Sony MJ11012, MJ11015, MJ11016 Service Manual

MJ11015 (PNP); MJ11012, MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose
amplifier applications.
High DC Current Gain
h
= 1000 (Min) @ IC 20 Adc
FE
Monolithic Construction with Builtin Base Emitter Shunt
Resistor
Junction Temperature to + 200_C
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage V
Collector Current I
Base Current I
Total Device Dissipation @ TC = 25°C Derate above 25°C @ T
Operating Storage Junction Temperature Range
MJ11012 MJ11015/6
MJ11012 MJ11015/6
= 100°C
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Sol­dering Purposes for 10 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
V
CEO
V
P
TJ, T
R
T
CB
EB
C
B
D
55 to + 200 °C
stg
q
JC
L
60
120
60
120
5 Vdc
30 Adc
1 Adc
200
1.15
0.87 °C/W
275 °C
Vdc
Vdc
W
W/°C
http://onsemi.com
30 AMPERE DARLINGTON
POWER TRANSISTORS COMPLEMENTARY SILICON 60 120 VOLTS, 200 WATTS
NPN PNP
COLLECTOR CASE
BASE
1
EMITTER 2
MJ11016 MJ11015 MJ11012
1
2
TO204AA (TO−3)
CASE 107
STYLE 1
MJ1101x = Device Code
G= Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin
x = 2, 5 or 6
ORDERING INFORMATION
Device Package Shipping
MJ11012 TO3 100 Units/Tray
MJ11012G TO3
MJ11015 TO3 100 Units/Tray
MJ11015G TO3
MJ11016 TO3 100 Units/Tray
MJ11016G TO3
Preferred devices are recommended choices for future use and best overall value.
(PbFree)
(PbFree)
(PbFree)
COLLECTOR CASE
BASE
1
EMITTER 2
MARKING DIAGRAM
MJ1101xG
AYYWW
MEX
100 Units/Tray
100 Units/Tray
100 Units/Tray
© Semiconductor Components Industries, LLC, 2008
September, 2008 Rev. 5
1 Publication Order Number:
MJ11012/D
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
PNP
COLLECTOR
MJ11015
BASE
8.0 k 40
EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T
Characteristics
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(I
= 100 mAdc, IB = 0) MJ11012
C
CollectorEmitter Leakage Current
(V
= 60 Vdc, RBE = 1k ohm) MJ11012
CE
= 120 Vdc, RBE = 1k ohm) MJ11015, MJ11016
(V
CE
(V
= 60 Vdc, RBE = 1k ohm, TC = 150_C) MJ11012
CE
(V
= 120 Vdc, RBE = 1k ohm, TC = 150_C) MJ11015, MJ11016
CE
Emitter Cutoff Current
(V
= 5 Vdc, IC = 0)
BE
CollectorEmitter Leakage Current
(V
= 50 Vdc, IB = 0)
CE
ON CHARACTERISTICS(1)
DC Current Gain
(I
= 20 Adc,VCE = 5 Vdc)
C
= 30 Adc, VCE = 5 Vdc)
(I
C
CollectorEmitter Saturation Voltage
(I
= 20 Adc, IB = 200 mAdc)
C
= 30 Adc, IB = 300 mAdc)
(I
C
BaseEmitter Saturation Voltage
(I
= 20 A, IB = 200 mAdc)
C
= 30 A, IB = 300 mAdc)
(I
C
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
= 10 A, VCE = 3 Vdc, f = 1 MHz)
C
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
= 25_C unless otherwise noted.)
C
NPN MJ11012 MJ11016
BASE
8.0 k 40
MJ11015, MJ11016
COLLECTOR
EMITTER
Symbol
V
(BR)CEO
I
CER
I
EBO
I
CEO
h
FE
V
CE(sat)
V
BE(sat)
h
fe
Min
60
120
1000
200
4
Max
1 1 5 5
5
1
3 4
3.5 5
Unit
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
MHz
http://onsemi.com
2
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