Sony MJ11028, MJ11030, MJ11032, MJ11029, MJ11033 Service Manual
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
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High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain − h
= 1000 (Min) @ IC = 25 Adc
FE
= 400 (Min) @ IC = 50 Adc
h
FE
• Curves to 100 A (Pulsed)
• Diode Protection to Rated I
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to + 200_C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
Rating
Collector−Emitter Voltage MJ11028/29
Collector−Base Voltage MJ11028/29
Emitter−Base Voltage V
Collector Current − Continuous
− Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Derate Above 25°C @ T
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Lead Temperature for
Soldering Purposes for v 10 seconds
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
= 25°C unless otherwise noted)
J
Symbol Value Unit
V
CEO
V
CBO
EBO
I
P
TJ, T
T
R
q
C
B
D
stg
L
JC
= 100_C
C
MJ11030
MJ11032/33
MJ11030
MJ11032/33
60
90
120
60
90
120
5.0 Vdc
50
100
2.0 Adc
300
1.71
− 55 to +200
275
0.58 °C/W
Vdc
Vdc
Adc
W
W/°C
°C
_C
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 − 120 VOLTS
300 WATTS
NPN PNP
COLLECTOR
CASE
BASE
1
EMITTER 2
MJ11028 MJ11029
MJ11030
MJ11032
1
2
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ110xx = Device Code
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
xx = 28, 29, 30, 32, 33
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
COLLECTOR
CASE
BASE
1
EMITTER 2
MJ11033
MARKING
DIAGRAM
MJ110xxG
AYYWW
MEX
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 6
1 Publication Order Number:
MJ11028/D
MJ11028, MJ11030, MJ11032 (NPN)
PNP
MJ11029
MJ11033
COLLECTOR
NPN
MJ11028
MJ11030
MJ11032
BASE
≈ 3.0 k ≈ 25
BASE
≈ 3.0 k ≈ 25
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) MJ11028, MJ11029
(I
= 1 00 mAdc, IB = 0) MJ11030
C
Collector−Emitter Leakage Current
Emitter Cutoff Current
Collector−Emitter Leakage Current
ON CHARACTERISTICS (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
= 60 Vdc, RBE = 1 kW) MJ11028, MJ11029
(V
CE
= 90 Vdc, RBE = 1 kW) MJ11030
(V
CE
= 120 Vdc, RBE = 1 kW) MJ11032, MJ11033
(V
CE
= 60 Vdc, RBE = 1 kW, TC = 150_C) MJ11028, MJ11029
(V
CE
= 120 Vdc, RBE = 1 kW, TC = 150_C) MJ11032, MJ11033
(V
CE
(V
= 5 Vdc, IC = 0)
BE
(V
= 50 Vdc, IB = 0)
CE
(I
= 25 Adc, VCE = 5 Vdc)
C
= 50 Adc, VCE = 5 Vdc)
(I
C
(I
= 25 Adc, IB = 250 mAdc)
C
= 50 Adc, IB = 500 mAdc)
(I
C
(I
= 25 Adc, IB = 200 mAdc)
C
= 50 Adc, IB = 300 mAdc)
(I
C
= 25_C unless otherwise noted)
C
Characteristic
MJ11032, MJ11033
COLLECTOR
EMITTER
Symbol Min Max Unit
V
(BR)CEO
I
CER
I
EBO
I
CEO
h
V
CE(sat)
V
BE(sat)
FE
60
90
120
−
−
−
−
−
− 5
− 2
1 k
400
−
−
−
−
−
−
−
2
2
2
10
10
18 k
−
2.5
3.5
3.0
4.5
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
−
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