Sony MJE270, MJE270G, MJE271, MJE271G Service Manual

MJE270 (NPN),
MJE271 (PNP)

Complementary Silicon
Power Transistors

Features

• High Safe Operating Area

@ 40 V, 1.0 s = 0.375 A

I

S/B

• Collector−Emitter Sustaining Voltage

V

CEO(sus)

= 100 Vdc (Min)

• High DC Current Gain

@ 120 mA, 10 V = 1500 (Min)

h

FE

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

− Peak

Base Current

Total Power Dissipation @ TC = 25_C

Derate above 25_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.

Symbol

V

CEO

V

CB

V

EB

I

C

I

B

P

D

P

D

TJ, T

stg

Symbol

R

q

JC

R

q

JA

Value

100

100

5.0

2.0

4.0

0.1

15

0.12

1.5

0.012

−65 to +150

Max

8.33

83.3

Unit

Vdc

Vdc

Vdc

Adc

Adc

W

W/_C

W

W/_C

_C

Unit

_C/W

_C/W

http://onsemi.com

2.0 AMPERE

COMPLEMENTARY

POWER DARLINGTON

TRANSISTORS

100 VOLTS, 15 WATTS

NPN PNP

COLLECTOR 2

BASE

1

EMITTER 3

MJE270 MJE271

3

2

1

MARKING DIAGRAM

1 BASE

2 COLLECTOR

3 EMITTER

Y = Year
WW = Work Week
JE27x = Specific Device Code

G=Pb−Free Package

BASE

1

x= 0 or 1

COLLECTOR 2

EMITTER 3

TO−225
CASE 77
STYLE 3

YWW
JE27xG

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 7

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

MJE270 TO−225

MJE270G TO−225

(Pb−Free)

MJE271 TO−225 500 Units/Box

MJE271G TO−225

(Pb−Free)

500 Units/Box

500 Units/Box

500 Units/Box

MJE270/D

MJE270 (NPN), MJE271 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(I

= 10 mAdc, IB = 0)

C

Collector Cutoff Current

(V

= 100 Vdc, IB = 0)

CE

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

Emitter Cutoff Current

(V

= 5.0 Vdc, IC = 0)

BE

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 40 Vdc, t = 1.0 s, Non−repetitive)

CE

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 20 mAdc, VCE = 3.0 Vdc)

C

(IC = 120 mAdc, VCE = 10 Vdc)

Collector−Emitter Saturation Voltage

(I

= 20 mAdc, IB = 0.2 mAdc)

C

(IC = 120 mAdc, IB = 1.2 mAdc)

Base−Emitter On Voltage

(I

= 120 mAdc, VCE = 10 Vdc)

C

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 0.05 Adc, VCE = 5.0 Vdc, f

= 1.0 MHz)

test

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. f

= ⎪hfe⎪• f

T

test

.

Symbol

V

CEO(sus)

I

CEO

I

CBO

I

EBO

I

S/b

h

FE

V

CE(sat)

V

BE(on)

f

T

Min

100

−

−

−

375

500

1500

−

−

−

6.0

Max

−

1.0

0.3

0.1

−

−

−

2.0

3.0

2.0

−

Unit

Vdc

mAdc

mAdc

mAdc

Adc

−

Vdc

Vdc

MHz

10,000

, DC CURRENT GAIN

FE

h

7000
5000

3000

1000

700
500

300

100

150°C

25°C

-55°C

0.05 0.3 1.0 1.5

0.03 0.070.015 0.5

0.1 0.7

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

VCE = 3.0 V

, COLLECTOR CURRENT (AMPS)

C

I

http://onsemi.com

2

5.0

1.0

0.5

0.1

0.05

0.01

10

dc

MJE270/MJE271

BONDING WIRE LIMIT
THERMAL LIMIT @ T

= 25°C

C

(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

1.0

3.0 30 70

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

7.0 10

100

Figure 2. Safe Operating Area