Siemens BXY43C, BXY43B, BXY43A Datasheet
Silicon PIN Diodes BXY 43
● High-speed switching
● Phase shifting up to 10 GHz
● Power splitter
Type Ordering CodeMarking
BXY 43A Q62702-X116–T1
Pin Configuration
Cathode: black dot,
Package
1)
BXY 43B Q62702-X104
BXY 43C Q62702-X105
Maximum Ratings
Parameter Symbol Unit
Values
BXY 43A BXY 43B BXY 43C
Breakdown voltage V
(BR) 150 V
Forward current IF 400 mA
Peak forward current, tp =1 µs IFRM 10 A
Total power dissipation Ptot 500 mW
150
500
20
600
150
500
20
600
Junction temperature Tj 175 ˚C
Storage temperature range T
Operating temperature range Top
stg
– 55 … + 150
– 55 … + 150
Thermal Resistance
Junction - case Rth JC 80 K/W
1)
For detailed information see chapter Package Outlines.
70
70
Semiconductor Group 1
Electrical Characteristics
I
Ω
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BXY 43 BXY 43
Parameter Symbol
UnitValues
min. typ. max.
DC Characteristics
R = 100 V
V
F = 100 mA
I
R –5–
V
F –1–
nAReverse current
VForward voltage
AC Characteristics
C
T
pFDiode capacitance
VR = 50 V, f = 1 MHz
BXY 43A
BXY 43B
BXY 43C
Forward resistance
F = 10 mA, f = 100 MHz
f
r
BXY 43A
BXY 43B
BXY 43C
–
–
–
–
–
–
0.19
0.25
0.35
1.2
1.0
1.0
0.20
0.28
0.40
–
–
–
τL
F = 10 mA, IR = 6 mA
Storage time
F = 10 mA, VR = 10 V
BXY 43A
BXY 43B
BXY 43C
BXY 43A
BXY 43B
BXY 43C
–
–
–
s
t
–
–
–
s – 0.3 –
L
I
250
350
350
15
20
25
–
–
–
–
–
–
nsCharge carrier life time
nHCase series inductance L
APreaging at forward current
for 168 hours
BXY 43A
BXY 43B
BXY 43C
Gross and fine leakage test – – 10
–
–
–
0.2
0.2
0.5
–
–
–
–8
–
torr.1
– s
Semiconductor Group 2
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