Sony MJ11021, MJ11022 Service Manual

MJ11021(PNP)
MJ11022 (NPN)

Complementary Darlington
Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed
for use as general purpose amplifiers, low frequency switching and
motor control applications.

Features

• High dc Current Gain @ 10 Adc − h

• Collector−Emitter Sustaining Voltage

V

CEO(sus)

= 250 Vdc (Min) − MJ11022, 21

• Low Collector−Emitter Saturation

V

CE(sat)

• 100% SOA Tested @ V

= 1.0 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ I

= 44 V

CE

= 4.0 A

I

C

t = 250 ms

• Pb−Free Packages are Available*

= 400 Min (All Types)

FE

= 10 A

C

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15 AMPERE

COMPLEMENTARY

DARLINGTON POWER

TRANSISTORS

250 VOLTS, 175 WATTS

NPN PNP

COLLECTOR
CASE

BASE

1

BASE

1

COLLECTOR
CASE

MAXIMUM RATINGS (T

Rating

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Power Dissipation @ TC = 25°C

Derate Above 25°C

Operating and Storage Junction

Temperature Range

= 25°C unless otherwise noted)

J

− Peak (Note 1)

Symbol Value Unit

CEO

CBO

EBO

I

P

TJ, T

C

B

D

stg

250 Vdc

250 Vdc

50 Vdc

15
30

0.5 Adc

175

1.16

– 65 to +175

−   65 to +200

Adc

W

W/°C

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

R

q

JC

0.86 °C/W

EMITTER 2

MJ11022 MJ11021

EMITTER 2

MARKING
DIAGRAM

1

2

TO−204 (TO−3)

CASE 1−07

STYLE 1

MJ1102x = Device Code

x = 1 or 2
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin

MJ1102xG

AYYWW

MEX

ORDERING INFORMATION

Device Package Shipping

MJ11021 TO−3 100 Units/Tray

MJ11021G TO−3

MJ11022 TO−3 100 Units/Tray

MJ11022G

(Pb−Free)

TO−3

(Pb−Free)

100 Units/Tray

100 Units/Tray

© Semiconductor Components Industries, LLC, 2008

September, 2008 − Rev. 3

1 Publication Order Number:

MJ11021/D

200

150

100

, POWER DISSIPATION (WATTS)

50

D

P

0

0 150 17525

MJ11021(PNP) MJ11022 (NPN)

50 75 100 125 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

MUST BE FAST RECOVERY TYPE, e.g.:

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

≈ 100 mA

B

≈ 100 mA

B

51

R

B

D

1

≈ 10 K ≈ 8.0

+4.0 V

for t

and tr, D1 is disconnected

d

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.

Figure 2. Switching Times Test Circuit

TUT

V

100 V

R

C

CC

SCOPE

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)
(I

= 0.1 Adc, IB = 0) MJ11021, MJ11022

C

Collector Cutoff Current
(V

= 125, IB = 0) MJ11021, MJ11022

CE

Collector Cutoff Current
(V

= Rated VCB, V

CE

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TJ = 150_C)

BE(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) I

ON CHARACTERISTICS (Note 1)

DC Current Gain
(I

= 10 Adc, VCE = 5.0 Vdc)

C

(IC = 15 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)

Base−Emitter On Voltage
I

= 10 A, VCE = 5.0 Vdc)

C

Base−Emitter Saturation Voltage
(I

= 15 Adc, IB = 150 mA)

C

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product
(I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

C

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJ11022
MJ11021

Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Characteristic Symbol NPN PNP Unit

Delay Time

Rise Time t

Storage Time t

(VCC = 100 V, IC = 10 A, IB = 100 mA

V

= 50 V) (See Figure 2)

BE(off)

Fall Time t

1. Pulsed Test: Pulse Width = 300 ms, Duty Cycle v 2%.

V

CEO(sus)

I

CEO

I

CEV

EBO

h

FE

V

CE(sat)

V

BE(on)

V

BE(sat)

250 −

− 1.0

−

−

0.5

5.0

− 2.0 mAdc

400
100

15,000

−

−

−

2.0

3.4

− 2.8 Vdc

− 3.8 Vdc

[hfe] 3.0 − Mhz

C

ob

h

fe

−

−

400
600

75 − −

Typical

t

d

r

s

f

150 75 ns

1.2 0.5

4.4 2.7

10.0 2.5

Vdc

mAdc

mAdc

−

Vdc

pF

ms

ms

ms

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