Sony MJH6284, MJH6287 Service Manual

MJH6284(NPN),
MJH6287(PNP)

Preferred Device

Darlington Complementary
Silicon Power Transistors

These devices are designed for general-purpose amplifier and

low-speed switching motor control applications.

Features

•Similar to the Popular NPN 2N6284 and the PNP 2N6287

•Rugged RBSOA Characteristics

•Monolithic Construction with Built-in Collector-Emitter Diode

•Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector-Emitter Voltage V

Collector-Base Voltage V

Emitter-Base Voltage V

Collector Current - Continuous

- Peak

Base Current I

Total Device Dissipation @ TC = 25_C
Derate above 25_C

Operating and Storage Junction
Temperature Range

CEO

I

P

TJ, T

CB

EB

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

160

140

120

100

80

R

q

JC

100 Vdc

100 Vdc

5.0 Vdc

20
40

0.5 Adc

160

1.28

–65 to +150

0.78

Adc

W

W/_C

_C

_C/W

http://onsemi.com

DARLINGTON 20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS
100 VOLTS, 160 WATTS

MARKING
DIAGRAM

SOT-93

(TO-218)

CASE 340D

A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
MJH628x = Device Code

x = 4 or 7

ORDERING INFORMATION

Device Package Shipping

MJH6284 SOT-93 30 Units / Rail

MJH6284G SOT-93

(Pb-Free)

MJH6287 SOT-93 30 Units / Rail

MJH6287G SOT-93

(Pb-Free)

AYWWG

MJH628x

30 Units / Rail

30 Units / Rail

60

40

, POWER DISSIPATION (WATTS)

D

20

P

0

0

50 75 125 150 200100 17525

, CASE TEMPERATURE (°C)

T

C

Figure 1. Power Derating

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 6

1 Publication Order Number:

Preferred devices are recommended choices for future use

and best overall value.

MJH6284/D

MJH6284(NPN), MJH6287(PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) V

Collector Cutoff Current (VCE = 50 Vdc, IB = 0) I

Collector Cutoff Current

(V

= Rated VCB, V

CE

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150_C)

BE(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) I

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 10 Adc, VCE = 3.0 Vdc)

C

(IC = 20 Adc, VCE = 3.0 Vdc)

Collector-Emitter Saturation Voltage

(I

= 10 Adc, IB = 40 mAdc)

C

(IC = 20 Adc, IB = 200 mAdc)

Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) V

Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) V

DYNAMIC CHARACTERISTICS

Current-Gain Bandwidth Product (I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) f

C

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJH6284

CB

MJH6287

Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Resistive Load

Delay Time

Rise Time t

Storage Time t

VCC = 30 Vdc, IC = 10 Adc
I

= IB2 = 100 mA

B1

Duty Cycle = 1.0%

Fall Time t

1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Symbol Min Max Unit

CEO(sus)

CEO

I

CEX

EBO

h

FE

V

CE(sat)

BE(on)

BE(sat)

T

C

ob

fe

100 - Vdc

- 1.0 mAdc

mAdc

-

-

0.5

5.0

- 2.0 mAdc

­750
100

18,000

-

Vdc

-

-

2.0

3.0

- 2.8 Vdc

- 4.0 Vdc

4.0 - MHz

pF

-

-

400
600

300 - -

Typical

Symbol

t

d

r

s

f

NPN PNP

0.1 0.1 ms

0.3 0.3

1.0 1.0

3.5 2.0

Unit

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

, MUST BE FAST RECOVERY TYPES, e.g.:

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

t

, tf, ≤ 10 ns

r

DUTY CYCLE = 1.0%

For NPN test circuit reverse diode and voltage polarities.

≈ 100 mA

B

≈ 100 mA

B

25 ms

51 D

R

B

≈ 8.0 k ≈ 50

1

+4.0 V

for td and tr, D1 is disconnected
and V2 = 0

Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic

V

CC

-30 V

R

C

TUT

SCOPE

http://onsemi.com

NPN

MJH6284

COLLECTOR COLLECTOR

BASE BASE

EMITTER EMITTER

2

PNP

MJH6287