Sony DM-111A Datasheet

Magneto-Resistance Element
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Description
The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position.
Features
Low power consumption
38µW (Typ.) at VCC=5V
Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V and H=4000A/m
High reliability
Ensured through silicon nitride protective filming
DM-111A
M-102 (Plastic)
Absolute Maximum Ratings (Ta=25°C)
Supply voltage VCC 10 V
Operating temperature Topr –40 to +80 °C
Recommended Operating Condition 5V
Electrical Characteristics (Ta=25°C)
Item Symbol Condition Min. Typ. Max. Unit
Total resistance Midpoint potential
Output voltage
RT VC
VO
H=4000A/m, θ=45° VCC=5V , H=4000A/m Revoiving magnetic field VCC=5V , H=4000A/m Revoiving magnetic field
500
2.47
30
650
2.50
75
800
2.53
k
V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94706A5X-TE
Equivalent Circuit
RA RB
1
23
Introduction
1) Power supplying pin output pin
111A
H
θ
max
RA RB
123
min
DM-111A
RA : Resistance reduces as the
magnetic field revolves.
RB : Resistance increases as the
magnetic field revolves.
12 3
RA RB
2) Sensitive direction vs. Midpoint potential
Midpoint potential
CC
V
2
Hs
H
1
2
3
a
b
VCC
c
d
b
a
e
d
Direction of Magnetic­flux
e
Incidence
Sensitive
Non-sensitive
Direction of Magnetic­flux Incidence
Useful Region
c
Changes occur to the output voltage at the saturation region of V-H curve according to the direction of magnetic flux. These changes provide for the operation.
• With one rotation of magnetic flux, signals for 2 periods are obtained.
—2—
3) 0° Biasing magnetic field (Switching use)
DM-111A
Sensitive
4) 45° Biasing magnetic field (Analog use)
Biasing
V
H
V
Magnet
Biasing Magnetic Field
Detected Magnetic Field
1
2
3
Sensitive
Non-sensitive
+
Output GND
Biasing Magnet
V
H
Biasing Magnetic Field Detected Magnetic Field
Non-sensitive
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