Sony DM-232 Datasheet
Magnetoresistance Element
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Description
DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
• Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
• Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
DM-232
M-118 (Plastic)
Applications
• Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage VCC 10 V
• Storage temperature Tstg –30 to +100 °C
Recommended Operating Conditions
• Supply voltage VCC 5V
•Operating temperature Topr –20 to + 75 °C
Electrical Characteristics Ta=25 °C
Item Symbol Condition Min. Typ. Max. Unit
Output voltage
Midpoint potential
Midpoint potential
difference/Output voltage
Total resistance
VO
VA, VB
|VA-VB|
VO
RT
VCC=5 V , H=14400A/m (Peak)
AC magnetic field θ =0 °
VCC=5 V , H=0 A/m
VCC=5 V , H=0 A/m
H=14400A/m (Peak)
AC magnetic field θ =0 °
150
2.475
500 650
2.525
15
800
mVp-p
V
%
Ω
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E88Z13D5X-TE
DM-232
Equivalent Circuit
Basic Performance
1) Operation principle
Bias magnetic field
H=14400A/m
Synthetic magnetic field (b)
External magnetic field H
VA
1
V
CC
RA
2
RB
RD
4
V
B
RC
GND
3
Synthetic
magnetic field (a)
1
External magnetic field H
Various resistances change according to the direction of
the combnied bias and external magnetic field.
¡) When the direction of the synthetic magnetic field is (a),
RA
2
RD
RA,RC : Minimum resistance
4
RB,RD : Maximum resistance
B
R
RC
¡¡) When the direction of the synthetic magnetic field is (b),
RA,RC : Maximum resistance
3
RB,RD : Minimum resistance
∗ Device internal structure
(Back of mark face)
3
Bias magnetic field
4
2
1
2) Power supply pin and output pin 3) Sensitivity direction
2
1
1
232
2
4
Differential amplifier
3
4
V
CC
Out put
The ferromagnetic magnetoresistance element differs
from the semiconductor magnetoresistance element and
hole element in that it responds only to the magnetic
Non-Sensitive
field within the element's surface. It is not sensitive to
3
GND
the magnetic field perpendicular to the element.
Sensitive
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