Siemens BYP100 Datasheet
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
BYP 100
Preliminary data
Type
V
RRM
I
FRMS
t
rr
Package Ordering Code
BYP 100 1000V 8A 55ns TO-218 AD C67047-A2254-A2
Maximum Ratings
Parameter
Mean forward current
T
= 90 °C, D = 0.5
C
RMS forward current
Surge forward current, sine halfwave, aperiodic
T
= 100 °C, f = 50 Hz
j
Repetitive peak forward current
T
= 100 °C,
j
i 2t
value
T
= 100 °C,
j
t
≤ 10 µs
p
t
= 10 ms
p
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation
T
= 90 °C
C
Chip or operating temperature
Storage temperature
Symbol Values Unit
I
FAV
A
5
I
FRMS
I
FSM
8
20
I
FRM
50
2
∫
i
d
t
A2s
2
V
V
P
RRM
RSM
tot
1000 V
1000
W
15
T
j
T
stg
-40 ... + 150 °C
-40 ... + 150
Thermal resistance, chip case
Thermal resistance, chip-ambient
R
R
thJC
thJA
≤
≤
9.8
46
K/W
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56
Semiconductor Group 1 09.96
BYP 100
Preliminary data
Electrical Characteristics
, at T
Parameter
Static Characteristics
Forward voltage drop
I
= 5 A,
F
I
= 5 A,
F
T
= 25 °C
j
T
= 100 °C
j
Reverse current
V
= 1000 V,
R
V
= 1000 V,
R
V
= 1000 V,
R
T
= 25 °C
j
T
= 100 °C
j
T
= 150 °C
j
AC Characteristics
Reverse recovery charge
I
= 5 A,
F
T
= 100 °C
j
V
= 300 V, diF/dt = -800 A/µs
CC
Peak reverse recovery current
I
= 5 A,
F
T
= 100 °C
j
V
= 300 V, diF/dt = -800 A/µs
CC
Reverse recovery time
I
= 5 A,
F
T
= 100 °C
j
V
= 300 V, diF/dt = -800 A/µs
CC
Storage time
I
= 5 A,
F
T
= 100 °C
j
V
= 300 V, diF/dt = -800 A/µs
CC
Softfaktor
= 25 °C, unless otherwise specified
j
Symbol Values Unit
min. typ. max.
V
F
I
Q
-
-
R
-
-
-
rr
2
1.7
0.01
0.05
0.15
- 0.8 1.5
I
RRM
- 22 -
t
rr
- 55 85
t
S
- 30 -
S
V
2.45
mA
0.25
-
-
µC
A
ns
-
I
= 5 A,
F
T
= 100 °C
j
Semiconductor Group 2 09.96
V
= 300 V, diF/dt = -800 A/µs
CC
- 0.8 -
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