Siemens BTS308 Datasheet

Smart Highside Power Switch

)

PROFET® BTS 308

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Thermal shutdown

•

Overvoltage protection (including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in OFF-state

•

CMOS compatible input

•

Loss of ground and loss of

•

Electrostatic discharge (ESD) protection

1

)

V

protection

bb

Product Summary

Overvoltage protection Operating voltage

On-state resistance Load current (ISO)

TO-220AB/5

5

Standard

Straight leads

V

bb(AZ

V

bb(on

R

ON

I

L(ISO

1

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

•

Fast switching

•

Not suitable for lamp loads

60 V

4.7 ... 34 V 300

1.3 A

5

SMD

m

Ω

5

1

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

+ V

bb

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

detection

Short circuit

Gate

protection

Limit for

ind. loads

detection

OUT

Temperature

sensor

PROFET

1

Signal GND

3

5

Load



Load GND

)

1

With external current limit (e.g. resistor R

=150 Ω) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Semiconductor Group 1 12.96

BTS 308

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

at

T

= 25 °C unless otherwise specified

Maximum Ratings

j

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Electrostatic discharge capability (ESD

IN, ST:

(Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6

Thermal resistance chip - case:

junction - ambient (free air):

V I T T P V

V I I

R R

bb

L

j stg

tot

ESD

IN IN ST

thJC

thJA

60 V

self-limited A

-40 ...+150

°C

-55 ...+150 50 W

1

kV

tbd (>1)

-10 ... +16 V ±5.0

mA

±5.0

≤ 2.5

K/W

≤ 75

Semiconductor Group 2

BTS 308

j

)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I

= 0.8 A,

L

V

= 24 V unless otherwise specified

bb

V

bb

= 12V

T

=25 °C:

T

=150 °C:

j

R

ON

min typ max

-- 270 540

300 600

mΩ

Nominal load current, ISO Norm (pin 3 to 5

V

= 0.5 V,

ON

T

= 85 °C

C

Output current (pin 5) while GND disconnected or

GND pulled up,

V

bb

=30 V,

V

= 0, see diagram

IN

page 7 Turn-on time to 90% Turn-off time to 10%

R

L

= 47 Ω,

V

bb

Slew rate on, 10 to 30%

R

= 47 Ω,

L

V

= 12V,

bb

Slew rate off, 10 to 30%

R

= 47 Ω,

L

V

= 12V,

bb

V

OUT

V

OUT

= 12V,

T

: :

T

=-40...+150°C

j

V

,

OUT

=-40...+150°C

j

V

,

OUT

=-40...+150°C

j

Operating Parameters

Operating voltage

2

T

=-40...+150°C:

j

)

Operating voltage slew rate Undervoltage shutdown

Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=25°C:

j

Undervoltage restart of charge pump see diagram page 11

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

=10 mA

bb

Standby current (pin 3)

V

=0

IN

Operating current (Pin 1)4),

=

V

bb(u rst)

-

V

bb(under)

)

3

,

V

IN

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

=5 V

I

L(ISO)

I

L(GNDhigh)

t

on

t

off

dV /dt

on

-dV/dt

V

bb(on)

dV

dt

/

bb

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

GND

off

1.18 1.3

-- A

-- -- 1 mA

--

50 55

µs

1--10V/µs

2--15V/µs

4.7 -- 34 V

-1 +1 V/µs

2.9

2.7

--

4.5

4.7

-- -- 4.9 V

-- 4.9 7.5 V

-- 0.2 -- V

34 -- 46 V 34 -- -- V

-- 0.5 -- V

59 70 -- V

µA

-- 40 50

-- 2 4 mA

V

2)

At supply voltage increase up to

3)

Meassured without load. See also

)

4

Add

I

, if

ST

> 0, add

ST

I

IN

, if

V

= 4.9 V typ without charge pump,

bb

V

IN

V

>5.5 V

in table of protection functions and circuit diagram page 7.

ON(CL)

Semiconductor Group 3

V

OUT

≈

V

- 2 V

bb

BTS 308

j

)

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Protection Functions

Initial peak short circuit current limit (pin 3 to 5) ( max 100 µs if

V

= 12V

bb

Short circuit shutdown delay after input pos. slope

V

>

ON

min value valid only, if input "low" time exceeds 60 µs

Output clamp (inductive load switch off) at

V

OUT

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1)

V

ON(SC)

=

V

= 24 V unless otherwise specified

bb

V

>

ON

V

ON(SC)

)

,

V

-

bb

V

ON(CL)

I

= 1 A,

L

6

)

T

=-40°C:

T

=25°C:

=+150°C:

j

T

=-40..+150°C:

j

T

=-40..+150°C:

j

min typ max

)

5

,

I

L(SCp)

t

d(SC)

V

ON(CL)

V

ON(SC)

T

jt

∆T

-

V

bb

2.0

2.8

2.0

15 -- 100

59 67 75 V

-- 3.5 -- V

150 -- -- °C

jt

-- 10 -- K

-- -- 32 V

-5

--

10

6.2

A

5

µ

s

Diagnostic Characteristics

Open load detection current

(included in standby current

I

bb(off

Open load detection voltage

=-40...+150°C:

T

)

=-40..150°C:

T

j

I

L(off)

V

OUT(OL)

0--30

A

µ

234V

)

5

Short circuit current limit for max. duration of t

)

6

Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

d(SC) max

=100 µs, prior to shutdown

Semiconductor Group 4