Siemens BTS 780 Technical data

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TrilithIC

BTS 780

Target Data

Overview

Features

• Quad switch driver

• Free configurable as bridge or quad-switch

• Optimized for DC motor management applications

• Ultra low RDS ON @ 25 °C: High-side switch: typ. 35 mΩ,

Low-side switch: typ. 15 mΩ

•Very high peak current capability

•Very low quiescent current

•Spaceand thermal optimized SMD-Power-Package

•Load and GND-short-circuit-protected

•Operates up to 40 V

•2-Bit status flag diagnosis

•Overtemperature shut down with hysteresis

•Short-circuit detection and diagnosis

•Open-load detection and diagnosis

•C-MOS compatible inputs

•Internal clamp diodes

•Isolated sources for external current sensing

•Overand under-voltage detection with hysteresis

P-TO263-15-1

Type	Ordering Code	Package
BTS 780	on request	P-TO263-15-1

Description

The BTS 780 is a TrilithIC contains one double high-side switch and two low-side switches in one P-TO263-15-1.

“Silicon instead of heatsink” becomes true

The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency.

The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis (the comparable standard high-side product is the BTS 734L1).

Semiconductor Group

1

1998-02-01

BTS 780

For minimized RDS ON the two low-side switches are produced in the SIEMENS S-Fet logic level technology (the comparable standard product is the BUZ 100SL).

Each drain of these three chips is mounted on separated leadframes (see pin configuration). The sources of all four power transistors are connected to separate pins.

So the BTS 780 can be used in H-Bridge configuration as well as in any other switch configuration.

Moreover, it is possible to add current sense resistors.

All these features open a broad range of automotive and industrial applications.

Semiconductor Group

2

1998-02-01

BTS 780

				Molding
				Compound
	SL1	1		Heat-Slug 1
	SL1	2	17	DL1
	GL1	3
	GND	4
	GH1	5		Heat-Slug 2
	ST1	6
	SH1	7
			16	DHVS
	GND	8
	GH2	9
	ST2	10
	SH2	11		Heat-Slug 3
	SL2	12
				DL2
	SL2	13	15
	GL2	14
			AEP02224

Figure 1 Pin Configuration (top view)

Semiconductor Group

3

1998-02-01

BTS 780

Pin Definitions and Functions

Pin No.	Symbol	Function
1, 2	SL1	Source of low-side switch 1
3	GL1	Gate of low-side switch 1
4, 8	GND	Ground
5	GH1	Gate of high-side switch 1
6	ST1	Status of high-side switch 1; open Drain output

7	SH1	Source of high-side switch 1
9	GH2	Gate of high-side switch 2
10	ST2	Status of high-side switch 2; open Drain output
11	SH2	Source of high-side switch 2
12, 13	SL2	Source of low-side switch 2
14	GL2	Gate of low-side switch 2
15	DL2	Drain of low-side switch 2
		Heat-Slug 3 or Heat-Dissipator
16	DHVS	Drain of high-side switches and power supply voltage
		Heat-Slug 2 or Heat-Dissipator
17	DL1	Drain of low-side switch 1
		Heat-Slug 1 or Heat-Dissipator

Bold type: Pin needs power wiring

Semiconductor Group

4

1998-02-01

BTS 780

DVHS

16 Heat-Slug 2

ST1 6

DST1

C6V1

Diagnosis		Biasing and Protection

ST2 10

DST2

C6V1

	R I1		Driver
GH1	5		IN	OUT
	3.5 kΩ	1	2	1	2	R O1	R O2
	DI1	0	0	L	L			11
	C6V1								SH2
	R I2	0	1	L	H	10 kΩ	10 kΩ
GH2	9	1	0	H	L
	3.5 kΩ	1	1	H	H		Heat-Slug 3	15	DL2
	DI2
	C6V1							7	SH1
GND	4, 8
							Heat-Slug 1	17
									DL1

GL1	3
GL2	14

1, 2	12, 13
SL1	SL2

AEB02225

Figure 2 Block Diagram

Semiconductor Group

5

1998-02-01

BTS 780

Circuit Description

Input Circuit

The control inputs GH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages.

The inputs GH1 and GH2 are connected to a standard N-channel logic level power-MOS gate.

Output Stages

The output stages consist of an ultra low RDS ON make the outputs short-circuit proof to ground negative voltage spikes, which occur when integrated power clamp diodes.

Power-MOS H-Bridge. Protective circuits and load short-circuit proof. Positive and driving inductive loads, are limited by

Short-Circuit Protection (valid only for the high-side switches)

The outputs are protected against

–output short circuit to ground, and

–overload (load short circuit).

An internal OP-Amp controls the Drain-Source-Voltage of the HS-Switches by comparing the DS-Voltage-Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage.

In the case of an overloaded high-side switch the corresponding status output is set to low.

If the HS-Switches are in OFF-state-Condition internal resistors RO1,2 from SH1,2 to GND pull the voltage at SH1,2 to low values. On each output pin SH1 and SH2 an output

examiner circuit compares the output voltages with the internal reference voltage VEO. This results in switching the corresponding status output to low if the source voltage in OFF-Condition is higher then VEO. In H-Bridge condition this feature can be used to protect the low-side switches against short circuit during the OFF-period.

Overtemperature Protection (valid only for the high-side-switches)

The chip also incorporates an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low.

Semiconductor Group

6

1998-02-01