Siemens CLY2 Datasheet
GaAs FET CLY 2
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D a t a s h e e t
*Power amplifier for mobile phones
*For frequencies up to 3 GHz
6
5
4
*Operating voltage range: 2 to 6 V
* P
at V
=3V, f=1.8GHz typ. 23.5 dBm
* High efficiency better 55 %
3
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
CLY 2 Y2 Q62702-L96 G S D D S G MW 6
. 1 2 3 4 5 6
Pin Configuration
1
2
Package 1)
Maximum ratings Symbol Unit
Drain-source voltage V
Drain-gate voltage V
Gate-source voltage V
Drain current I
Channel temperature T
Storage temperature T
Total power dissipation (T
< 50°C)
S
2)
P
DS
DG
GS
D
Ch
stg
tot
-55...+150 °C
Thermal Resistance
Channel-soldering point
1) Dimensions see chapter Package Outlines
2) TS is measured on the source lead at the soldering point to the pcb.
2)
R
thChS
9V
12 V
-6 V
600 mA
150 °C
900 mW
≤110 K/W
Siemens Aktiengesellschaft pg. 1/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
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Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics Symbol min typ max Unit
Drain-source saturation current
V
DS
= 3 V
= 0 V
V
GS
Drain-source pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Gate pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Pinch-off Voltage
V
DS
= 3 V
= 50 µA
I
D
Small Signal Gain *)
= 3 V
V
DS
Pin = -5 dBm
= 180 mA f = 1.8 GHz
I
D
Small Signal Gain **)
= 3 V
V
DS
Pin = -5 dBm
= 180 mA f = 1.8 GHz
I
D
Output Power
VDS = 3V
Pin = 10 dBm
= 180 mA f = 1.8 GHz
I
D
I
DSS
I
D(p)
I
G(p)
V
GS(p)
G
G
P
300 450 650 mA
-550µA
-520µA
-3.8 -2.8 -1.8 V
- 15.5 - dB
- 14.5 - dB
o
22.5 23.5 dBm
1dB-Compression Point
= 3 V
V
DS
= 180 mA f = 1.8 GHz
I
D
1dB-Compression Point
= 5 V
V
DS
= 180 mA f = 1.8 GHz
I
D
Power Added Efficiency
VDS = 3V
Pin = 10 dBm
*
)Matching conditions for maximum small signal gain ( not identical with power
matching conditions ! )
**
) Power matching conditions: f = 1.8 GHz
Source Match: Γ
Siemens Aktiengesellschaft pg. 2/77 17.12.96
= 180mA f = 1.8 GHz
I
D
: MAG = 0.74, ANG 132°; Load Match: Γml: ;MAG 0.61, ANG -153°
ms
P
1dB
P
1dB
PAE
- 23.5 - dBm
- 27.0 - dBm
-55-%
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
Output Characteristics
0,5
0,45
0,4
0,35
0,3
0,25
0,2
0,15
Draincurrent [A]
0,1
0,05
0
01234567
PtotDC
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
Drain-Source Voltage [V]
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; ID = 0.5IDSS
P1dB
ηη
D
40
[dB m ]
35
30
25
20
15
10
5
0
0123456
Drain -Source V ol tag e
[V]
80
[%]
70
60
50
40
30
20
10
0
Siemens Aktiengesellschaft pg. 3/77 17.12.96
HL EH PD 21
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