Siemens SAB80C166W-M, SAB83C166W-5M, SAB83C166W-5M-T3, SAB83C166W-5M-T4, SAB83C166W-M Datasheet

Semiconductor Group 1 10.94

● High Performance 16-bit CPU with 4-Stage Pipeline

● 100 ns Instruction Cycle Time at 20 MHz CPU Clock

● 500 ns Multiplication (16 × 16 bits), 1 µs Division (32 / 16 bit)

● Enhanced Boolean Bit Manipulation Facilities

● Register-Based Design with Multiple Variable Register Banks

● Single-Cycle Context Switching Support

● Up to 256 KBytes Linear Address Space for Code and Data

● 1 KByte On-Chip RAM

● 32 KBytes On-Chip ROM (SAB 83C166W only)

● Programmable External Bus Characteristics for Different Address Ranges

● 8-Bit or 16-Bit External Data Bus

● Multiplexed or Demultiplexed External Address/Data Buses

● Hold and Hold-Acknowledge Bus Arbitration Support

● 512 Bytes On-Chip Special Function Register Area

● Idle and Power Down Modes

● 8-Channel Interrupt-Driven Single-Cycle Data Transfer Facilities via Peripheral Event

Controller (PEC)

● 16-Priority-Level Interrupt System

● 10-Channel 10-bit A/D Converter with 9.7 µs Conversion Time

● 16-Channel Capture/Compare Unit

● Two Multi-Functional General Purpose Timer Units with 5 Timers

● Two Serial Channels (USARTs)

● Programmable Watchdog Timer

● Up to 76 General Purpose I/O Lines

● Direct clock input without prescaler

● Supported by a Wealth of Development Tools like C-Compilers, Macro-Assembler Packages,

Emulators, Evaluation Boards, HLL-Debuggers, Simulators, Logic Analyzer Disassemblers,
Programming Boards

● On-Chip Bootstrap Loader

● 100-Pin Plastic MQFP Package (EIAJ)

C16x-Family of
High-Performance CMOS 16-Bit Microcontrollers

Preliminary
SAB 80C166W/83C166W / 83C166W 16-Bit Microcontroller

SAB 80C166W/

83C166W/

83C166W

SAB 80C166W/83C166W

Semiconductor Group 2

Introduction

The SAB 80C166W/83C166W is a representative of the Siemens SAB 80C166 family of full
featured single-chip CMOS microcontrollers. It combines high CPU performance (up to 10 million
instructions per second) with high peripheral functionality and enhanced IO-capabilities. These
devices derive the CPU clock signal (operating clock) directly from the on-chip oscillator without
using a prescaler. This reduces the device’s EME.

Figure 1
Logic Symbol

Ordering Information
Type Ordering Code Package Function

SAB 83C166W-5M On Request P-MQFP-100-2 16-bit microcontroller, 0 ˚C to +70 ˚C,

1 KByte RAM and 32 KByte ROM

SAB 83C166W-5M-T3Q67120-D... P-MQFP-100-2 16-bit microcontroller, -40 ˚C to +85 ˚C,

1 KByte RAM and 32 KByte ROM

SAB 83C166W-5M-T4Q67120-D... P-MQFP-100-2 16-bit microcontroller, -40 ˚C to +110 ˚C

1 KByte RAM and 32 KByte ROM

SAB 80C166W/
83C166W-M

On Request P-MQFP-100-2 16-bit microcontroller, 0 ˚C to +70 ˚C

1 KByte RAM

SAB

80C166W

SAB 80C166W/83C166W

Semiconductor Group 3

Note: The ordering codes (Q67120-D...) for the Mask-ROM versions are defined for each product

after verification of the respective ROM code.

Pin Configuration Rectangular P-MQFP-100-2

(top view)

Figure 2

SAB 80C166W/
83C166W-M-T3

Q67120-C864 P-MQFP-100-2 16-bit microcontroller, -40 ˚C to +85 ˚C

1 KByte RAM

SAB 80C166W/
83C166W-M-T4

Q67120-C917 P-MQFP-100-2 16-bit microcontroller, -40 ˚C to +110 ˚C

1 KByte RAM

Type Ordering Code Package Function

SAB 80C166W/

SAB 80C166W/83C166W

Semiconductor Group 4

Pin Definitions and Functions
Pin

No.

Symbol Input (I)

Output (O)

Function

16 - 17

16
17

P4.0 –
P4.1

I/O

O
O

Port 4 is a 2-bit bidirectional I/O port. It is bit-wise
programmable for input or output via direction bits. For a pin
configured as input, the output driver is put into high­impedance state.
In case of an external bus configuration, Port 4 can be used to
output the segment address lines:
P4.0 A16 Least Significant Segment Addr. Line
P4.1 A17 Most Significant Segment Addr. Line

20

19

XTAL1

XTAL2

I

O

XTAL1: Input to the oscillator amplifier and input to the

internal clock generator
XTAL2: Output of the oscillator amplifier circuit.
To clock the device from an external source, drive XTAL1,
while leaving XTAL2 unconnected. Minimum and maximum
high/low and rise/fall times specified in the AC Characteristics
must be observed.

22
23
24

BUSACT,
EBC1,
EBC0

I
I
I

External Bus Configuration selection inputs. These pins are
sampled during reset and select either the single chip mode or
one of the four external bus configurations:
BUSACT EBC1 EBC0 Mode/Bus Configuration
0 0 0 8-bit demultiplexed bus
0 0 1 8-bit multiplexed bus
0 1 0 16-bit muliplexed bus
0 1 1 16-bit demultiplexed bus
1 0 0 Single chip mode
1 0 1 Reserved.
1 1 0 Reserved.
1 1 1 Reserved.
ROMless versions must have pin BUSACT tied to ‘0’.

27

RSTIN I Reset Input with Schmitt-Trigger characteristics. A low level

at this pin for a specified duration while the oscillator is running
resets the SAB 80C166W/83C166W. An internal pullup
resistor permits power-on reset using only a capacitor
connected to VSS.

28

RSTOUT O Internal Reset Indication Output. This pin is set to a low

level when the part is executing either a hardware-, a
software- or a watchdog timer reset. RSTOUT remains low
until the EINIT (end of initialization) instruction is executed.

SAB 80C166W/83C166W

Semiconductor Group 5

29 NMI I Non-Maskable Interrupt Input. A high to low transition at this

pin causes the CPU to vector to the NMI trap routine. When
the PWRDN (power down) instruction is executed, the NMI pin
must be low in order to force the SAB 80C166W/83C166W to
go into power down mode. If NMI is high, when PWRDN is
executed, the part will continue to run in normal mode.
If not used, pull NMI high externally.

29 ALE O Address Latch Enable Output. Can be used for latching the

address into external memory or an address latch in the
multiplexed bus modes.

26 RD O External Memory Read Strobe. RD is activated for every

external instruction or data read access.

30 - 37
40 - 47

P1.0 –
P1.15

I/O Port 1 is a 16-bit bidirectional I/O port. It is bit-wise

programmable for input or output via direction bits. For a pin
configured as input, the output driver is put into high­impedance state. Port 1 is used as the 16-bit address bus (A)
in demultiplexed bus modes and also after switching from a
demultiplexed bus mode to a multiplexed bus mode..

48 - 53
56 - 59

P5.0 –
P5.9

I
I

Port 5 is a 10-bit input-only port with Schmitt-Trigger
characteristics. The pins of Port 5 also serve as the (up to 10)
analog input channels for the A/D converter, where P5.x
equals ANx (Analog input channel x).

62 - 77

62

75

76

77

P2.0 –
P2.15

I/O

I/O

I/O
O
I/O
O
I/O
I

Port 2 is a 16-bit bidirectional I/O port. It is bit-wise
programmable for input or output via direction bits. For a pin
configured as input, the output driver is put into high­impedance state.
The following Port 2 pins also serve for alternate functions:
P2.0 CC0IO CAPCOM: CC0 Cap.-In/Comp.Out

... ... ...

P2.13 CC13IO CAPCOM: CC13 Cap.-In/Comp.Out,

BREQ External Bus Request Output
P2.14 CC14IO CAPCOM: CC14 Cap.-In/Comp.Out,

HLDA External Bus Hold Acknowl. Output
P2.15 CC15IO CAPCOM: CC15 Cap.-In/Comp.Out,

HOLD External Bus Hold Request Input

Pin Definitions and Functions (cont’d)
Pin

No.

Symbol Input (I)

Output (O)

Function

SAB 80C166W/83C166W

Semiconductor Group 6

80 - 92,
95 - 97

80
81
82
83
84
85

86
87

88
89
90
91
92
95
96
97

P3.0 –
P3.15

I/O
I/O

I
O
I
O
I
I

I
I

O
I/O
O
I/O
O
O
I
O

Port 3 is a 16-bit bidirectional I/O port. It is bit-wise
programmable for input or output via direction bits. For a pin
configured as input, the output driver is put into high­impedance state.
The following Port 3 pins also serve for alternate functions:
P3.0 T0IN CAPCOM Timer T0 Count Input
P3.1 T6OUT GPT2 Timer T6 Toggle Latch Output
P3.2 CAPIN GPT2 Register CAPREL Capture Input
P3.3 T3OUT GPT1 Timer T3 Toggle Latch Output
P3.4 T3EUD GPT1 Timer T3 Ext.Up/Down Ctrl.Input
P3.5 T4IN GPT1 Timer T4 Input for

Count/Gate/Reload/Capture
P3.6 T3IN GPT1 Timer T3 Count/Gate Input
P3.7 T2IN GPT1 Timer T2 Input for

Count/Gate/Reload/Capture
P3.8 TxD1 ASC1 Clock/Data Output (Asyn./Syn.)
P3.9 RxD1 ASC1 Data Input (Asyn.) or I/O (Syn.)
P3.10 T×D0 ASC0 Clock/Data Output (Asyn./Syn.)
P3.11 R×D0 ASC0 Data Input (Asyn.) or I/O (Syn.)
P3.12 BHE Ext. Memory High Byte Enable Signal,
P3.13 WR External Memory Write Strobe
P3.14 READY Ready Signal Input
P3.15 CLKOUT System Clock Output (=CPU Clock)

98 – 5
8 – 15

P0.0 –
P0.15

I/O Port 0 is a 16-bit bidirectional IO port. It is bit-wise

programmable for input or output via direction bits. For a pin
configured as input, the output driver is put into high­impedance state.
In case of an external bus configuration, Port 0 serves as the
address (A) and address/data (AD) bus in multiplexed bus
modes and as the data (D) bus in demultiplexed bus modes.

Demultiplexed bus modes:

Data Path Width: 8-bit 16-bit
P0.0 – P0.7: D0 – D7 D0 - D7
P0.8 – P0.15: output! D8 - D15

Multiplexed bus modes:

Data Path Width: 8-bit 16-bit
P0.0 – P0.7: AD0 – AD7 AD0 - AD7
P0.8 – P0.15: A8 - A15 AD8 - AD15

54

V

AREF

- Reference voltage for the A/D converter.

55

V

AGND

- Reference ground for the A/D converter.

Pin Definitions and Functions (cont’d)
Pin

No.

Symbol Input (I)

Output (O)

Function

SAB 80C166W/83C166W

Semiconductor Group 7

7, 18,
38, 61,
79, 93

V

CC

- Digital Supply Voltage:

+ 5 V during normal operation and idle mode.
≥ 2.5 V during power down mode

6, 21,
39, 60,
78, 94

V

SS

- Digital Ground.

Pin Definitions and Functions (cont’d)
Pin

No.

Symbol Input (I)

Output (O)

Function

SAB 80C166W/83C166W

Semiconductor Group 8

Functional Description

The architecture of the SAB 80C166W/83C166W combines advantages of both RISC and CISC
processors and of advanced peripheral subsystems in a very well-balanced way. The following
block diagram gives an overview of the different on-chip components and of the advanced, high
bandwidth internal bus structure of the SAB 80C166W/83C166W.

Note: All time specifications refer to a CPU clock of 20 MHz

(see definition in the AC Characteristics section).

Figure 3
Block Diagram

SAB 80C166W/83C166W

Semiconductor Group 9

Memory Organization

The memory space of the SAB 80C166W/83C166W is configured in a Von Neumann architecture
which means that code memory, data memory, registers and I/O ports are organized within the
same linear address space which includes 256 KBytes. Address space expansion to 16 MBytes is
provided for future versions. The entire memory space can be accessed bytewise or wordwise.
Particular portions of the on-chip memory have additionally been made directly bit addressable.

The SAB 83C166W contains 32 KBytes of on-chip mask-programmable ROM for code or constant
data. The ROM can be mapped to either segment 0 or segment 1.

1 KByte of on-chip RAM is provided as a storage for user defined variables, for the system stack,
general purpose register banks and even for code. A register bank can consist of up to 16 wordwide
(R0 to R15) and/or bytewide (RL0, RH0, …, RL7, RH7) so-called General Purpose Registers
(GPRs).

512 bytes of the address space are reserved for the Special Function Register area. SFRs are
wordwide registers which are used for controlling and monitoring functions of the different on-chip
units. 98 SFRs are currently implemented. Unused SFR addresses are reserved for future
members of the SAB 80C166 family.

In order to meet the needs of designs where more memory is required than is provided on chip, up
to 256 KBytes of external RAM and/or ROM can be connected to the microcontroller.

External Bus Controller

All of the external memory accesses are performed by a particular on-chip External Bus Controller
(EBC). It can be programmed either to Single Chip Mode when no external memory is required, or
to one of four different external memory access modes, which are as follows:

– 16-/18-bit Addresses, 16-bit Data, Demultiplexed
– 16-/18-bit Addresses, 16-bit Data, Multiplexed
– 16-/18-bit Addresses, 8-bit Data, Multiplexed
– 16-/18-bit Addresses, 8-bit Data, Demultiplexed
In the demultiplexed bus modes, addresses are output on Port 1 and data is input/output on Port 0.

In the multiplexed bus modes both addresses and data use Port 0 for input/output.
Important timing characteristics of the external bus interface (Memory Cycle Time, Memory Tri-

State Time, Read/Write Delay and Length of ALE, ie. address setup/hold time with respect to ALE)
have been made programmable to allow the user the adaption of a wide range of different types of
memories. In addition, different address ranges may be accessed with different bus characteristics.
Access to very slow memories is supported via a particular ‘Ready’ function. A HOLD/HLDA
protocol is available for bus arbitration.

For applications which require less than 64 KBytes of external memory space, a non-segmented
memory model can be selected. In this case all memory locations can be addressed by 16 bits and
Port 4 is not required to output the additional segment address lines.

SAB 80C166W/83C166W

Semiconductor Group 10

Central Processing Unit (CPU)

The main core of the CPU consists of a 4-stage instruction pipeline, a 16-bit arithmetic and logic unit
(ALU) and dedicated SFRs. Additional hardware has been spent for a separate multiply and divide
unit, a bit-mask generator and a barrel shifter.

Based on these hardware provisions, most of the SAB 80C166W/83C166W’s instructions can be
executed in just one machine cycle which requires 100 ns at 20-MHz CPU clock. For example, shift
and rotate instructions are always processed during one machine cycle independent of the number
of bits to be shifted. All multiple-cycle instructions have been optimized so that they can be executed
very fast as well: branches in 2 cycles, a 16× 16 bit multiplication in 5 cycles and a 32-/16 bit division
in 10 cycles. Another pipeline optimization, the so-called ‘Jump Cache’, allows reducing the
execution time of repeatedly performed jumps in a loop from 2 cycles to 1 cycle.

The CPU disposes of an actual register context consisting of up to 16 wordwide GPRs which are
physically allocated within the on-chip RAM area. A Context Pointer (CP) register determines the
base address of the active register bank to be accessed by the CPU at a time. The number of
register banks is only restricted by the available internal RAM space. For easy parameter passing,
a register banks may overlap others.

Figure 4
CPU Block Diagram

32 KByte in the
SAB 83C166W

1 KByte

SAB 80C166W/83C166W

Semiconductor Group 11

A system stack of up to 512 bytes is provided as a storage for temporary data. The system stack is
allocated in the on-chip RAM area, and it is accessed by the CPU via the stack pointer (SP) register.
Two separate SFRs, STKOV and STKUN, are implicitly compared against the stack pointer value
upon each stack access for the detection of a stack overflow or underflow.

The high performance offered by the hardware implementation of the CPU can efficiently be utilized
by a programmer via the highly efficient SAB 80C166W/83C166W instruction set which includes the
following instruction classes:

– Arithmetic Instructions
– Logical Instructions
– Boolean Bit Manipulation Instructions
– Compare and Loop Control Instructions
– Shift and Rotate Instructions
– Prioritize Instruction
– Data Movement Instructions
– System Stack Instructions
– Jump and Call Instructions
– Return Instructions
– System Control Instructions
– Miscellaneous Instructions

The basic instruction length is either 2 or 4 bytes. Possible operand types are bits, bytes and words.
A variety of direct, indirect or immediate addressing modes are provided to specify the required
operands.

SAB 80C166W/83C166W

Semiconductor Group 12

Interrupt System

With an interrupt response time within a range from just 250 ns to 600 ns (in case of internal
program execution), the SAB 80C166W/83C166W is capable of reacting very fast to the occurence
of non-deterministic events.

The architecture of the SAB 80C166W/83C166W supports several mechanisms for fast and flexible
response to service requests that can be generated from various sources internal or external to the
microcontroller. Any of these interrupt requests can be programmed to being serviced by the
Interrupt Controller or by the Peripheral Event Controller (PEC).

In contrast to a standard interrupt service where the current program execution is suspended and
a branch to the interrupt vector table is performed, just one cycle is ‘stolen’ from the current CPU
activity to perform a PEC service. A PEC service implies a single byte or word data transfer between
any two memory locations with an additional increment of either the PEC source or the destination
pointer. An individual PEC transfer counter is implicity decremented for each PEC service except
when performing in the continuous transfer mode. When this counter reaches zero, a standard
interrupt is performed to the corresponding source related vector location. PEC services are very
well suited, for example, for supporting the transmission or reception of blocks of data, or for
transferring A/D converted results to a memory table. The SAB 80C166W/83C166W has 8 PEC
channels each of which offers such fast interrupt-driven data transfer capabilities.

A separate control register which contains an interrupt request flag, an interrupt enable flag and an
interrupt priority bitfield exists for each of the possible interrupt sources. Via its related register, each
source can be programmed to one of sixteen interrupt priority levels. Once having been accepted
by the CPU, an interrupt service can only be interrupted by a higher prioritized service request. For
the standard interrupt processing, each of the possible interrupt sources has a dedicated vector
location.

Software interrupts are supported by means of the ‘TRAP’ instruction in combination with an
individual trap (interrupt) number.

The following table shows all of the possible SAB 80C166W/83C166W interrupt sources and the
corresponding hardware-related interrupt flags, vectors, vector locations and trap (interrupt)
numbers:

SAB 80C166W/83C166W

Semiconductor Group 13

Source of Interrupt or
PEC Service Request

Request
Flag

Enable
Flag

Interrupt
Vector

Vector
Location

Trap
Number

CAPCOM Register 0 CC0IR CC0IE CC0INT 40

H

10

H

CAPCOM Register 1 CC1IR CC1IE CC1INT 44

H

11

H

CAPCOM Register 2 CC2IR CC2IE CC2INT 48

H

12

H

CAPCOM Register 3 CC3IR CC3IE CC3INT 4C

H

13

H

CAPCOM Register 4 CC4IR CC4IE CC4INT 50

H

14

H

CAPCOM Register 5 CC5IR CC5IE CC5INT 54

H

15

H

CAPCOM Register 6 CC6IR CC6IE CC6INT 58

H

16

H

CAPCOM Register 7 CC7IR CC7IE CC7INT 5C

H

17

H

CAPCOM Register 8 CC8IR CC8IE CC8INT 60

H

18

H

CAPCOM Register 9 CC9IR CC9IE CC9INT 64

H

19

H

CAPCOM Register 10 CC10IR CC10IE CC10INT 68

H

1A

H

CAPCOM Register 11 CC11IR CC11IE CC11INT 6C

H

1B

H

CAPCOM Register 12 CC12IR CC12IE CC12INT 70

H

1C

H

CAPCOM Register 13 CC13IR CC13IE CC13INT 74

H

1D

H

CAPCOM Register 14 CC14IR CC14IE CC14INT 78

H

1E

H

CAPCOM Register 15 CC15IR CC15IE CC15INT 7C

H

1F

H

CAPCOM Timer 0 T0IR T0IE T0INT 80

H

20

H

CAPCOM Timer 1 T1IR T1IE T1INT 84

H

21

H

GPT1 Timer 2 T2IR T2IE T2INT 88

H

22

H

GPT1 Timer 3 T3IR T3IE T3INT 8C

H

23

H

GPT1 Timer 4 T4IR T4IE T4INT 90

H

24

H

GPT2 Timer 5 T5IR T5IE T5INT 94

H

25

H

GPT2 Timer 6 T6IR T6IE T6INT 98

H

26

H

GPT2 CAPREL Register CRIR CRIE CRINT 9C

H

27

H

A/D Conversion Complete ADCIR ADCIE ADCINT A0

H

28

H

A/D Overrun Error ADEIR ADEIE ADEINT A4

H

29

H

ASC0 Transmit S0TIR S0TIE S0TINT A8

H

2A

H

ASC0 Receive S0RIR S0RIE S0RINT AC

H

2B

H

ASC0 Error S0EIR S0EIE S0EINT B0

H

2C

H

ASC1 Transmit S1TIR S1TIE S1TINT B4

H

2D

H

ASC1 Receive S1RIR S1RIE S1RINT B8

H

2E

H

ASC1 Error S1EIR S1EIE S1EINT BC

H

2F

H

SAB 80C166W/83C166W

Semiconductor Group 14

The SAB 80C166W/83C166W also provides an excellent mechanism to identify and to process
exceptions or error conditions that arise during run-time, so-called ‘Hardware Traps’. Hardware
traps cause immediate non-maskable system reaction which is similar to a standard interrupt
service (branching to a dedicated vector table location). The occurence of a hardware trap is
additionally signified by an individual bit in the trap flag register (TFR). Except when another higher
prioritized trap service is in progress, a hardware trap will interrupt any actual program execution. In
turn, hardware trap services can normally not be interrupted by standard or PEC interrupts.

The following table shows all of the possible exceptions or error conditions that can arise during run­time:

Exception Condition Trap

Flag

Trap
Vector

Vector
Location

Trap
Number

Trap
Priority

Reset Functions:

Hardware Reset
Software Reset
Watchdog Timer Overflow

RESET
RESET
RESET

0000

H

0000

H

0000

H

00

H

00

H

00

H

III
III
III

Class A Hardware Traps:

Non-Maskable Interrupt
Stack Overflow
Stack Underflow

NMI
STKOF
STKUF

NMITRAP
STOTRAP
STUTRAP

0008

H

0010

H

0018

H

02

H

04

H

06

H

II
II
II

Class B Hardware Traps:

Undefined Opcode
Protected Instruction
Fault
Illegal Word Operand
Access
Illegal Instruction Access
Illegal External Bus
Access

UNDOPC
PRTFLT

ILLOPA

ILLINA
ILLBUS

BTRAP
BTRAP

BTRAP

BTRAP
BTRAP

0028

H

0028

H

0028

H

0028

H

0028

H

0A

H

0A

H

0A

H

0A

H

0A

H

I
I

I

I
I

Reserved [002C

H

–

003CH]

[0BH – 0FH]

Software Traps

TRAP Instruction

Any
[0000

H

–
01FCH]
in steps
of 04

H

Any
[00H – 7FH]

Current
CPU
Priority

SAB 80C166W/83C166W

Semiconductor Group 15

Capture/Compare (CAPCOM) Unit

The CAPCOM unit supports generation and control of timing sequences on up to 16 channels with
a maximum resolution of 400 ns (@ 20 MHz CPU clock). The CAPCOM unit is typically used to
handle high speed I/O tasks such as pulse and waveform generation, pulse width modulation
(PMW), Digital to Analog (D/A) conversion, software timing, or time recording relative to external
events.

Two 16-bit timers (T0/T1) with reload registers provide two independent time bases for the capture/
compare register array.

The input clock for the timers is programmable to several prescaled values of the CPU clock, or may
be derived from an overflow/underflow of timer T6 in module GPT2. This provides a wide range of
variation for the timer period and resolution and allows precise adjustments to the application
specific requirements. In addition, an external count input for CAPCOM timer T0 allows event
scheduling for the capture/compare registers relative to external events.

The capture/compare register array contains 16 dual purpose capture/compare registers, each of
which may be individually allocated to either CAPCOM timer T0 or T1, and programmed for capture
or compare function. Each register has one port pin associated with it which serves as an input pin
for triggering the capture function, or as an output pin to indicate the occurence of a compare event.

When a capture/compare register has been selected for capture mode, the current contents of the
allocated timer will be latched (captured) into the capture/compare register in response to an
external event at the port pin which is associated with this register. In addition, a specific interrupt
request for this capture/compare register is generated. Either a positive, a negative, or both a
positive and a negative external signal transition at the pin can be selected as the triggering event.
The contents of all registers which have been selected for one of the five compare modes are
continuously compared with the contents of the allocated timers. When a match occurs between the
timer value and the value in a capture/compare register, specific actions will be taken based on the
selected compare mode.

Compare Modes Function

Mode 0 Interrupt-only compare mode;

several compare interrupts per timer period are possible

Mode 1 Pin toggles on each compare match;

several compare events per timer period are possible

Mode 2 Interrupt-only compare mode;

only one compare interrupt per timer period is generated

Mode 3 Pin set ‘1’ on match; pin reset ‘0’ on compare time overflow;

only one compare event per timer period is generated

Double
Register Mode

Two registers operate on one pin; pin toggles on each compare match;
several compare events per timer period are possible.

SAB 80C166W/83C166W

Semiconductor Group 16

Figure 5
CAPCOM-Unit Block Diagram

x = 0
y = 1

SAB 80C166W/83C166W

Semiconductor Group 17

General Purpose Timer (GPT) Unit

The GPT unit represents a very flexible multifunctional timer/counter structure which may be used
for many different time related tasks such as event timing and counting, pulse width and duty cycle
measurements, pulse generation, or pulse multiplication.

The GPT unit incorporates five 16-bit timers which are organized in two separate modules, GPT1
and GPT2. Each timer in each module may operate independently in a number of different modes,
or may be concatenated with another timer of the same module.

Each of the three timers T2, T3, T4 of module GPT1 can be configured individually for one of three
basic modes of operation, which are Timer, Gated Timer, and Counter Mode. In Timer Mode, the
input clock for a timer is derived from the CPU clock, divided by a programmable prescaler, while
Counter Mode allows a timer to be clocked in reference to external events.
Pulse width or duty cycle measurement is supported in Gated Timer Mode, where the operation of
a timer is controlled by the ‘gate’ level on an external input pin. For these purposes, each timer has
one associated port pin (TxIN) which serves as gate or clock input. The maximum resolution of the
timers in module GPT1 is 400 ns (@ 20 MHz CPU clock).

Figure 6
Block Diagram of GPT1

SAB 80C166W/83C166W

Semiconductor Group 18

The count direction (up/down) for each timer is programmable by software. For timer T3 the count
direction may additionally be altered dynamically by an external signal on a port pin (T3EUD) to
facilitate e. g. position tracking.

Timer T3 has an output toggle latch (T3OTL) which changes its state on each timer overflow/
underflow. The state of this latch may be output on a port pin (T3OUT) e.g. for timeout monitoring
of external hardware components, or may be used internally to clock timers T2 and T4 for
measuring long time periods with high resolution.

In addition to their basic operating modes, timers T2 and T4 may be configured as reload or capture
registers for timer T3. When used as capture or reload registers, timers T2 and T4 are stopped. The
contents of timer T3 is captured into T2 or T4 in response to a signal at their associated input pins
(TxIN). Timer T3 is reloaded with the contents of T2 or T4 triggered either by an external signal or
by a selectable state transition of its toggle latch T3OTL. When both T2 and T4 are configured to
alternately reload T3 on opposite state transitions of T3OTL with the low and high times of a PWM
signal, this signal can be constantly generated without software intervention.

Figure 7
Block Diagram of GPT2

SAB 80C166W/83C166W

Semiconductor Group 19

With its maximum resolution of 200 ns (@ 20 MHz), the GPT2 module provides precise event
control and time measurement. It includes two timers (T5, T6) and a capture/reload register
(CAPREL). Both timers can be clocked with an input clock which is derived from the CPU clock via
a programmable prescaler. The count direction (up/down) for each timer is programmable by
software. Concatenation of the timers is supported via the output toggle latch (T6OTL) of timer T6,
which changes its state on each timer overflow/underflow.

The state of this latch may be used to clock timer T5, or it may be output on a port pin (T6OUT). The
overflows/underflows of timer T6 can additionally be used to clock the CAPCOM timers T0 or T1,
and to cause a reload from the CAPREL register. The CAPREL register may capture the contents
of timer T5 based on an external signal transition on the corresponding port pin (CAPIN), and timer
T5 may optionally be cleared after the capture procedure. This allows absolute time differences to
be measured or pulse multiplication to be performed without software overhead.

A/D Converter

For analog signal measurement, a 10-bit A/D converter with 10 multiplexed input channels and a
sample and hold circuit has been integrated on-chip. It uses the method of successive
approximation. The sample time (for loading the capacitors) and the conversion time adds up to

9.7 us @ 20 MHz CPU clock.
Overrun error detection/protection is provided for the conversion result register (ADDAT): an

interrupt request will be generated when the result of a previous conversion has not been read from
the result register at the time the next conversion is complete.

For applications which require less than 10 analog input channels, the remaining channel inputs can
be used as digital input port pins.

The A/D converter of the SAB 80C166W/83C166W supports four different conversion modes. In the
standard Single Channel conversion mode, the analog level on a specified channel is sampled once
and converted to a digital result. In the Single Channel Continuous mode, the analog level on a
specified channel is repeatedly sampled and converted without software intervention. In the Auto
Scan mode, the analog levels on a prespecified number of channels are sequentially sampled and
converted. In the Auto Scan Continuous mode, the number of prespecified channels is repeatedly
sampled and converted.

The Peripheral Event Controller (PEC) may be used to automatically store the conversion results
into a table in memory for later evaluation, without requiring the overhead of entering and exiting
interrupt routines for each data transfer.

SAB 80C166W/83C166W

Semiconductor Group 20

Parallel Ports

The SAB 80C166W/83C166W provides up to 76 I/O lines which are organized into five input/output
ports and one input port. All port lines are bit-addressable, and all input/output lines are individually
(bit-wise) programmable as inputs or outputs via direction registers. The I/O ports are true
bidirectional ports which are switched to high impedance state when configured as inputs. During
the internal reset, all port pins are configured as inputs.

All port lines have programmable alternate input or output functions associated with them. Port 0
and Port 1 may be used as address and data lines when accessing external memory, while Port 4
outputs the additional segment address bits A17/A16 in systems where segmentation is enabled to
access more than 64 KBytes of memory. Port 2 is associated with the capture inputs or compare
outputs of the CAPCOM unit and/or with optional bus arbitration signals (BREQ, HLDA, HOLD).
Port 3 includes alternate functions of timers, serial interfaces, optional bus control signals (WR,
BHE, READY) and the system clock output (CLKOUT). Port 5 is used for the analog input channels
to the A/D converter. All port lines that are not used for these alternate functions may be used as
general purpose I/O lines.

Serial Channels

Serial communication with other microcontrollers, processors, terminals or external peripheral
components is provided by two serial interfaces with identical functionality, Asynchronous/
Synchronous Serial Channels ASC0 and ASC1.

They are upward compatible with the serial ports of the Siemens SAB 8051x microcontroller family
and support full-duplex asynchronous communication up to 625 Kbaud and half-duplex
synchronous communication up to 2.5 Mbaud @ 20 MHz CPU clock.

Two dedicated baud rate generators allow to set up all standard baud rates without oscillator tuning.
For transmission, reception, and erroneous reception 3 separate interrupt vectors are provided for
each serial channel.

In asynchronous mode, 8- or 9-bit data frames are transmitted or received, preceded by a start bit
and terminated by one or two stop bits. For multiprocessor communication, a mechanism to
distinguish address from data bytes has been included (8-bit data + wake up bit mode).
In synchronous mode one data byte is transmitted or received synchronously to a shift clock which
is generated by the SAB 80C166W/83C166W.

A loop back option is available for testing purposes.
A number of optional hardware error detection capabilities has been included to increase the

reliability of data transfers. A parity bit can automatically be generated on transmission or be
checked on reception. Framing error detection allows to recognize data frames with missing stop
bits. An overrun error will be generated, if the last character received has not been read out of the
receive buffer register at the time the reception of a new character is complete.

SAB 80C166W/83C166W

Semiconductor Group 21

Watchdog Timer

The Watchdog Timer represents one of the fail-safe mechanisms which have been implemented to
prevent the controller from malfunctioning for longer periods of time.

The Watchdog Timer is always enabled after a reset of the chip, and can only be disabled in the time
interval until the EINIT (end of initialization) instruction has been executed. Thus, the chip’s start-up
procedure is always monitored. The software has to be designed to service the Watchdog Timer
before it overflows. If, due to hardware or software related failures, the software fails to do so, the
Watchdog Timer overflows and generates an internal hardware reset and pulls the RSTOUT pin low
in order to allow external hardware components to be reset.

The Watchdog Timer is a 16-bit timer, clocked with the CPU clock divided either by 2 or by 128. The
high byte of the Watchdog Timer register can be set to a prespecified reload value (stored in
WDTREL) in order to allow further variation of the monitored time interval. Each time it is serviced
by the application software, the high byte of the Watchdog Timer is reloaded. Thus, time intervals
between 25 µs and 420 ms can be monitored (@ 20 MHz CPU clock). The default Watchdog Timer
interval after reset is 6.55 ms (@ 20 MHz CPU clock).

Bootstrap Loader

The SAB 80C166W/83C166W provides a built-in bootstrap loader (BSL), which allows to start
program execution out of the SAB 80C166W/83C166W’s internal RAM. This start program is
loaded via the serial interface ASC0 and does not require external memory or an internal ROM.

The SAB 80C166W/83C166W enters BSL mode, when ALE is sampled high at the end of a
hardware reset and if NMI becomes active directly after the end of the internal reset sequence. BSL
mode is entered independent of the bus mode selected via EBC0, EBC1 and BUSACT.

After entering BSL mode the SAB 80C166W/83C166W scans the RXD0 line to receive a zero byte,
ie. one start bit, eight ‘0’ data bits and one stop bit. From the duration of this zero byte it calculates
the corresponding baudrate factor with respect to the current CPU clock and initializes ASC0
accordingly. Using this baudrate, an acknowledge byte is returned to the host that provides the
loaded data. The SAB 80C166W/83C166W returns the value <55H>.

The next 32 bytes received via ASC0 are stored sequentially into locations 0FA40H through
0FA5FH of the internal RAM. To execute the loaded code the BSL then jumps to location 0FA40H.
The loaded program may load additional code / data, change modes, etc.

The SAB 80C166W/83C166W exits BSL mode upon a software reset (ignores the ALE level) or a
hardware reset (remove conditions for entering BSL mode before).

Instruction Set Summary

The summary on the following pages lists the instructions of the SAB 80C166W/83C166W ordered
into logical groups.

SAB 80C166W/83C166W

Semiconductor Group 22

Instruction Set Summary
Mnemonic Description Bytes

Arithmetic Operations

ADD Rw, Rw Add direct word GPR to direct GPR 2
ADD Rw, [Rw] Add indirect word memory to direct GPR 2
ADD Rw, [Rw +] Add indirect word memory to direct GPR and post-

increment source pointer by 2

2

ADD Rw, #data3 Add immediate word data to direct GPR 2
ADD reg, #data16 Add immediate word data to direct register 4
ADD reg, mem Add direct word memory to direct register 4
ADD mem, reg Add direct word register to direct memory 4
ADDB Rb, Rb Add direct byte GPR to direct GPR 2
ADDB Rb, [Rw] Add indirect byte memory to direct GPR 2
ADDB Rb, [Rw +] Add indirect byte memory to direct GPR and

post-increment source pointer by 1

2

ADDB Rb, #data3 Add immediate byte data to direct GPR 2
ADDB reg, #data8 Add immediate byte data to direct register 4
ADDB reg, mem Add direct byte memory to direct register 4
ADDB mem, reg Add direct byte register to direct memory 4
ADDC Rw, Rw Add direct word GPR to direct GPR with Carry 2
ADDC Rw, [Rw] Add indirect word memory to direct GPR with Carry 2
ADDC Rw, [Rw +] Add indirect word memory to direct GPR with Carry and

post-increment source pointer by 2

2

ADDC Rw, #data3 Add immediate word data to direct GPR with Carry 2
ADDC reg, #data16 Add immediate word data to direct register with Carry 4
ADDC reg, mem Add direct word memory to direct register with Carry 4
ADDC mem, reg Add direct word register to direct memory with Carry 4
ADDCB Rb, Rb Add direct byte GPR to direct GPR with Carry 2
ADDCB Rb, [Rw] Add indirect byte memory to direct GPR with Carry 2
ADDCB Rb, [Rw +] Add indirect byte memory to direct GPR with Carry and

post-increment source pointer by 1

2

ADDCB Rb, #data3 Add immediate byte data to direct GPR with Carry 2
ADDCB reg, #data8 Add immediate byte data to direct register with Carry 4
ADDCB reg, mem Add direct byte memory to direct register with Carry 4

SAB 80C166W/83C166W

Semiconductor Group 23

Arithmetic Operations (cont’d)
ADDCB mem, reg Add direct byte register to direct memory with Carry 4

SUB Rw, Rw Subtract direct word GPR from direct GPR 2
SUB Rw, [Rw] Subtract indirect word memory from direct GPR 2
SUB Rw, [Rw +] Subtract indirect word memory from direct GPR and

post-increment source pointer by 2

2

SUB Rw, #data3 Subtract immediate word data from direct GPR 2
SUB reg, #data16 Subtract immediate word data from direct register 4
SUB reg, mem Subtract direct word memory from direct register 4
SUB mem, reg Subtract direct word register from direct memory 4
SUBB Rb, Rb Subtract direct byte GPR from direct GPR 2
SUBB Rb, [Rw] Subtract indirect byte memory from direct GPR 2
SUBB Rb, [Rw +] Subtract indirect byte memory from direct GPR and

post-increment source pointer by 1

2

SUBB Rb, #data3 Subtract immediate byte data from direct GPR 2
SUBB reg, #data8 Subtract immediate byte data from direct register 4
SUBB reg, mem Subtract direct byte memory from direct register 4
SUBB mem, reg Subtract direct byte register from direct memory 4
SUBC Rw, Rw Subtract direct word GPR from direct GPR with Carry 2
SUBC Rw, [Rw] Subtract indirect word memory from direct GPR with Carry 2
SUBC Rw, [Rw +] Subtract indirect word memory from direct GPR with

Carry and post-increment source pointer by 2

2

SUBC Rw, #data3 Subtract immediate word data from direct GPR with Carry 2
SUBC reg, #data16 Subtract immediate word data from direct register with

Carry

4

SUBC reg, mem Subtract direct word memory from direct register with Carry 4
SUBC mem, reg Subtract direct word register from direct memory with Carry 4
SUBCB Rb, Rb Subtract direct byte GPR from direct GPR with Carry 2
SUBCB Rb, [Rw] Subtract indirect byte memory from direct GPR with Carry 2
SUBCB Rb, [Rw +] Subtract indirect byte memory from direct GPR with Carry

and post-increment source pointer by 1

2

SUBCB Rb, #data3 Subtract immediate byte data from direct GPR with Carry 2
SUBCB reg, #data8 Subtract immediate byte data from direct register with Carry 4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 24

Arithmetic Operations (cont’d)
SUBCB reg, mem Subtract direct byte memory from direct register with Carry 4

SUBCB mem, reg Subtract direct byte register from direct memory with Carry 4
MUL Rw, Rw Signed multiply direct GPR by direct GPR (16-16-bit) 2
MULU Rw, Rw Unsigned multiply direct GPR by direct GPR (16-16-bit) 2
DIV Rw Signed divide register MDL by direct GPR (16-/16-bit) 2
DIVL Rw Signed long divide register MD by direct GPR (32-/16-bit) 2
DIVLU Rw Unsigned long divide register MD by direct GPR

(32-/16-bit)

2

DIVU Rw Unsigned divide register MDL by direct GPR (16-/16-bit) 2
CPL Rw Complement direct word GPR 2
CPLB Rb Complement direct byte GPR 2
NEG Rw Negate direct word GPR 2
NEGB Rb Negate direct byte GPR 2

Logical Instructions

AND Rw, Rw Bitwise AND direct word GPR with direct GPR 2
AND Rw, [Rw] Bitwise AND indirect word memory with direct GPR 2
AND Rw, [Rw +] Bitwise AND indirect word memory with direct GPR and

post-increment source pointer by 2

2

AND Rw, #data3 Bitwise AND immediate word data with direct GPR 2
AND reg, #data16 Bitwise AND immediate word data with direct register 4
AND reg, mem Bitwise AND direct word memory with direct register 4
AND mem, reg Bitwise AND direct word register with direct memory 4
ANDB Rb, Rb Bitwise AND direct byte GPR with direct GPR 2
ANDB Rb, [Rw] Bitwise AND indirect byte memory with direct GPR 2
ANDB Rb, [Rw +] Bitwise AND indirect byte memory with direct GPR

and post-increment source pointer by 1

2

ANDB Rb, #data3 Bitwise AND immediate byte data with direct GPR 2
ANDB reg, #data8 Bitwise AND immediate byte data with direct register 4
ANDB reg, mem Bitwise AND direct byte memory with direct register 4
ANDB mem, reg Bitwise AND direct byte register with direct memory 4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 25

Logical Instructions (cont’d)
OR Rw, Rw Bitwise OR direct word GPR with direct GPR 2

OR Rw, [Rw] Bitwise OR indirect word memory with direct GPR 2
OR Rw, [Rw +] Bitwise OR indirect word memory with direct GPR

and post-increment source pointer by 2

2

OR Rw, #data3 Bitwise OR immediate word data with direct GPR 2
OR reg, #data16 Bitwise OR immediate word data with direct register 4
OR reg, mem Bitwise OR direct word memory with direct register 4
OR mem, reg Bitwise OR direct word register with direct memory 4
ORB Rb, Rb Bitwise OR direct byte GPR with direct GPR 2
ORB Rb, [Rw] Bitwise OR indirect byte memory with direct GPR 2
ORB Rb, [Rw +] Bitwise OR indirect byte memory with direct GPR and

post-increment source pointer by 1

2

ORB Rb, #data3 Bitwise OR immediate byte data with direct GPR 2
ORB reg, #data8 Bitwise OR immediate byte data with direct register 4
ORB reg, mem Bitwise OR direct byte memory with direct register 4
ORB mem, reg Bitwise OR direct byte register with direct memory 4
XOR Rw, Rw Bitwise XOR direct word GPR with direct GPR 2
XOR Rw, [Rw] Bitwise XOR indirect word memory with direct GPR 2
XOR Rw, [Rw +] Bitwise XOR indirect word memory with direct GPR and

post-increment source pointer by 2

2

XOR Rw, #data3 Bitwise XOR immediate word data with direct GPR 2
XOR reg, #data16 Bitwise XOR immediate word data with direct register 4
XOR reg, mem Bitwise XOR direct word memory with direct register 4
XOR mem, reg Bitwise XOR direct word register with direct memory 4
XORB Rb, Rb Bitwise XOR direct byte GPR with direct GPR 2
XORB Rb, [Rw] Bitwise XOR indirect byte memory with direct GPR 2
XORB Rb, [Rw +] Bitwise XOR indirect byte memory with direct GPR and

post-increment source pointer by 1

2

XORB Rb, #data3 Bitwise XOR immediate byte data with direct GPR 2
XORB reg, #data8 Bitwise XOR immediate byte data with direct register 4
XORB reg, mem Bitwise XOR direct byte memory with direct register 4
XORB mem, reg Bitwise XOR direct byte register with direct memory 4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 26

Boolean Bit Manipulation Operations

BCLR bitaddr Clear direct bit 2
BSET bitaddr Set direct bit 2
BMOV bitaddr, bitaddr Move direct bit to direct bit 4
BMOVN bitaddr, bitaddr Move negated direct bit to direct bit 4
BAND bitaddr, bitaddr AND direct bit with direct bit 4
BOR bitaddr, bitaddr OR direct bit with direct bit 4
BXOR bitaddr, bitaddr XOR direct bit with direct bit 4
BCMP bitaddr, bitaddr Compare direct bit to direct bit 4
BFLDH bitoff, #mask8,

#data8

Bitwise modify masked high byte of bit-addressable
direct word memory with immediate data

4

BFLDL bitoff, #mask8,

#data8

Bitwise modify masked low byte of bit-addressable
direct word memory with immediate data

4

CMP Rw, Rw Compare direct word GPR to direct GPR 2
CMP Rw, [Rw] Compare indirect word memory to direct GPR 2
CMP Rw, [Rw +] Compare indirect word memory to direct GPR and

post-increment source pointer by 2

2

CMP Rw, #data3 Compare immediate word data to direct GPR 2
CMP reg, #data16 Compare immediate word data to direct register 4
CMP reg, mem Compare direct word memory to direct register 4
CMPB Rb, Rb Compare direct byte GPR to direct GPR 2
CMPB Rb, [Rw] Compare indirect byte memory to direct GPR 2
CMPB Rb, [Rw +] Compare indirect byte memory to direct GPR and

post-increment source pointer by 1

2

CMPB Rb, #data3 Compare immediate byte data to direct GPR 2
CMPB reg, #data8 Compare immediate byte data to direct register 4
CMPB reg, mem Compare direct byte memory to direct register 4

Compare and Loop Control Instructions

CMPD1 Rw, #data4 Compare immediate word data to direct GPR and

decrement GPR by 1

2

CMPD1 Rw, #data16 Compare immediate word data to direct GPR and

decrement GPR by 1

4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 27

Compare and Loop Control Instructions (cont’d)
CMPD1 Rw, mem Compare direct word memory to direct GPR and

decrement GPR by 1

4

CMPD2 Rw, #data4 Compare immediate word data to direct GPR and

decrement GPR by 2

2

CMPD2 Rw, #data16 Compare immediate word data to direct GPR and

decrement GPR by 2

4

CMPD2 Rw, mem Compare direct word memory to direct GPR and

decrement GPR by 2

4

CMPI1 Rw, #data4 Compare immediate word data to direct GPR and

increment GPR by 1

2

CMPI1 Rw, #data16 Compare immediate word data to direct GPR and

increment GPR by 1

4

CMPI1 Rw, mem Compare direct word memory to direct GPR and

increment GPR by 1

4

CMPI2 Rw, #data4 Compare immediate word data to direct GPR and

increment GPR by 2

2

CMPI2 Rw, #data16 Compare immediate word data to direct GPR and

increment GPR by 2

4

CMPI2 Rw, mem Compare direct word memory to direct GPR and

increment GPR by 2

4

Prioritize Instruction

PRIOR Rw, Rw Determine number of shift cycles to normalize direct

word GPR and store result in direct word GPR

2

Shift and Rotate Instructions

SHL Rw, Rw Shift left direct word GPR;

number of shift cycles specified by direct GPR

2

SHL Rw, #data4 Shift left direct word GPR;

number of shift cycles specified by immediate data

2

SHR Rw, Rw Shift right direct word GPR;

number of shift cycles specified by direct GPR

2

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 28

Shift and Rotate Instructions (cont’d)
SHR Rw, #data4 Shift right direct word GPR;

number of shift cycles specified by immediate data

2

ROL Rw, Rw Rotate left direct word GPR;

number of shift cycles specified by direct GPR

2

ROL Rw, #data4 Rotate left direct word GPR;

number of shift cycles specified by immediate data

2

ROR Rw, Rw Rotate right direct word GPR;

number of shift cycles specified by direct GPR

2

ROR Rw, #data4 Rotate right direct word GPR;

number of shift cycles specified by immediate data

2

ASHR Rw, Rw Arithmetic (sign bit) shift right direct word GPR;

number of shift cycles specified by direct GPR

2

ASHR Rw, #data4 Arithmetic (sign bit) shift right direct word GPR;

number of shift cycles specified by immediate data

2

Data Movement

MOV Rw, Rw Move direct word GPR to direct GPR 2
MOV Rw, #data4 Move immediate word data to direct GPR 2
MOV reg, #data16 Move immediate word data to direct register 4
MOV Rw, [Rw] Move indirect word memory to direct GPR 2
MOV Rw, [Rw+] Move indirect word memory to direct GPR and

post-increment source pointer by 2

2

MOV [Rw], Rw Move direct word GPR to indirect memory 2
MOV [-Rw], Rw Pre-decrement destination pointer by 2 and move direct

word GPR to indirect memory

2

MOV [Rw], [Rw] Move indirect word memory to indirect memory 2
MOV [Rw+], [Rw] Move indirect word memory to indirect memory and

post-increment destination pointer by 2

2

MOV [Rw], [Rw+] Move indirect word memory to indirect memory and

post-increment source pointer by 2

2

MOV Rw,

[Rw + #data16]

Move indirect word memory by base plus constant to
direct GPR

4

MOV [Rw + #data16],RwMove direct word GPR to indirect memory by base plus

constant

4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 29

Data Movement (cont’d)
MOV [Rw], mem Move direct word memory to indirect memory 4

MOV mem, [Rw] Move indirect word memory to direct memory 4
MOV reg, mem Move direct word memory to direct register 4
MOV mem, reg Move direct word register to direct memory 4
MOVB Rb, Rb Move direct byte GPR to direct GPR 2
MOVB Rb, #data4 Move immediate byte data to direct GPR 2
MOVB reg, #data8 Move immediate byte data to direct register 4
MOVB Rb, [Rw] Move indirect byte memory to direct GPR 2
MOVB Rb, [Rw +] Move indirect byte memory to direct GPR and

post-increment source pointer by 1

2

MOVB [Rw], Rb Move direct byte GPR to indirect memory 2
MOVB [-Rw], Rb Pre-decrement destination pointer by 1 and move

direct byte GPR to indirect memory

2

MOVB [Rw], [Rw] Move indirect byte memory to indirect memory 2
MOVB [Rw +], [Rw] Move indirect byte memory to indirect memory and

post-increment destination pointer by 1

2

MOVB [Rw], [Rw +] Move indirect byte memory to indirect memory and

post-increment source pointer by 1

2

MOVB Rb,

[Rw + #data16]

Move indirect byte memory by base plus constant to
direct GPR

4

MOVB [Rw + #data16],RbMove direct byte GPR to indirect memory by base plus

constant

4

MOVB [Rw], mem Move direct byte memory to indirect memory 4
MOVB mem, [Rw] Move indirect byte memory to direct memory 4
MOVB reg, mem Move direct byte memory to direct register 4
MOVB mem, reg Move direct byte register to direct memory 4
MOVBS Rw, Rb Move direct byte GPR with sign extension to direct

word GPR

2

MOVBS reg, mem Move direct byte memory with sign extension to direct

word register

4

MOVBS mem, reg Move direct byte register with sign extension to direct

word memory

4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 30

Data Movement (cont’d)
MOVBZ Rw, Rb Move direct byte GPR with zero extension to direct

word GPR

2

MOVBZ reg, mem Move direct byte memory with zero extension to direct

word register

4

MOVBZ mem, reg Move direct byte register with zero extension to direct

word memory

4

Jump and Call Operations

JMPA cc, caddr Jump absolute if condition is met 4
JMPI cc, [Rw] Jump indirect if condition is met 2
JMPR cc, rel Jump relative if condition is met 2
JMPS seg, caddr Jump absolute to a code segment 4
JB bitaddr, rel Jump relative if direct bit is set 4
JBC bitaddr, rel Jump relative and clear bit if direct bit is set 4
JNB bitaddr, rel Jump relative if direct bit is not set 4
JNBS bitaddr, rel Jump relative and set bit if direct bit is not set 4
CALLA cc, caddr Call absolute subroutine if condition is met 4
CALLI cc, [Rw] Call indirect subroutine if condition is met 2
CALLR rel Call relative subroutine 2
CALLS seg, caddr Call absolute subroutine in any code segment 4
PCALL reg, caddr Push direct word register onto system stack and call

absolute subroutine

4

TRAP #trap7 Call interrupt service routine via immediate trap number 2

System Stack Operations

POP reg Pop direct word register from system stack 2
PUSH reg Push direct word register onto system stack 2
SCXT reg, #data16 Push direct word register onto system stack und update

register with immediate data

4

SCXT reg, mem Push direct word register onto system stack und update

register with direct memory

4

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 31

Return Operations

RET Return from intra-segment subroutine 2
RETS Return from inter-segment subroutine 2
RETP reg Return from intra-segment subroutine and pop direct

word register from system stack

2

RETI Return from interrupt service subroutine 2

System Control

SRST Software Reset 4
IDLE Enter Idle Mode 4
PWRDN Enter Power Down Mode

(supposes

NMI-pin being low)

4

SRVWDT Service Watchdog Timer 4
DISWDT Disable Watchdog Timer 4
EINIT Signify End-of-Initialization on RSTOUT-pin 4

Miscellaneous

NOP Null operation 2

Instruction Set Summary (cont’d)
Mnemonic Description Bytes

SAB 80C166W/83C166W

Semiconductor Group 32

Instruction Set Summary Notes

Data Addressing Modes

Rw: – Word GPR (R0, R1, … , R15)
Rb: – Byte GPR (RL0, RH0, …, RL7, RH7)
reg: – SFR or GPR

(in case of a byte operation on an SFR, only the low byte can be accessed via ‘reg’)
mem: – Direct word or byte memory location
[…]: – Indirect word or byte memory location

(Any word GPR can be used as indirect address pointer, except for the arithmetic,

logical and compare instructions, where only R0 to R3 are allowed)
bitaddr: – Direct bit in the bit-addressable memory area
bitoff: – Direct word in the bit-addressable memory area
#data: – Immediate constant

(The number of significant bits which can be specified by the user is represented by

the respective appendix ’x’)
#mask8: – Immediate 8-bit mask used for bit-field modifications

Multiply and Divide Operations

The MDL and MDH registers are implicit source and/or destination operands of the multiply and
divide instructions.

Branch Target Addressing Modes

caddr: – Direct 16-bit jump target address (Updates the Instruction Pointer)
seg: – Direct 2-bit segment address

(Updates the Code Segment Pointer)
rel: – Signed 8-bit jump target word offset address relative to the Instruction Pointer of the

following instruction
#trap7: – Immediate 7-bit trap or interrupt number.

SAB 80C166W/83C166W

Semiconductor Group 33

Branch Condition Codes

cc: Symbolically specifiable condition codes

cc_UC – Unconditional
cc_Z – Zero
cc_NZ – Not Zero
cc_V – Overflow
cc_NV – No Overflow
cc_N – Negative
cc_NN – Not Negative
cc_C – Carry
cc_NC – No Carry
cc_EQ – Equal
cc_NE – Not Equal
cc_ULT – Unsigned Less Than
cc_ULE – Unsigned Less Than or Equal
cc_UGE – Unsigned Greater Than or Equal
cc_UGT – Unsigned Greater Than
cc_SLE – Signed Less Than or Equal
cc_SGE – Signed Greater Than or Equal
cc_SGT – Signed Greater Than
cc_NET – Not Equal and Not End-of-Table

Instruction Op Codes in Hexadecimal Order

The table on the following pages lists the SAB 80C166W/83C166W’s instruction opcodes in a
hexadecimal order. This table allows to find the instruction which is associated with a given opcode.

Semiconductor Group 34

SAB 80C166W/83C166W

Hex­code

Num­ber of
Bytes

Mnemonic Operands

00 2 ADD Rw, Rw
01 2 ADDB Rb, Rb
02 4 ADD reg, mem
03 4 ADDB reg, mem
04 4 ADD mem, reg
05 4 ADDB mem, reg
06 4 ADD reg, #data16
07 4 ADDB reg, #data8
08 2 ADD Rw, [Rw +] or

Rw, [Rw] or
Rw, #data3

1)

09 2 ADDB Rb, [Rw +] or

Rb, [Rw] or
Rb, #data3

1)

0A 4 BFLDL bitoff, #mask8,

#data8
0B 2 MUL Rw, Rw
0C 2 ROL Rw, Rw
0D 2 JMPR cc_UC, rel
0E 2 BCLR bitoff.0
0F 2 BSET bitoff.0
10 2 ADDC Rw, Rw
11 2 ADDCB Rb, Rb
12 4 ADDC reg, mem
13 4 ADDCB reg, mem
14 4 ADDC mem, reg
15 4 ADDCB mem, reg
16 4 ADDC reg, #data16
17 4 ADDCB reg, #data8
18 2 ADDC Rw, [Rw +] or

Rw, [Rw] or

Rw, #data3

1)

19 2 ADDCB Rb, [Rw +] or

Rb, [Rw] or
Rb, #data3

1)

1A 4 BFLDH bitoff, #mask8,

#data8
1B 2 MULU Rw, Rw
1C 2 ROL Rw, #data4
1D 2 JMPR cc_NET, rel
1E 2 BCLR bitoff.1
1F 2 BSET bitoff.1
20 2 SUB Rw, Rw
21 2 SUBB Rb, Rb
22 4 SUB reg, mem
23 4 SUBB reg, mem
24 4 SUB mem, reg
25 4 SUBB mem, reg
26 4 SUB reg, #data6
27 4 SUBB reg, #data8
28 2 SUB Rw, [Rw +] or

Rw, [Rw] or

Rw, #data3

1)

29 2 SUBB Rb, [Rw +] or

Rb, [Rw] or

Rb, #data3

1)

2A 4 BCMP bitaddr, bitaddr
2B 2 PRIOR Rw, Rw
2C 2 ROR Rw, Rw
2D 2 JMPR cc_EQ, rel or

cc_Z, rel
2E 2 BCLR bitoff.2
2F 2 BSET bitoff.2
30 2 SUBC Rw, Rw
31 2 SUBCB Rb, Rb
32 4 SUBC reg, mem

Hex­code

Num­ber of
Bytes

Mnemonic Operands

Semiconductor Group 35

SAB 80C166W/83C166W

33 4 SUBCB reg, mem
34 4 SUBC mem, reg
35 4 SUBCB mem, reg
36 4 SUBC reg, #data16
37 4 SUBCB reg, #data8
38 2 SUBC Rw, [Rw +] or

Rw, [Rw] or
Rw, #data3

1)

39 2 SUBCB Rb, [Rw +] or

Rb, [Rw] or
Rb, #data3

1)

3A 4 BMOVN bitaddr, bitaddr
3B - - ­3C 2 ROR Rw, #data4
3D 2 JMPR cc_NE, rel or

cc_NZ, rel
3E 2 BCLR bitoff.3
3F 2 BSET bitoff.3
40 2 CMP Rw, Rw
41 2 CMPB Rb, Rb
42 4 CMP reg, mem
43 4 CMPB reg, mem
44 - - ­45 - - ­46 4 CMP reg, #data16
47 4 CMPB reg, #data8
48 2 CMP Rw, [Rw +] or

Rw, [Rw] or

Rw, #data3

1)

49 2 CMPB Rb, [Rw +] or

Rb, [Rw] or

Rb, #data3

1)

4A 4 BMOV bitaddr, bitaddr
4B 2 DIV Rw

Hex­code

Num­ber of
Bytes

Mnemonic Operands

4C 2 SHL Rw, Rw
4D 2 JMPR cc_V, rel
4E 2 BCLR bitoff.4
4F 2 BSET bitoff.4
50 2 XOR Rw, Rw
51 2 XORB Rb, Rb
52 4 XOR reg, mem
53 4 XORB reg, mem
54 4 XOR mem, reg
55 4 XORB mem, reg
56 4 XOR reg, #data16
57 4 XORB reg, #data8
58 2 XOR Rw, [Rw +] or

Rw, [Rw] or
Rw, #data3

1)

59 2 XORB Rb, [Rw +] or

Rb, [Rw] or
Rb, #data3

1)

5A 4 BOR bitaddr, bitaddr
5B 2 DIVU Rw
5C 2 SHL Rw, #data4
5D 2 JMPR cc_NV, rel
5E 2 BCLR bitoff.5
5F 2 BSET bitoff.5
60 2 AND Rw, Rw
61 2 ANDB Rb, Rb
62 4 AND reg, mem
63 4 ANDB reg, mem
64 4 AND mem, reg
65 4 ANDB mem, reg
66 4 AND reg, #data16
67 4 ANDB reg, #data8

Hex­code

Num­ber of
Bytes

Mnemonic Operands

Semiconductor Group 36

SAB 80C166W/83C166W

68 2 AND Rw, [Rw +] or

Rw, [Rw] or

Rw, #data3

1)

69 2 ANDB Rb, [Rw +] or

Rb, [Rw] or

Rb, #data3

1)

6A 4 BAND bitaddr, bitaddr
6B 2 DIVL Rw
6C 2 SHR Rw, Rw
6D 2 JMPR cc_N, rel
6E 2 BCLR bitoff.6
6F 2 BSET bitoff.6
70 2 OR Rw, Rw
71 2 ORB Rb, Rb
72 4 OR reg, mem
73 4 ORB reg, mem
74 4 OR mem, reg
75 4 ORB mem, reg
76 4 OR reg, #data16
77 4 ORB reg, #data8
78 2 OR Rw, [Rw +] or

Rw, [Rw] or

Rw, #data3

1)

79 2 ORB Rb, [Rw +] or

Rb, [Rw] or

Rb, #data3

1)

7A 4 BXOR bitaddr, bitaddr
7B 2 DIVLU Rw
7C 2 SHR Rw, #data4
7D 2 JMPR cc_NN, rel
7E 2 BCLR bitoff.7
7F 2 BSET bitoff.7
80 2 CMPI1 Rw, #data4
81 2 NEG Rw

Hex­code

Num­ber of
Bytes

Mnemonic Operands

82 4 CMPI1 Rw, mem
83 - - ­84 4 MOV [Rw], mem
85 - - ­86 4 CMPI1 Rw, #data16
87 4 IDLE
88 2 MOV [-Rw], Rw
89 2 MOVB [-Rw], Rb
8A 4 JB bitaddr, rel
8B - - ­8C - - ­8D 2 JMPR cc_C, rel or

cc_ULT, rel
8E 2 BCLR bitoff.8
8F 2 BSET bitoff.8
90 2 CMPI2 Rw, #data4
91 2 CPL Rw
92 4 CMPI2 Rw, mem
93 - - ­94 4 MOV mem, [Rw]
95 - - ­96 4 CMPI2 Rw, #data16
97 4 PWRDN
98 2 MOV Rw, [Rw+]
99 2 MOVB Rb, [Rw+]
9A 4 JNB bitaddr, rel
9B 2 TRAP #trap7
9C 2 JMPI cc, [Rw]
9D 2 JMPR cc_NC, rel or

cc_UGE, rel
9E 2 BCLR bitoff.9
9F 2 BSET bitoff.9
A0 2 CMPD1 Rw, #data4

Hex­code

Num­ber of
Bytes

Mnemonic Operands

Semiconductor Group 37

SAB 80C166W/83C166W

A1 2 NEGB Rb
A2 4 CMPD1 Rw, mem
A3 - - ­A4 4 MOVB [Rw], mem
A5 4 DISWDT
A6 4 CMPD1 Rw, #data16
A7 4 SRVWDT
A8 2 MOV Rw, [Rw]
A9 2 MOVB Rb, [Rw]
AA 4 JBC bitaddr, rel
AB 2 CALLI cc, [Rw]
AC 2 ASHR Rw, Rw
AD 2 JMPR cc_SGT, rel
AE 2 BCLR bitoff.10
AF 2 BSET bitoff.10
B0 2 CMPD2 Rw, #data4
B1 2 CPLB Rb
B2 4 CMPD2 Rw, mem
B3 - - ­B4 4 MOVB mem, [Rw]
B5 4 EINIT
B6 4 CMPD2 Rw, #data16
B7 4 SRST
B8 2 MOV [Rw], Rw
B9 2 MOVB [Rw], Rb
BA 4 JNBS bitaddr, rel
BB 2 CALLR rel
BC 2 ASHR Rw, #data4
BD 2 JMPR cc_SLE, rel
BE 2 BCLR bitoff.11
BF 2 BSET bitoff.11
C0 2 MOVBZ Rw, Rb

Hex­code

Num­ber of
Bytes

Mnemonic Operands

C1 - - ­C2 4 MOVBZ reg, mem
C3 - - ­C4 4 MOV [Rw +

#data16],

Rw
C5 4 MOVBZ mem, reg
C6 4 SCXT reg, #data16
C7 - - ­C8 2 MOV [Rw], [Rw]
C9 2 MOVB [Rw], [Rw]
CA 4 CALLA cc, addr
CB 2 RET
CC 2 NOP
CD 2 JMPR cc_SLT, rel
CE 2 BCLR bitoff.12
CF 2 BSET bitoff.12
D0 2 MOVBS Rw, Rb
D1 - - ­D2 4 MOVBS reg, mem
D3 - - ­D4 4 MOV reg, mem
D5 4 MOVBS mem, reg
D6 4 SCXT reg, mem
D7 - - ­D8 2 MOV [Rw+], [Rw]
D9 2 MOVB [Rw+], [Rw]
DA 4 CALLS seg, caddr
DB 2 RETS
DC - - ­DD 2 JMPR cc_SGE, rel
DE 2 BCLR bitoff.13
DF 2 BSET bitoff.13

Hex­code

Num­ber of
Bytes

Mnemonic Operands

Semiconductor Group 38

SAB 80C166W/83C166W

E0 2 MOV Rw, #data4
E1 2 MOVB Rb, #data4
E2 4 PCALL reg, caddr
E3 - - ­E4 4 MOVB [Rw +

#data16],

Rb
E5 - - ­E6 4 MOV reg, #data16
E7 4 MOVB reg, #data8
E8 2 MOV [Rw], [Rw+]
E9 2 MOVB [Rw], [Rw+]
EA 4 JMPA cc, caddr
EB 2 RETP reg
EC 2 PUSH reg
ED 2 JMPR cc_UGT, rel
EE 2 BCLR bitoff.14
EF 2 BSET bitoff.14
F0 2 MOV Rw, Rw
F1 2 MOVB Rb, Rb
F2 4 MOV reg, mem
F3 4 MOVB reg, mem
F4 4 MOVB Rb,

[Rw + #data16]
F5 - - ­F6 4 MOV mem, reg
F7 4 MOVB mem, reg
F8 - - ­F9 - - ­FA 4 JMPS seg, caddr
FB 2 RETI
FC 2 POP reg
FD 2 JMPR cc_ULE, rel

Hex­code

Num­ber of
Bytes

Mnemonic Operands

FE 2 BCLR bitoff.15
FF 2 BSET bitoff.15

Hex­code

Num­ber of
Bytes

Mnemonic Operands

SAB 80C166W/83C166W

Semiconductor Group 39

Notes

1) These instructions are encoded by means of additional bits in the operand field of the

instruction
x0H – x7H: Rw, #data3 or Rb, #data3

x8H – xBH: Rw, [Rw] or Rb, [Rw]
xCH – xFH: Rw, [Rw +] or Rb, [Rw +]

For these instructions only the lowest four GPRs, R0 to R3, can be used as indirect address
pointers.

Notes on the JMPR Instructions

The condition code to be tested for the JMPR instructions is specified by the opcode.
Two mnemonic representation alternatives exist for some of the condition codes.

Notes on the BCLR and BSET Instructions

The position of the bit to be set or to be cleared is specified by the opcode. The operand
‘bitoff.n’ (n = 0 to 15) refers to a particular bit within a bit-addressable word.

Notes on the Undefined Opcodes

A hardware trap occurs when one of the undefined opcodes signified by ‘----’ is decoded by
the CPU.

SAB 80C166W/83C166W

Semiconductor Group 40

Special Function Registers Overview

The following table lists all SFRs which are implemented in the SAB 80C166W/83C166W in
alphabetical order. Bit-addressable SFRs are marked with the letter “b” in column “Name”.

An SFR can be specified via its individual mnemonic name. Depending on the selected addressing
mode, an SFR can be accessed via its physical address (using the Data Page Pointers), or via its
short 8-bit address (without using the Data Page Pointers).

Special Function Registers Overview
Name Physical

Address

8-Bit
Address

Description Reset

Value

ADCIC b FF98

H

CC

H

A/D Converter End of Conversion Interrupt
Control Register

0000

H

ADCON b FFA0

H

D0

H

A/D Converter Control Register 0000

H

ADDAT FEA0

H

50

H

A/D Converter Result Register 0000

H

ADDRSEL1 FE18

H

0C

H

Address Select Register 1 0000

H

ADEIC b FF9A

H

CD

H

A/D Converter Overrun Error Interrupt Control
Register

0000

H

BUSCON1 b FF14

H

8A

H

Bus Configuration Register 1 0000

H

CAPREL FE4A

H

25

H

GPT2 Capture/Reload Register 0000

H

CC0 FE80

H

40

H

CAPCOM Register 0 0000

H

CC0IC b FF78

H

BC

H

CAPCOM Register 0 Interrupt Control Register 0000

H

CC1 FE82

H

41

H

CAPCOM Register 1 0000

H

CC1IC b FF7A

H

BD

H

CAPCOM Register 1 Interrupt Control Register 0000

H

CC2 FE84

H

42

H

CAPCOM Register 2 0000

H

CC2IC b FF7C

H

BE

H

CAPCOM Register 2 Interrupt Control Register 0000

H

CC3 FE86

H

43

H

CAPCOM Register 3 0000

H

CC3IC b FF7E

H

BF

H

CAPCOM Register 3 Interrupt Control Register 0000

H

CC4 FE88

H

44

H

CAPCOM Register 4 0000

H

CC4IC b FF80

H

C0

H

CAPCOM Register 4 Interrupt Control Register 0000

H

CC5 FE8A

H

45

H

CAPCOM Register 5 0000

H

CC5IC b FF82

H

C1

H

CAPCOM Register 5 Interrupt Control Register 0000

H

CC6 FE8C

H

46

H

CAPCOM Register 6 0000

H

CC6IC b FF84

H

C2

H

CAPCOM Register 6 Interrupt Control Register 0000

H

CC7 FE8E

H

47

H

CAPCOM Register 7 0000

H

SAB 80C166W/83C166W

Semiconductor Group 41

CC7IC b FF86

H

C3

H

CAPCOM Register 7 Interrupt Control Register 0000

H

CC8 FE90

H

48

H

CAPCOM Register 8 0000

H

CC8IC b FF88

H

C4

H

CAPCOM Register 8 Interrupt Control Register 0000

H

CC9 FE92

H

49

H

CAPCOM Register 9 0000

H

CC9IC b FF8A

H

C5

H

CAPCOM Register 9 Interrupt Control Register 0000

H

CC10 FE94

H

4A

H

CAPCOM Register 10 0000

H

CC10IC b FF8C

H

C6

H

CAPCOM Register 10 Interrupt Control Register 0000

H

CC11 FE96

H

4B

H

CAPCOM Register 11 0000

H

CC11IC b FF8E

H

C7

H

CAPCOM Register 11 Interrupt Control Register 0000

H

CC12 FE98

H

4C

H

CAPCOM Register 12 0000

H

CC12IC b FF90

H

C8

H

CAPCOM Register 12 Interrupt Control Register 0000

H

CC13 FE9A

H

4D

H

CAPCOM Register 13 0000

H

CC13IC b FF92

H

C9

H

CAPCOM Register 13 Interrupt Control Register 0000

H

CC14 FE9C

H

4E

H

CAPCOM Register 14 0000

H

CC14IC b FF94

H

CA

H

CAPCOM Register 14 Interrupt Control Register 0000

H

CC15 FE9E

H

4F

H

CAPCOM Register 15 0000

H

CC15IC b FF96

H

CB

H

CAPCOM Register 15 Interrupt Control Register 0000

H

CCM0 b FF52

H

A9

H

CAPCOM Mode Control Register 0 0000

H

CCM1 b FF54

H

AA

H

CAPCOM Mode Control Register 1 0000

H

CCM2 b FF56

H

AB

H

CAPCOM Mode Control Register 2 0000

H

CCM3 b FF58

H

AC

H

CAPCOM Mode Control Register 3 0000

H

CP FE10

H

08

H

CPU Context Pointer Register FC00

H

CRIC b FF6A

H

B5

H

GPT2 CAPREL Interrupt Control Register 0000

H

CSP FE08

H

04

H

CPU Code Segment Pointer Register
(2 bits, read only)

0000

H

DP0 b FF02

H

81

H

Port 0 Direction Control Register 0000

H

DP1 b FF06

H

83

H

Port 1 Direction Control Register 0000

H

DP2 b FFC2

H

E1

H

Port 2 Direction Control Register 0000

H

DP3 b FFC6

H

E3

H

Port 3 Direction Control Register 0000

H

DP4 b FF0A

H

85

H

Port 4 Direction Control Register (2 bits) 00

H

Special Function Registers Overview (cont’d)
Name Physical

Address

8-Bit
Address

Description Reset

Value

SAB 80C166W/83C166W

Semiconductor Group 42

DPP0 FE00

H

00

H

CPU Data Page Pointer 0 Register (4 bits) 0000

H

DPP1 FE02

H

01

H

CPU Data Page Pointer 1 Register (4 bits) 0001

H

DPP2 FE04

H

02

H

CPU Data Page Pointer 2 Register (4 bits) 0002

H

DPP3 FE06

H

03

H

CPU Data Page Pointer 3 Register (4 bits) 0003

H

MDC b FF0E

H

87

H

CPU Multiply / Divide Control Register 0000

H

MDH FE0C

H

06

H

CPU Multiply / Divide Register – High Word 0000

H

MDL FE0E

H

07

H

CPU Multiply / Divide Register – Low Word 0000

H

ONES FF1E

H

8F

H

Constant Value 1’s Register (read only) FFFF

H

P0 b FF00

H

80

H

Port 0 Register 0000

H

P1 b FF04

H

82

H

Port 1 Register 0000

H

P2 b FFC0

H

E0

H

Port 2 Register 0000

H

P3 b FFC4

H

E2

H

Port 3 Register 0000

H

P4 b FFC8

H

E4

H

Port 4 Register (2 bits) 00

H

P5 b FFA2

H

D1

H

Port 5 Register (read only) XXXX

H

PECC0 FEC0

H

60

H

PEC Channel 0 Control Register 0000

H

PECC1 FEC2

H

61

H

PEC Channel 1 Control Register 0000

H

PECC2 FEC4

H

62

H

PEC Channel 2 Control Register 0000

H

PECC3 FEC6

H

63

H

PEC Channel 3 Control Register 0000

H

PECC4 FEC8

H

64

H

PEC Channel 4 Control Register 0000

H

PECC5 FECA

H

65

H

PEC Channel 5 Control Register 0000

H

PECC6 FECC

H

66

H

PEC Channel 6 Control Register 0000

H

PECC7 FECE

H

67

H

PEC Channel 7 Control Register 0000

H

PSW b FF10

H

88

H

CPU Program Status Word 0000

H

S0BG FEB4

H

5A

H

Serial Channel 0 Baud Rate Generator Reload
Register

0000

H

S0CON b FFB0

H

D8

H

Serial Channel 0 Control Register 0000

H

S0EIC b FF70

H

B8

H

Serial Channel 0 Error Interrupt Control Register 0000

H

S0RBUF FEB2

H

59

H

Serial Channel 0 Receive Buffer Register
(read only)

XX

H

Special Function Registers Overview (cont’d)
Name Physical

Address

8-Bit
Address

Description Reset

Value

SAB 80C166W/83C166W

Semiconductor Group 43

S0RIC b FF6E

H

B7

H

Serial Channel 0 Receive Interrupt Control
Register

0000

H

S0TBUF FEB0

H

58

H

Serial Channel 0 Transmit Buffer Register
(write only)

00

H

S0TIC b FF6C

H

B6

H

Serial Channel 0 Transmit Interrupt Control
Register

0000

H

S1BG FEBC

H

5E

H

Serial Channel 1 Baud Rate Generator Reload
Register

0000

H

S1CON b FFB8

H

DC

H

Serial Channel 1 Control Register 0000

H

S1EIC b FF76

H

BB

H

Serial Channel 1 Error Interrupt Control Register 0000

H

S1RBUF FEBA

H

5D

H

Serial Channel 1 Receive Buffer Register
(read only)

XX

H

S1RIC b FF74

H

BA

H

Serial Channel 1 Receive Interrupt Control
Register

0000

H

S1TBUF FEB8

H

5C

H

Serial Channel 1 Transmit Buffer Register
(write only)

00

H

S1TIC b FF72

H

B9

H

Serial Channel 1 Transmit Interrupt Control
Register

0000

H

SP FE12

H

09

H

CPU System Stack Pointer Register FC00

H

STKOV FE14

H

0A

H

CPU Stack Overflow Pointer Register FA00

H

STKUN FE16

H

0B

H

CPU Stack Underflow Pointer Register FC00

H

SYSCON b FF0C

H

86

H

CPU System Configuration Register 0xx0H*)

T0 FE50

H

28

H

CAPCOM Timer 0 Register 0000

H

T01CON b FF50

H

A8

H

CAPCOM Timer 0 and Timer 1 Control Register 0000

H

T0IC b FF9C

H

CE

H

CAPCOM Timer 0 Interrupt Control Register 0000

H

T0REL FE54

H

2A

H

CAPCOM Timer 0 Reload Register 0000

H

T1 FE52

H

29

H

CAPCOM Timer 1 Register 0000

H

T1IC b FF9E

H

CF

H

CAPCOM Timer 1 Interrupt Control Register 0000

H

T1REL FE56

H

2B

H

CAPCOM Timer 1 Reload Register 0000

H

T2 FE40

H

20

H

GPT1 Timer 2 Register 0000

H

T2CON b FF40

H

A0

H

GPT1 Timer 2 Control Register 0000

H

T2IC b FF60

H

B0

H

GPT1 Timer 2 Interrupt Control Register 0000

H

Special Function Registers Overview (cont’d)
Name Physical

Address

8-Bit
Address

Description Reset

Value

SAB 80C166W/83C166W

Semiconductor Group 44

*) The system configuration is selected during reset.

T3 FE42

H

21

H

GPT1 Timer 3 Register 0000

H

T3CON b FF42

H

A1

H

GPT1 Timer 3 Control Register 0000

H

T3IC b FF62

H

B1

H

GPT1 Timer 3 Interrupt Control Register 0000

H

T4 FE44

H

22

H

GPT1 Timer 4 Register 0000

H

T4CON b FF44

H

A2

H

GPT1 Timer 4 Control Register 0000

H

T4IC b FF64

H

B2

H

GPT1 Timer 4 Interrupt Control Register 0000

H

T5 FE46

H

23

H

GPT2 Timer 5 Register 0000

H

T5CON b FF46

H

A3

H

GPT2 Timer 5 Control Register 0000

H

T5IC b FF66

H

B3

H

GPT2 Timer 5 Interrupt Control Register 0000

H

T6 FE48

H

24

H

GPT2 Timer 6 Register 0000

H

T6CON b FF48

H

A4

H

GPT2 Timer 6 Control Register 0000

H

T6IC b FF68

H

B4

H

GPT2 Timer 6 Interrupt Control Register 0000

H

TFR b FFAC

H

D6

H

Trap Flag Register 0000

H

WDT FEAE

H

57

H

Watchdog Timer Register (read only) 0000

H

WDTCON FFAE

H

D7

H

Watchdog Timer Control Register 0000

H

ZEROS b FF1C

H

8E

H

Constant Value 0’s Register (read only) 0000

H

Special Function Registers Overview (cont’d)
Name Physical

Address

8-Bit
Address

Description Reset

Value

SAB 80C166W/83C166W

Semiconductor Group 45

Absolute Maximum Ratings

Ambient temperature under bias (TA):

SAB 83C166W-5M, SAB 80C166W-M...........................................................................0 to + 70 ˚C

SAB 83C166W-5M-T3, SAB 80C166W-M-T3 ...........................................................– 40 to + 85 ˚C

SAB 83C166W-5M-T4, SAB 80C166W-M-T4 .........................................................– 40 to + 110 ˚C

Storage temperature (T

stg

) ....................................................................................... – 65 to + 150 ˚C

Voltage on VCC pins with respect to ground (VSS) ..................................................... – 0.5 to + 6.5 V

Voltage on any pin with respect to ground (VSS).................................................– 0.5 to VCC + 0.5 V

Input current on any pin during overload condition..................................................– 10 to + 10 mA

Absolute sum of all input currents during overload condition ............................................. |100 mA|

Power dissipation........................................................................................................................ 1 W

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (VIN > VCC or VIN < VSS) the
voltage on pins with respect to ground (VSS) must not exceed the values defined by the
Absolute Maximum Ratings.

Parameter Interpretation

The parameters listed in the following partly represent the characteristics of the SAB 80C166W/
83C166W and partly its demands on the system. To aid in interpreting the parameters right, when
evaluating them for a design, they are marked in column “Symbol”:

CC (Controller Characteristics):
The logic of the SAB 80C166W/83C166W will provide signals with the respective timing
characteristics.

SR (System Requirement):
The external system must provide signals with the respective timing characteristics to the SAB
80C166W/83C166W.

SAB 80C166W/83C166W

Semiconductor Group 46

DC Characteristics

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

Parameter Symbol Limit Values Unit Test Condition

min. max.

Input low voltage

V

IL

SR – 0.5 0.2 V

CC

– 0.1

V–

Input high voltage
(all except

RSTIN and XTAL1)

V

IH

SR 0.2 V

CC

+ 0.9

V

CC

+ 0.5 V –

Input high voltage

RSTIN V

IH1

SR 0.6 V

CC

V

CC

+ 0.5 V –

Input high voltage XTAL1

V

IH2

SR 0.7 V

CC

V

CC

+ 0.5 V –

Output low voltage
(Port 0, Port 1, Port 4, ALE,

RD,

WR, BHE, CLKOUT, RSTOUT)

V

OL

CC – 0.45 V IOL = 2.4 mA

Output low voltage
(all other outputs)

V

OL1

CC – 0.45 V I

OL1

= 1.6 mA

Output high voltage
(Port 0, Port 1, Port 4, ALE,

RD,

WR, BHE, CLKOUT, RSTOUT)

V

OH

CC 0.9 V

CC

2.4

–VI

OH

= – 500 µA

I

OH

= – 2.4 mA

Output high voltage
(all other outputs)

V

OH1

CC 0.9 V

CC

2.4

–V

V

I

OH

= – 250 µA

I

OH

= – 1.6 mA

Input leakage current

1)

I

OZ

CC – ± 1 µA 0 V < VIN < V

CC

RSTIN pullup resistor R

RST

CC 50 150 kΩ –

Read inactive current

5)

I

RH

3)

– – 40 µA V

OUT

= V

OHmin

Read active current

5)

I

RL

4)

– 500 – µA V

OUT

= V

OLmax

ALE inactive current

5)

I

ALEL

3)

– 150 µA V

OUT

= V

OLmax

ALE active current

5)

I

ALEH

4)

2100 – µA V

OUT

= V

OHmin

XTAL1 input current I

IL

CC – ± 20 µA 0 V < VIN < V

CC

Pin capacitance

6)

(digital inputs/outputs)

C

IO

CC – 10 pF f = 1 MHz

T

A

= 25 ˚C

Power supply current

I

CC

– 50 +

5 x f

CPU

mA Reset active

f

CPU

in [MHz]

7)

Idle mode supply current I

ID

– 30 +

1.5 x f

CPU

mA f

CPU

in [MHz]

7)

Power-down mode supply current I

PD

–50µAV

CC

= 5.5 V

8)

SAB 80C166W/83C166W

Semiconductor Group 47

Notes

1)

This specification does not apply to the analog input (Port 5.x) which is currently converted.

3)

The maximum current may be drawn while the respective signal line remains inactive.

4)

The minimum current must be drawn in order to drive the respective signal line active.

5)

This specification is only valid during Reset, or during Hold-mode.

6)

Not 100% tested, guaranteed by design characterization.

7)

The supply current is a function of the operating frequency. This dependency is illustrated in the figure below.
These parameters are tested at 20 MHz CPU clock with all outputs open.

8)

This parameter is tested including leakage currents. All inputs (including pins configured as inputs) at 0 V to

0.1 V or at V

CC

– 0.1 V to VCC, V

REF

= 0 V, all outputs (including pins configured as outputs) disconnected.

A voltage of V

CC

≥ 2.5 V is sufficient to retain the content of the internal RAM during power down mode.

Figure 8
Supply/Idle Current as a Function of Operating Frequency

SAB 80C166W/83C166W

Semiconductor Group 48

A/D Converter Characteristics

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

4.0 V ≤ V

AREF

≤ VCC + 0.1 V; VSS – 0.1 V ≤ V

AGND

≤ VSS + 0.2 V

Notes

1)

V

AIN

may exceed V

AGND

or V

AREF

up to the absolute maximum ratings. However, the conversion result in these

cases will be X000

H

or X3FFH, respectively.

2)

During the sample time the input capacitance CI can be charged/discharged by the external source. The
internal resistance of the analog source must allow the capacitors to reach their final voltage level within

t

S

.

After the end of the sample time

t

S

, changes of the analog input voltage have no effect on the conversion result.

The value for the sample clock is

t

SC

= TCL x 32.

3)

This parameter includes the sample time tS, the time for determining the digital result and the time to load the
result register with the conversion result.
The value for the conversion clock is

t

CC

= TCL x 32.

4)

During the conversion the ADC’s capacitance must be repeatedly charged or discharged. The internal
resistance of the respective current source must allow the capacitors to reach their final voltage level within
the indicated time. The maximum internal resistance results from the CPU clock period.

5)

This parameter depends on the ADC control logic. It is not a real maximum value, but rather a fixum.

Parameter Symbol Limit Values Unit Test Condition

min. max.

Analog input voltage range V

AIN

SR V

AGND

V

AREF

V

1)

Sample time t

S

CC – 2 t

SC

2) 5)

Conversion time t

C

CC – 10 tCC +

t

S

+ 4TCL

3) 5)

Total unadjusted error TUE CC – ± 2 LSB V

AREF

= V

CC

V

AGND

= V

SS

Internal resistance of reference
voltage source

R

AREF

CC – tCC / 250

- 0.25

kΩ

t

CC

in [ns]

4)

Internal resistance of analog
source

R

ASRC

CC – tS / 500

- 0.25

kΩ

t

S

in [ns]

4)

SAB 80C166W/83C166W

Semiconductor Group 49

Testing Waveforms

Figure 9
Input Output Waveforms

Figure 10
Float Waveforms

Memory Cycle Variables

The timing tables below use three variables which are derived from registers SYSCON and
BUSCON1 and represent the special characteristics of the programmed memory cycle. The
following table describes, how these variables are to be computed.

Description Symbol Values

ALE Extension

t

A

TCL x <ALECTL>

Memory Cycle Time Waitstates

t

C

2TCL x (15 - <MCTC>)

Memory Tristate Time

t

F

2TCL x (1 - <MTTC>)

AC inputs during testing are driven at 2.4 V for a logic ‘1’ and 0.4 V for a logic ‘0’.
Timing measurements are made at VIHmin for a logic ‘1’ and VIL max for a logic ‘0’.

For timing purposes a port pin is no longer floating when a 100 mV change from load
voltage occurs, but begins to float when a 100 mV change from the loadedVOH/VOL level occurs
(IOH/IOL = 20 mA).

SAB 80C166W/83C166W

Semiconductor Group 50

AC Characteristics
External Clock Drive XTAL1

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

Note: In order to run the SAB 80C166W/83C166W at a CPU clock of 20 MHz the duty cycle of the

oscillator clock must be 0.5, ie. the relation between the oscillator high and low phases must
be 1:1. So the variation of the duty cycle of the oscillator clock limits the maximum operating
speed of the device.
The 16 MHz values in the tables are given as an example for a typical duty cycle variation of
the oscillator clock from 0.4 to 0.6.

Figure 11
External Clock Drive XTAL1

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

Oscillator period T

CLP

SR 62.5 62.5 50 1000 ns

High time

t

CLH

SR 25 – 25 T

CLP-tCLL

ns

Low time

t

CLL

SR 25 – 25 T

CLP-tCLH

ns

Rise time

t

R

SR – 10 – 10 ns

Fall time

t

F

SR – 10 – 10 ns

Oscillator duty cycle DC SR 0.4 0.6 25 / T

CLP

1 - 25 / T

CLP

Clock cycle T

CL

25 37.5 T

CLP

x DC

min

T

CLP

x DC

max

ns

SAB 80C166W/83C166W

Semiconductor Group 51

AC Characteristics (cont’d)
Multiplexed Bus

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to +110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

C

L

(for Port 0, Port 1, Port 4, ALE, RD, WR, BHE, CLKOUT) = 100 pF

ALE cycle time = 6 TCL (150 ns at 20-MHz CPU clock)

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

ALE high time t

5

CC 15 + t

A

–T

CL

min

- 10

+ t

A

–ns

Address setup to ALE

t

6

CC 10 + t

A

–T

CLmi

n

- 15

+ t

A

–ns

Address hold after ALE

t

7

CC 15 + t

A

–T

CLm

in

- 10

+ t

A

–ns

ALE falling edge to

RD,

WR (with RW-delay)

t

8

CC 15 + t

A

–T

CLm

in

- 10

+ t

A

–ns

ALE falling edge to

RD,

WR (no RW-delay)

t

9

CC -10 + t

A

– -10 + t

A

–ns

Address float after

RD,

WR (with RW-delay)

t

10

CC–5–5ns

Address float after

RD,

WR (no RW-delay)

t

11

CC – 42.5 – T

CL

max

+ 5 ns

RD, WR low time
(with RW-delay)

t

12

CC 52.5 + t

C

–T

CLP

- 10

+ t

C

–ns

RD WR low time
(no RW-delay)

t

13

CC 77.5 + t

C

–T

CLP

+ T

CL

min

- 10 + t

C

–ns

RD to valid data in
(with RW-delay)

t

14

SR – 47.5 + t

C

–T

CLP

- 20

+ t

C

ns

RD to valid data in
(no RW-delay)

t

15

SR – 72.5 + t

C

–T

CLP

+ T

CLmin

- 20 + t

C

ns

ALE low to valid data in

t

16

SR – 72.5

+ tA + t

C

–T

CLP

+ T

CL

min

- 20 + t

C

ns

Address to valid data in

t

17

SR – 100

+2tA + t

C

–2T

CLP

- 25

+2tA + t

C

ns

Data hold after

RD

rising edge

t

18

SR0–0–ns

SAB 80C166W/83C166W

Semiconductor Group 52

Data float after RD t

19

SR – 47.5 + t

F

–T

CLP

- 15

+ t

F

ns

Data valid to

WR t

22

CC 47.5 + t

C

–T

CLP

- 15

+ t

C

–ns

Data hold after

WR t

23

CC 47.5 + t

F

–T

CLP

- 15

+ t

F

–ns

ALE rising edge after

RD,

WR

t

25

CC 47.5 + t

F

–T

CLP

- 15

+ t

F

–ns

Address hold after

RD,

WR

t

27

CC 47.5 + t

F

–T

CLP

- 15

+ t

F

–ns

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

SAB 80C166W/83C166W

Semiconductor Group 53

Figure 12-1
External Memory Cycle: Multiplexed Bus, With Read/Write Delay, Normal ALE

BUS

Read Cycle

RD

Data In

Data OutAddress

Address

t

10

Address

ALE

A17-A16

(A15-A8)

BHE

BUS

Write Cycle

WR

t

5

t

16

t

17

t

6

t

7

t

25

t

27

t

18

t

19

t

14

t

12

t

10

t

22

t

23

t

12

t

8

t

8

SAB 80C166W/83C166W

Semiconductor Group 54

Figure 12-2
External Memory Cycle: Multiplexed Bus, With Read/Write Delay, Extended ALE

Data OutAddress

Data InAddress

t

10

Address

ALE

A17-A16

(A15-A8)

BHE

BUS

Read Cycle

RD

BUS

Write Cycle

WR

t

5

t

16

t

17

t

6

t

7

t

25

t

27

t

18

t

19

t

14

t

12

t

10

t

22

t

23

t

12

t

8

t

8

SAB 80C166W/83C166W

Semiconductor Group 55

Figure 12-3
External Memory Cycle: Multiplexed Bus, No Read/Write Delay, Normal ALE

Data OutAddress

Address Data In

Address

ALE

A17-A16

(A15-A8)

BHE

BUS

Read Cycle

RD

BUS

Write Cycle

WR

t

5

t

16

t

17

t

6

t

7

t

25

t

27

t

18

t

19

t

15

t

13

t

22

t

23

t

13

t

9

t

9

t

11

t

11

SAB 80C166W/83C166W

Semiconductor Group 56

Figure 12-4
External Memory Cycle: Multiplexed Bus, No Read/Write Delay, Extended ALE

Data OutAddress

Data InAddress

Address

ALE

A17-A16

(A15-A8)

BHE

BUS

Read Cycle

RD

BUS

Write Cycle

WR

t

5

t

16

t

17

t

6

t

7

t

25

t

27

t

18

t

19

t

15

t

13

t

22

t

23

t

13

t

9

t

9

t

11

t

11

SAB 80C166W/83C166W

Semiconductor Group 57

AC Characteristics (cont’d)
Demultiplexed Bus

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

C

L

(for Port 0, Port 1, Port 4, ALE, RD, WR, BHE, CLKOUT) = 100 pF

ALE cycle time = 4 TCL (100 ns at 20-MHz CPU clock)

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

ALE high time t

5

CC 15 + t

A

–T

CLmin

- 10

+ t

A

–ns

Address setup to ALE

t

6

CC 10 + t

A

–T

CLmin

- 15

+ t

A

–ns

ALE falling edge to

RD,

WR (with RW-delay)

t

8

CC 15 + t

A

–T

CLmin

- 10

+ t

A

–ns

ALE falling edge to

RD,

WR (no RW-delay)

t

9

CC -10 + t

A

– -10

+ t

A

–ns

RD, WR low time
(with RW-delay)

t

12

CC 52.5 + t

C

–T

CLP

- 10

+ t

C

–ns

RD, WR low time
(no RW-delay)

t

13

CC 77.5 + t

C

–T

CLP+TCLmin

- 10 + t

C

–ns

RD to valid data in
(with RW-delay)

t

14

SR – 47.5 + t

C

–T

CLP

- 20

+ t

C

ns

RD to valid data in
(no RW-delay)

t

15

SR – 72.5 + t

C

–T

CLP+TCLmin

- 20 + t

C

ns

ALE low to valid data in

t

16

SR – 72.5

+ tA + t

C

–T

CLP+TCLmin

- 20 + tA + t

C

ns

Address to valid data in

t

17

SR – 100

+2 tA + t

C

–2T

CLP

- 25

+2tA + t

C

ns

Data hold after

RD

rising edge

t

18

SR0–0–ns

Data float after

RD rising

edge (with RW-delay)

t

20

SR – 47.5 + t

F

–T

CLP

- 15

+ t

F

ns

Data float after

RD rising

edge (no RW-delay)

t

21

SR – 15 + t

F

–T

CLmin

- 10

+ t

F

ns

Data valid to

WR t

22

CC 47.5 + t

C

–T

CLP

- 15

+ t

C

–ns

SAB 80C166W/83C166W

Semiconductor Group 58

Data hold after WR t

24

CC 15 + t

F

–T

CL

min

- 10

+ t

F

–ns

ALE rising edge after

RD,

WR

t

26

CC -10 + t

F

– -10

+ t

F

–ns

Address hold after

RD,

WR

t

28

CC 0 + t

F

–0

+ t

F

–ns

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

SAB 80C166W/83C166W

Semiconductor Group 59

Figure 13-1
External Memory Cycle: Demultiplexed Bus, With Read/Write Delay, Normal ALE

Data Out

Data In

Address

ALE

A17-A16

A15-A0

BHE

BUS

(D15-D8)

D7-D0

Read Cycle

RD

Write Cycle

t

5

t

16

t

17

t

6

t

26

t

28

t

18

t

20

t

14

t

12

t

22

t

24

t

12

t

8

t

8

BUS

(D15-D8)

D7-D0

WR

SAB 80C166W/83C166W

Semiconductor Group 60

Figure 13-2
External Memory Cycle: Demultiplexed Bus, With Read/Write Delay, Extended ALE

Data Out

Data In

Address

ALE

A17-A16

A15-A0

BHE

Read Cycle

RD

Write Cycle

t

5

t

16

t

17

t

6

t

26

t

28

t

18

t

20

t

14

t

12

t

22

t

24

t

12

t

8

t

8

BUS

(D15-D8)

D7-D0

BUS

(D15-D8)

D7-D0

WR

SAB 80C166W/83C166W

Semiconductor Group 61

Figure 13-3
External Memory Cycle: Demultiplexed Bus, No Read/Write Delay, Normal ALE

Data Out

Data In

Address

ALE

A17-A16

A15-A0

BHE

Read Cycle

RD

Write Cycle

t

5

t

16

t

17

t

6

t

26

t

28

t

18

t

21

t

15

t

13

t

22

t

24

t

13

t

9

t

9

BUS

(D15-D8)

D7-D0

BUS

(D15-D8)

D7-D0

WR

SAB 80C166W/83C166W

Semiconductor Group 62

Figure 13-4
External Memory Cycle: Demultiplexed Bus, No Read/Write Delay, Extended ALE

Data Out

Data In

Address

ALE

A17-A16

A15-A0

BHE

Read Cycle

RD

Write Cycle

WR

t

5

t

16

t

17

t

6

t

26

t

28

t

18

t

21

t

15

t

13

t

22

t

24

t

13

t

9

t

9

BUS

(D15-D8)

D7-D0

BUS

(D15-D8)

D7-D0

SAB 80C166W/83C166W

Semiconductor Group 63

AC Characteristics (cont’d)
CLKOUT and READY

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

C

L

(for Port 0, Port 1, Port 4, ALE, RD, WR, BHE, CLKOUT) = 100 pF

Notes

1)

These timings are given for test purposes only, in order to assure recognition at a specific clock edge.

2)

Demultiplexed bus is the worst case. For multiplexed bus 2TCL are to be added to the maximum values. This
adds even more time for deactivating

READY.

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

CLKOUT cycle time t

29

CC 62.5 62.5 T

CLP

T

CLP

ns

CLKOUT high time

t

30

CC

15 – T

CLm

in

– 10 – ns

CLKOUT low time

t

31

CC

15 – T

CL

min

– 10 – ns

CLKOUT rise time

t

32

CC–5–5ns

CLKOUT fall time

t

33

CC–5–5ns

CLKOUT rising edge to
ALE falling edge

t

34

CC 0 + t

A

10 + t

A

0 + t

A

10 + t

A

ns

Synchronous

READY

setup time to CLKOUT

t

35

SR 10 – 10 – ns

Synchronous

READY

hold time after CLKOUT

t

36

SR 10 – 10 – ns

Asynchronous

READY

low time

t

37

SR 77.5 – T

CLP

+ 15 – ns

Asynchronous

READY

setup time

1)

t

58

SR

20 – 20 – ns

Asynchronous

READY

hold time

1)

t

59

SR

0–0–ns

Async.

READY hold time
after RD, WR high
(Demultiplexed Bus)

2)

t

60

SR

00

+2

t

A

+ t

F

2)

0T

CL

- 25

+2tA + t

F

2)

ns

SAB 80C166W/83C166W

Semiconductor Group 64

Figure 14
CLKOUT and READY

Notes

1)

Cycle as programmed, including MCTC waitstates (Example shows 0 MCTC WS).

2)

The leading edge of the respective command depends on RW-delay.

3)

READY sampled HIGH at this sampling point generates a READY controlled waitstate,
READY sampled LOW at this sampling point terminates the currently running bus cycle.

4)

READY may be deactivated in response to the trailing (rising) edge of the corresponding command (RD or
WR).

5)

If the Asynchronous READY signal does not fulfill the indicated setup and hold times with respect to CLKOUT
(eg. because CLKOUT is not enabled), it must fulfill

t

37

in order to be safely synchronized. This is guaranteed,

if

READY is removed in reponse to the command (see Note4)).

6)

Multiplexed bus modes have a MUX waitstate added after a bus cycle, and an additional MTTC waitstate may
be inserted here.
For a multiplexed bus with MTTC waitstate this delay is 2 CLKOUT cycles, for a demultiplexed bus without
MTTC waitstate this delay is zero.

7)

The next external bus cycle may start here.

CLKOUT

ALE

t

30

t

34

Sync

READY

t

35

t

36

t

35

t

36

Async

READY

t

58

t

59

t

58

t

59

waitstate

READY

MUX/Tristate

6)

t

32

t

33

t

29

Running cycle

1)

t

31

t

37

3)

3)

5)

Command

RD, WR

t

60

4)

see 6)

2)

7)

3)

3)

SAB 80C166W/83C166W

Semiconductor Group 65

AC Characteristics (cont’d)
External Bus Arbitration

V

CC

= 5 V ± 10 %; VSS = 0 V

T

A

= 0 to + 70 ˚C for SAB 83C166W-5M, SAB 80C166W/83C166W-M

T

A

= – 40 to + 85 ˚C for SAB 83C166W-5M-T3, SAB 80C166W/83C166W-M-T3

T

A

= – 40 to + 110 ˚C for SAB 83C166W-5M-T4, SAB 80C166W/83C166W-M-T4

C

L

(for Port 0, Port 1, Port 4, ALE, RD, WR, BHE, CLKOUT) = 100 pF

Parameter Symbol CPU Clock = 16 MHz

Duty cycle 0.4 to 0.6

Variable CPU Clock
1/T

CLP

= 1 to 20 MHz

Unit

min. max. min. max.

HOLD input setup time
to CLKOUT

t

61

SR 20 – 20 – ns

CLKOUT to

HLDA high

or BREQ low delay

t

62

CC – 50 – 50 ns

CLKOUT to

HLDA low

or BREQ high delay

t

63

CC – 60 – 60 ns

Other signals release

t

66

CC

– 25 – 25 ns

Other signals drive

t

67

CC

– 60 – 60 ns

SAB 80C166W/83C166W

Semiconductor Group 66

Figure 15
External Bus Arbitration, Releasing the Bus

Notes

1)

The SAB 80C166W/83C166W will complete the currently running bus cycle before granting bus access.

2)

This is the first possibility for BREQ to get active.

CLKOUT

HOLD

t

61

HLDA

t

63

Other

Signals

1)

1)

2)

BREQ

t

62

t

66

SAB 80C166W/83C166W

Semiconductor Group 67

Figure 16
External Bus Arbitration, (Regaining the Bus)

Notes

1)

This is the last chance for BREQ to trigger the indicated regain-sequence.
Even if

BREQ is activated earlier, the regain-sequence is initiated by HOLD going high.

Please note that

HOLD may also be deactivated without the SAB 80C166W/83C166W requesting the bus.

2)

The next SAB 80C166W/83C166W driven bus cycle may start here.

CLKOUT

HOLD

HLDA

Other

Signals

t

62

t

67

t

62

1)

2)

t

61

BREQ

t

63

t

62