GaAs FET CLY 2
________________________________________________________________________________________________________
D a t a s h e e t
*Power amplifier for mobile phones
*For frequencies up to 3 GHz
6
5
4
*Operating voltage range: 2 to 6 V
* P
at V
=3V, f=1.8GHz typ. 23.5 dBm
* High efficiency better 55 %
3
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
CLY 2 Y2 Q62702-L96 G S D D S G MW 6
. 1 2 3 4 5 6
Pin Configuration
1
2
Package 1)
Maximum ratings Symbol Unit
Drain-source voltage V
Drain-gate voltage V
Gate-source voltage V
Drain current I
Channel temperature T
Storage temperature T
Total power dissipation (T
< 50°C)
S
2)
P
DS
DG
GS
D
Ch
stg
tot
-55...+150 °C
Thermal Resistance
Channel-soldering point
1) Dimensions see chapter Package Outlines
2) TS is measured on the source lead at the soldering point to the pcb.
2)
R
thChS
9V
12 V
-6 V
600 mA
150 °C
900 mW
≤110 K/W
Siemens Aktiengesellschaft pg. 1/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics Symbol min typ max Unit
Drain-source saturation current
V
DS
= 3 V
= 0 V
V
GS
Drain-source pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Gate pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Pinch-off Voltage
V
DS
= 3 V
= 50 µA
I
D
Small Signal Gain *)
= 3 V
V
DS
Pin = -5 dBm
= 180 mA f = 1.8 GHz
I
D
Small Signal Gain **)
= 3 V
V
DS
Pin = -5 dBm
= 180 mA f = 1.8 GHz
I
D
Output Power
VDS = 3V
Pin = 10 dBm
= 180 mA f = 1.8 GHz
I
D
I
DSS
I
D(p)
I
G(p)
V
GS(p)
G
G
P
300 450 650 mA
-550µA
-520µA
-3.8 -2.8 -1.8 V
- 15.5 - dB
- 14.5 - dB
o
22.5 23.5 dBm
1dB-Compression Point
= 3 V
V
DS
= 180 mA f = 1.8 GHz
I
D
1dB-Compression Point
= 5 V
V
DS
= 180 mA f = 1.8 GHz
I
D
Power Added Efficiency
VDS = 3V
Pin = 10 dBm
*
)Matching conditions for maximum small signal gain ( not identical with power
matching conditions ! )
**
) Power matching conditions: f = 1.8 GHz
Source Match: Γ
Siemens Aktiengesellschaft pg. 2/77 17.12.96
= 180mA f = 1.8 GHz
I
D
: MAG = 0.74, ANG 132°; Load Match: Γml: ;MAG 0.61, ANG -153°
ms
P
1dB
P
1dB
PAE
- 23.5 - dBm
- 27.0 - dBm
-55-%
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
Output Characteristics
0,5
0,45
0,4
0,35
0,3
0,25
0,2
0,15
Draincurrent [A]
0,1
0,05
0
01234567
PtotDC
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
Drain-Source Voltage [V]
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; ID = 0.5IDSS
P1dB
ηη
D
40
[dB m ]
35
30
25
20
15
10
5
0
0123456
Drain -Source V ol tag e
[V]
80
[%]
70
60
50
40
30
20
10
0
Siemens Aktiengesellschaft pg. 3/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
typ. Common Source S-Parameters
VDS = 3 V ID = 180 mA Zo = 50 ΩΩ
f GHZ S11 S21 S12 S22
MAG ANG MAG ANG MAG ANG MAG ANG
0.100 0.99 -12.0 9.17 171.6 0.007 83.3 0.15 -16.6
0.150 0.99 -17.9 9.11 167.4 0.011 80.8 0.16 -24.2
0.200 0.98 -23.7 9.01 163.4 0.014 77.6 0.16 -31.2
0.250 0.97 -29.5 8.89 159.3 0.017 74.7 0.16 -39.0
0.300 0.96 -35.1 8.75 155.4 0.021 72.4 0.16 -45.9
0.400 0.94 -46.0 8.40 147.8 0.026 67.0 0.17 -58.2
0.500 0.92 -56.4 8.03 140.7 0.031 62.5 0.18 -69.2
0.600 0.89 -66.2 7.61 134.1 0.036 58.0 0.18 -79.0
0.700 0.86 -75.4 7.22 128.0 0.039 54.4 0.19 -87.0
0.800 0.84 -84.1 6.82 122.3 0.043 51.2 0.20 -94.2
0.900 0.82 -92.1 6.45 117.2 0.045 48.3 0.20 -100.4
1.000 0.80 -99.7 6.10 112.3 0.048 46.1 0.21 -105.3
1.200 0.77 -113.6 5.45 103.6 0.052 41.8 0.22 -115.1
1.400 0.74 -125.9 4.92 95.8 0.055 38.6 0.23 -122.9
1.500 0.73 -131.5 4.71 92.1 0.056 37.2 0.23 -125.7
1.600 0.72 -137.1 4.48 88.5 0.057 36.2 0.24 -129.4
1.800 0.72 -147.4 4.10 81.7 0.059 34.0 0.25 -135.0
2.000 0.71 -157.2 3.77 75.0 0.060 31.9 0.26 -139.7
2.200 0.71 -165.3 3.47 68.8 0.062 31.2 0.27 -143.0
2.400 0.71 -173.3 3.19 63.0 0.063 29.7 0.29 -147.2
2.500 0.71 -177.4 3.06 60.1 0.063 28.9 0.29 -150.0
3.000 0.72 165.7 2.52 47.2 0.065 28.4 0.32 -159.7
3.500 0.74 151.7 2.12 36.4 0.066 29.7 0.36 -167.5
4.000 0.76 139.9 1.85 26.5 0.073 30.6 0.39 -173.1
4.500 0.78 127.4 1.61 15.3 0.078 28.2 0.42 179.2
5.000 0.79 116.7 1.43 4.6 0.085 24.0 0.45 174.3
5.500 0.80 106.3 1.23 -5.9 0.085 20.9 0.49 167.8
6.000 0.83 97.1 1.06 -14.8 0.087 17.7 0.52 160.9
Additional S-Parameter available on CD
Siemens Aktiengesellschaft pg. 4/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
typ. Common Source S-Parameters
VDS = 5 V ID = 180 mA Zo = 50 ΩΩ
f GHZ S11 S21 S12 S22
MAG ANG MAG ANG MAG ANG MAG ANG
0.100 0.99 -12.3 9.30 171.3 0.007 83.1 0.27 -10.8
0.150 0.99 -18.4 9.23 166.9 0.010 80.0 0.27 -15.8
0.200 0.98 -24.3 9.13 162.8 0.014 77.2 0.26 -20.4
0.250 0.97 -30.3 9.00 158.5 0.017 73.6 0.26 -25.7
0.300 0.96 -36.1 8.85 154.6 0.020 71.1 0.26 -30.5
0.400 0.94 -47.2 8.48 146.7 0.026 65.8 0.26 -39.2
0.500 0.91 -57.8 8.08 139.4 0.030 61.0 0.25 -47.7
0.600 0.89 -67.8 7.64 132.6 0.034 56.3 0.25 -55.4
0.700 0.86 -77.1 7.23 126.3 0.038 52.8 0.25 -62.2
0.800 0.84 -85.9 6.81 120.6 0.041 49.5 0.24 -68.6
0.900 0.81 -93.9 6.43 115.3 0.043 46.4 0.24 -74.1
1.000 0.80 -101.5 6.07 110.4 0.045 44.2 0.24 -79.2
1.200 0.76 -115.4 5.40 101.4 0.048 40.1 0.24 -88.8
1.400 0.74 -127.6 4.87 93.6 0.051 36.9 0.24 -96.8
1.500 0.73 -133.2 4.65 89.8 0.052 35.6 0.24 -100.2
1.600 0.72 -138.8 4.42 86.1 0.052 34.6 0.24 -103.9
1.800 0.72 -149.0 4.04 79.2 0.054 32.7 0.25 -110.4
2.000 0.71 -158.6 3.71 72.3 0.054 30.9 0.26 -116.2
2.200 0.71 -166.6 3.41 66.1 0.055 30.9 0.27 -120.4
2.400 0.71 -174.5 3.13 60.1 0.056 29.9 0.28 -125.6
2.500 0.71 -178.5 3.00 57.1 0.056 29.4 0.29 -129.1
3.000 0.73 164.9 2.47 43.9 0.057 30.8 0.32 -140.6
3.500 0.75 151.1 2.07 32.5 0.059 34.3 0.35 -150.6
4.000 0.77 139.4 1.80 22.1 0.067 36.7 0.40 -158.2
4.500 0.78 126.9 1.56 10.5 0.074 34.7 0.43 -167.6
5.000 0.79 116.1 1.37 -0.6 0.082 30.2 0.47 -174
5.500 0.81 105.6 1.18 -11.6 0.083 26.7 0.51 178
6.000 0.84 96.3 1.00 -20.8 0.086 22.9 0.54 169.6
Additional S-Parameter available on CD
Siemens Aktiengesellschaft pg. 5/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
Total Power Dissipation
P
= f(Ts)
tot
1.0
[W]
0.8
0.6
0.4
0.2
0
0 50 100 150
O
C
Ts
Permissible Pulse Load
P
totmax/PtotDC
= f(tp)
Siemens Aktiengesellschaft pg. 6/77 17.12.96
HL EH PD 21
GaAs FET CLY 2
________________________________________________________________________________________________________
CLY2 Power GaAs-FET Matching Conditions
Definition:
ΓΓ
Measured Data:
Typ f
[GHz]
CLY2
Note: Gain is small signal gain @ Γms and Γ
0.9 3 175 22.8 15.7 0.49 75 0.42 -165
1.5 5 175 25.8 16.1 0.68 106 0.42 143
1.8 2 175 19.0 15.0 0.75 130 0.52 -171
2.4 3 175 21.5 13.0 0.70 158 0.46 -179
V
DS
[V]
5 17 5 25.8 16.5 0.52 75 0.22 -172
6 17 5 26.9 16.9 0.50 76 0.21 -156
6 17 5 26.9 16.9 0.76 113 0.34 139
3 17 5 22.8 15.4 0.70 125 0.45 -172
4 17 5 24.5 15.6 0.75 131 0.41 166
5 17 5 25.8 15.7 0.72 131 0.38 163
6 17 5 26.8 16.0 0.72 135 0.35 155
5 17 5 26.1 13.0 0.67 152 0.36 -178
I
D
[mA]
P[dBm]
ml
1dB
Gain
[dB]
Γ
ms
MAG
Γ
ms
ANG
Γ
ml
MAG
Γ
ml
ANG
Siemens Aktiengesellschaft pg. 7/77 17.12.96
HL EH PD 21
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