Siemens CLY10 Datasheet
GaAs FET CLY 10
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D a t a s h e e t
*Power amplifier for mobile phones
*For frequencies from 400 MHz to 2.5 GHz
*Wide operating voltage range: 2.7 to 6 V
* P
at V
=3V, f=1.8GHz 28.5 dBm typ.
*High efficiency better 55 %
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
CLY 10 CLY 10 Q62702-L94 G S D S SOT 223
Pin Configuration
1 2 3 4
Package 1)
Maximum ratings Symbol Values Unit
Drain-source voltage V
Drain-gate voltage V
Gate-source voltage V
Drain current I
Channel temperature T
Storage temperature T
Total power dissipation (T
Total power dissipation (T
< 80 °C)
s
< 110 °C)
s
2)
2)
DS
DG
GS
Ch
stg
P
totDC
D
9V
12 V
-6 V
2.1 A
150 °C
-55...+150 °C
3.5
W
2.0
Thermal resistance
Channel - soldering point
1) Dimensions see chapter Package Outlines
2) Ts is measured on the source lead to the PCB under load.
Siemens Aktiengesellschaft pg. 1/7 17.12.96
2)
R
thChS
≤20
K/W
HL EH PD 21
GaAs FET CLY 10
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Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics Symbol min typ max Unit
Drain-source saturation current
V
DS
= 3 V
= 0 V
V
GS
Drain-source pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Gate pinch-off current
V
DS
= 3 V
V
GS
= -3.8 V
Pinch-off Voltage
V
DS
= 3 V
=200µA
I
D
Small Signal Gain *)
= 3 V
V
DS
Pin = 0 dBm
= 700 mA f = 1.8 GHz
I
D
Small Signal Gain **)
= 3 V
V
DS
Pin = 0 dBm
= 700 mA f = 1.8 GHz
I
D
Output Power
= 3 V
V
DS
Pin = 20.5 dBm
= 700 mA f = 1.8 GHz
I
D
I
DSS
I
I
V
GS(p)
G
G
P
D
G
1.2 1.6 2.4 A
- - 200 µA
-1035µA
-3.8 -2.8 -1.8 V
dB
-9-
dB
-8-
o
28 28.5 - dBm
Output Power
= 5 V
V
DS
Pin = 20 dBm
= 700 mA f = 0.9 GHz
I
D
1dB-Compression Point
V
DS
= 3 V
= 700 mA f = 1.8 GHz
I
D
1dB-Compression Point
V
DS
= 5 V
= 700 mA f = 1.8GHz
I
D
Power Added Efficiency
= 5 V
V
DS
Pin = 20 dBm
*
) Matching conditions for maximum small signal gain: f = 1.8 GHz
Source Match: Γ
**
) Power matching conditions: f = 1.8 GHz
Source Match: Γ
Siemens Aktiengesellschaft pg. 2/7 17.12.96
= 700 mA f = 1.8 GHz
I
D
: MAG = 0.70, ANG -116°; Load Match: Γml: ;MAG 0.68, ANG -145°
ms
: MAG = 0.70, ANG -120°; Load Match: Γml: ;MAG 0.78, ANG -130°
ms
P
P
1dB
P
1dB
PAE
o
32.0 32.5 - dBm
- 28.5 - dBm
- 32.5 - dBm
40 55 - %
HL EH PD 21
GaAs FET CLY 10
_________________________________________________________________________________________________________
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS = 0.5 IDSS
P1dB
40
[dBm]
35
30
25
20
15
10
5
0
012345678
Drain-Source Voltage
[V]
ηη
80
[%]
70
60
50
40
30
20
10
0
D
Small Signal Gain
16
[dB]
14
12
10
8
6
4
2
0
012345678
Drain-Source Voltage
P1dB
4.0
[W]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
[V]
Output Characteristics
1,8
1,6
1,4
1,2
1
0,8
0,6
Draincurrent [A]
0,4
0,2
0
0123456
Siemens Aktiengesellschaft pg. 3/7 17.12.96
PtotDC
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
Drain-Source Voltage [V]
HL EH PD 21
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