Output Characteristics

VCE = 5 V

10

IC, COLLECTOR CURRENT (A)

NPN MJL21196

30

25

20

15

10

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 8. Typical Output Characteristics

100101.00.1

2.0 A

1.5 A

1.0 A

IB = 0.5 A

TJ = 25°C

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