Siemens BXY44K Datasheet

Silicon PIN Diode BXY 44K
Microwave attenuator diode
Linear RF characteristic
Type Ordering CodeMarking
BXY 44K Q62702-X148–T1
Pin Configuration
Package
1)
heat sink
Maximum Ratings Parameter Symbol Values Unit
Reverse voltage V
R 200 V
Forward current IF 0.5 A Peak forward current, tp =1 µs IFRM 20 Total power dissipation P
tot 600 mW
Junction temperature Tj 175 ˚C Storage temperature range T
stg – 65 … + 150
Operating temperature range Top – 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
Electrical Characteristics
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BXY 44K BXY 44K
Parameter Symbol
min. typ. max.
V
(BR) 200
R = 10 µA
Forward voltage
R = 100 mA
R = 100 V
V
F = 10 mA, VR = 10 V
R = 50 V, f = 1 MHz
V
V
F ––1
I
R ––10
t
s –50–
C
T 0.4
Case capacitance CC 0.1
τL
F = 10 mA, IR = 6 mA
0.5
rf
f = 100 MHz, I f = 100 MHz, I f = 100 MHz, I
F = 10 µA F = 1 mA F = 10 mA
– – –
1000 25
3.5
UnitValues
VBreakdown voltage
nAReverse current
nsStorage time
pFDiode capacitance
µsCharge carrier life time
Forward resistance
– – –
Semiconductor Group 2
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