Sony MJH11017, MJH11019, MJH11021, MJH11018, MJH11020 Service Manual

MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)

Preferred Device

Complementary Darlington
Silicon Power Transistors

These devices are designed for use as general purpose amplifiers,

low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — h

• Collector−Emitter Sustaining Voltage

V

CEO(sus)

= 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

V

= 1.2 V (Typ) @ IC = 5.0 A

CE(sat)

= 1.8 V (Typ) @ I

• Monolithic Construction

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Total Device Dissipation @ TC = 25_C
Derate above 25_C

Operating and Storage Junction Temperature
Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

− Peak (Note 1)

Characteristic

= 400 Min (All Types)

FE

= 10 A

C

Symbol

V

CEO

V

CB

V

EB

I

C

I

B

P

TJ, T

Symbol

R

q

D

JC

stg

Max

–65 to

+150

Max

0.83

150
200
250

150
200
250

5.0

15
30

0.5

150

1.2

Unit

Vdc

Vdc

Vdc

Adc

Adc

W

W/_C

_C

Unit

_C/W

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15 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150−250 VOLTS, 150 WATTS

NPN PNP

BASE

1

COLLECTOR 2

EMITTER 3

MJH11019
MJH11021

MARKING
DIAGRAM

AYWWG

MJH110xx

COLLECTOR 2

BASE

1

EMITTER 3

MJH11018 MJH11017
MJH11020
MJH11022

SOT−93

(TO−218)

1

2

3

A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
MJH110xx = Device Code

CASE 340D

STYLE 1

xx = 17, 19, 21, 18, 20, 22

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 7

1 Publication Order Number:

MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

160

140

120

100

80

60

40

, POWER DISSIPATION (WATTS)

D

20

P

0

0

40 60 100 120 16080 14020

, CASE TEMPERATURE (°C)

T

C

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I

= 0.1 Adc, IB = 0) MJH11017, MJH11018

C

MJH11019, MJH11020
MJH11021, MJH11022

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022

Collector Cutoff Current

(V

= Rated VCB, V

CE

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TJ = 150_C)

BE(off)

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

= 10 Adc, VCE = 5.0 Vdc)

C

(IC = 15 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(I

= 10 Adc, IB = 100 mA)

C

= 15 Adc, IB = 150 mA)

(I

C

Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

Output Capacitance MJH11018, MJH11020, MJH11022

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021

CB

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Characteristic

Delay Time

Rise Time

Storage Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

V

= 5.0 V) (See Figure 2)

BE(off)

Fall Time

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

Symbol

V

CEO(sus)

I

CEO

I

CEV

I

EBO

h

FE

V

CE(sat)

V

BE(on)

V

BE(sat)

f

T

C

ob

h

fe

Symbol

t

d

t

r

t

s

t

f

Min

150
200
250

−

−

−

−

−

−

400
100

−

−

−

−

3.0

−

−

75

NPN

150

1.2

4.4

2.5

Typical

Max

−

−

−

1.0

1.0

1.0

0.5

5.0

2.0

15,000

−

2.5

4.0

2.8

3.8

−

400
600

−

PNP

75

0.5

2.7

2.5

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

Vdc

−

pF

−

Unit

ns

ms

ms

ms

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2

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

V

CC

100 V

R

C

TUT

RB & RC varied to obtain desired current levels
D

, must be fast recovery types, e.g.:

1

1N5825 used above I
MSD6100 used below I

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

0.03

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.02

0.01 0.03 3.0 30 3000.3

≈ 100 mA

B

≈ 100 mA

B

0.01

0.05 1.0 2.0 5.0 10 20 50 100 200 500

0.1 0.50.2

, tf ≤ 10 ns

t

r

Duty Cycle = 1.0%

Figure 2. Switching Times Test Circuit

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

For NPN test circuit, reverse diode and voltage polarities.

R

q

JC

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

25 ms

(t) = r(t) R

q

(pk)

JC

1

R

q

= 0.83°C/W MAX

- TC = P

51

(t)

JC

R

B

D

1

+4.0 V

For t

and tr, D1 is disconnected

d

and V2 = 0

P

(pk)

DUTY CYCLE, D = t1/t

t

1

t

2

SCOPE

2

1000

30
20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPS)

C

I

0.2

0

= 25°C SINGLE PULSE

T

C

0.5 ms

1.0 ms

5.0 ms

WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022

2.0

5.0 50 25015030

3.0 10

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

dc

20 100

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

Figure 3. Thermal Response

FORWARD BIAS

0.1 ms

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 4 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

= 150_C; TC is

J(pk)

may be calculated from the data in

J(pk)

C

− V

CE

J(pk)

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