Silicon PIN Diode BXY 44K
● Microwave attenuator diode
● Linear RF characteristic
Type Ordering CodeMarking
BXY 44K Q62702-X148–T1
Pin Configuration
Cathode: black dot,
Package
1)
heat sink
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage V
R 200 V
Forward current IF 0.5 A
Peak forward current, tp =1 µs IFRM 20
Total power dissipation P
tot 600 mW
Junction temperature Tj 175 ˚C
Storage temperature range T
stg – 65 … + 150
Operating temperature range Top – 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BXY 44K BXY 44K
Parameter Symbol
min. typ. max.
V
(BR) 200 – –
R = 10 µA
Forward voltage
R = 100 mA
R = 100 V
V
F = 10 mA, VR = 10 V
R = 50 V, f = 1 MHz
V
V
F ––1
I
R ––10
t
s –50–
C
T – – 0.4
Case capacitance CC – 0.1 –
τL
F = 10 mA, IR = 6 mA
– 0.5 –
rf
f = 100 MHz, I
f = 100 MHz, I
f = 100 MHz, I
F = 10 µA
F = 1 mA
F = 10 mA
–
–
–
1000
25
3.5
UnitValues
VBreakdown voltage
nAReverse current
nsStorage time
pFDiode capacitance
µsCharge carrier life time
ΩForward resistance
–
–
–
Semiconductor Group 2