![](/html/3d/3d48/3d48fc938e1c35cbf4bea237a6b537105847d438c9e62e96aa677a0aef9a7abe/bg1.png)
Magneto-Resistance Element
For the availability of this product, please contact the sales office.
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
• Low power consumption
38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
• High reliability
Ensured through silicon nitride protective filming
DM-111A
M-102 (Plastic)
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage VCC 10 V
• Operating temperature Topr –40 to +80 °C
• Storage temperature Tstg –50 to +100 °C
Recommended Operating Condition 5V
Electrical Characteristics (Ta=25°C)
Item Symbol Condition Min. Typ. Max. Unit
Total resistance
Midpoint potential
Output voltage
RT
VC
VO
H=4000A/m, θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
500
2.47
30
650
2.50
75
800
2.53
kΩ
V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E94706A5X-TE
![](/html/3d/3d48/3d48fc938e1c35cbf4bea237a6b537105847d438c9e62e96aa677a0aef9a7abe/bg2.png)
Equivalent Circuit
RA RB
1
23
Introduction
1) Power supplying pin output pin
111A
H
θ
max
RA RB
123
min
DM-111A
RA : Resistance reduces as the
magnetic field revolves.
RB : Resistance increases as the
magnetic field revolves.
12 3
RA
RB
2) Sensitive direction vs. Midpoint potential
Midpoint potential
CC
V
2
Hs
H
1
2
3
a
b
VCC
c
d
b
a
e
d
Direction of Magneticflux
e
Incidence
Sensitive
Non-sensitive
Direction of Magneticflux
Incidence
Useful Region
c
Changes occur to the output voltage at the saturation region
of V-H curve according to the direction of magnetic flux.
These changes provide for the operation.
• With one rotation of magnetic flux, signals for 2 periods are
obtained.
—2—
![](/html/3d/3d48/3d48fc938e1c35cbf4bea237a6b537105847d438c9e62e96aa677a0aef9a7abe/bg3.png)
3) 0° Biasing magnetic field
(Switching use)
DM-111A
Sensitive
4) 45° Biasing magnetic field
(Analog use)
Biasing
V
H
V
Magnet
Biasing Magnetic Field
Detected Magnetic Field
1
2
3
Sensitive
Non-sensitive
+
Output
GND
Biasing
Magnet
V
H
Biasing Magnetic Field
Detected Magnetic Field
Non-sensitive
—3—