Siemens BTS410F2 Datasheet

Smart Highside Power Switch

)

PROFET® BTS 410 F2

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

1

)

V

protection

bb

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO) Current limitation

TO-220AB/5

5

Standard

Straight leads

V

bb(AZ

V

bb(on

R

ON

I

L(ISO

I

L(SCr

1

65 V

4.7 ... 42 V 220

1.8 A

2.7 A

5

1

SMD

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

5

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

PROFET

3

OUT

5

Load



1

Signal GND

Load GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistors in series with IN and ST

GND

connections, reverse load current limited by connected load.

Semiconductor Group 1 03.97

BTS 410 F2

j,

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3)

)

Load dump protection

)

3

R

= 2 Ω,

I

R

= 6.6 Ω,

L

2

V

LoadDump

t

= 400 ms, IN= low or high

d

=

U

+

V

A

,

s

U

= 13.5 V

A

Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C

V

bb

V

Load dump

I

L

T

j

T

stg

P

tot

65 V

)

4

100 V

self-limited A

-40 ...+150

°C

-55 ...+150 50 W

Inductive load switch-off energy dissipation, single pulse V

= 12V,

Electrostatic discharge capability (ESD (Human Body Model

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

T

= 150°C,

start

T

= 150°C const.

C

I

= 1.8 A, Z

L

= 2.3 H, 0 Ω:

L

all other pins:

IN:

E V

V I I

AS

ESD

IN IN ST

4.5 J 1

kV

2

-0.5 ... +6 V ±5.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance chip - case:

junction - ambient (free air):

R

thJC

thJA

--

SMD version, device on PCB5):--35--

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

2

(one layer, 70µm thick) copper area for V

Semiconductor Group 2

2.5 75

K/W

bb

BTS 410 F2

)

j

)

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 1.6 A

L

Nominal load current, ISO Norm (pin 3 to 5

V

= 0.5 V,

ON

Output current (pin 5) while GND disconnected or

GND pulled up,

page 7, Turn-on time IN to 90% Turn-off time IN to 10%

R

= 12 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 12 V unless otherwise specified

bb

T

= 85 °C

C

V

bb

T

=-40...+150°C

T

=-40...+150°C

,

j

V V

OUT

R

,

R

,

= 12 Ω

L

=30 V,

= 12 Ω

V

IN

T

=-40...+150°C

,

j

T

=-40...+150°C

,

j

T

=25 °C:

j

T

=150 °C:

j

= 0, see diagram

V

OUT

V

OUT

: :

R

I I

t t

dV /dt

-dV/dt

ON

L(ISO) L(GNDhigh)

on off

on

off

min typ max

-- 190 390

220 440

mΩ

1.6 1.8 -- A

-- -- 1 mA

12

5

--

125

--

85

-- -- 3 V/µs

-- -- 6 V/µs

µs

Operating Parameters

Operating voltage

6

T

j

)

Undervoltage shutdown

T

j

Undervoltage restart

T

j

Undervoltage restart of charge pump see diagram page 12

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=4 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

7

T

j

T

j

T

j

T

j

Standby current (pin 3)

V

=0

IN

Leakage output current (included in

IN

V

=0

Operating current (Pin 1)8),

=-40...+150°C

T

)

6

At supply voltage increase up to

7)

Meassured without load. See also

V

=5 V,

IN

V

= 5.6 V typ without charge pump,

bb

V

ON(CL)

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

V

4.7 -- 42 V

2.9

2.7

--

-- -- 4.9 V

-- 5.6 6.0 V

-- 0.1 -- V

42 -- 52 V 40 -- -- V

-- 0.1 -- V

65 70 -- V

--

10 18

-- -- 20 µA

-- 1 2.1 mA

≈

V

OUT

bb

- 2 V

=-40...+150°C:

T

=25°C:

j

=-40...+150°C: =-40...+150°C:

=-40...+150°C: =-40...+150°C: =-40...+150°C: ∆ =-40...+150°C:

T

=-40...+25°C

j

T

= 150°C:

j

I

)

bb(off

in table of protection functions and circuit diagram page 6.

4.5

4.7

15 25

V

µA

Semiconductor Group 3

Protection Functions

)

j

)

Initial peak short circuit current limit (pin 3 to 5 ( max 450 µs if

V

ON

>

V

ON(SC)

)

T

=+150°C:

j

T

9

,

=-40°C:

=25°C:

Overload shutdown current limit

V

= 8 V,

ON

T

=

T

j

(see timing diagrams, page 10)

jt

Short circuit shutdown delay after input pos. slope

V

>

V

ON

min value valid only, if input "low" time exceeds 60 µs

ON(SC)

,

T

=-40..+150°C:

j

Output clamp (inductive load switch off at

V

=

V

-

OUT

bb

V

ON(CL)

I

= 40 mA,

L

I

= 1 A,

L

T

=-40..+150°C:

j

T

=-40..+150°C: -- -- 75

j

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis

)

Reverse battery (pin 3 to 1)

10

I

L(SCp)

I

L(SCr)

t

d(SC)

V

ON(CL)

V

ON(SC)

T

jt

∆T

jt

-

V

bb

BTS 410 F2

4.0

3.5

2.0

-- 2.7 -- A

-- -- 450 µs

61 68 73 V

-- 8.5 -- V

150 -- -- °C

-- 10 -- K

-- -- 32 V

5.5

3.5

--

11

A

10

7.5

Diagnostic Characteristics

Open load detection current

(on-condition)

Input and Status Feedback

11

Input turn-on threshold voltage Input turn-off threshold voltage

T

j

)

T

=-40..+150°C:

j

T

=-40..+150°C:

j

Input threshold hysteresis Off state input current (pin 2), On state input current (pin 2),

V

= 0.4 V

IN

V

= 5 V

IN

Status invalid after positive input slope (short circuit)

T

=-40 ... +150°C:

j Status invalid after positive input slope (open load)

T

=-40 ... +150°C:

j Status output (open drain) Zener limit voltage ST low voltage

T

=-40...+150°C,

j

T

=-40...+150°C,

j

I

ST

=-40 ..150°C:

I

= +50 uA:

ST

= +1.6 mA:

I

L (OL)

V

IN(T+)

V

IN(T-)

∆

V

IN(T)

I

IN(off)

I

IN(on)

t

d(ST SC)

t

d(ST)

V

ST(high)

V

ST(low)

mA

2 -- 150

1.5 -- 2.4 V

1.0 -- -- V

-- 0.5 -- V 1--30

10 25 70

µ µ

-- -- 450

300 -- 1400

5.0

--

6

--

0.4

A A

µ

s

µ

s

V

)

8 9 10

11)

)

I

ST

, if

I

> 0, add

ST

Add Short circuit current limit for max. duration of t Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). If a ground resistor R

I

V

, if

IN

is used, add the voltage drop across this resistor.

GND

>5.5 V

IN

d(SC) max

=450 µs, prior to shutdown

Semiconductor Group 4