Siemens BTS307 Datasheet
Smart Highside Power Switch
)
)
)
PROFET® BTS 307
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection
•
Fast demagnetization of inductive loads
•
Reverse battery protection
•
Open drain diagnostic output
•
Open load detection in OFF-state
•
CMOS compatible input
•
Loss of ground and loss of
•
Electrostatic discharge (ESD) protection
1
)
V
protection
bb
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
TO-220AB/5
5
Standard
V
bb(AZ
V
bb(on
R
ON
I
L(ISO
Straight leads
1
65 V
5.8 ... 58 V
250
1.7 A
5
1
SMD
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.
m
Ω
5
+ V
bb
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open load
detection
Short circuit
Gate
protection
Limit for
ind. loads
detection
OUT
Temperature
sensor
PROFET
3
5
Load
1
Signal GND
Load GND
)
1
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Semiconductor Group 1 08.96
BTS 307
)
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback
5 OUT
O Output to the load
(Load, L)
at
T
= 25 °C unless otherwise specified
Maximum Ratings
j
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
)
Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
2
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Electrostatic discharge capability (ESD
IN, ST:
(Human Body Model) all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
V
V
I
T
T
P
V
V
I
I
bb
bb
L
j
stg
tot
ESD
IN
IN
ST
65 V
40 V
self-limited A
-40 ...+150
°C
-55 ...+150
50 W
1.0
kV
tbd (>1.0)
-0.5 ... +36 V
±2.0
mA
±5.0
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
2)
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher V
bb
.
R
R
thJC
thJA
--
--
--
--
2.5
75
K/W
Semiconductor Group 2
BTS 307
)
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
T
at
= 25 °C,
j
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
= 2 A,
L
Nominal load current, ISO Norm (pin 3 to 5
V
= 0.5 V,
ON
Output current (pin 5) while GND disconnected or
GND pulled up,
page 7
Turn-on time to 90%
Turn-off time to 10%
R
= 12 Ω,
L
Slew rate on, 10 to 30%
R
= 12 Ω,
L
Slew rate off, 10 to 30%
R
= 12 Ω,
L
V
= 12 V unless otherwise specified
bb
V
= 24 V
bb
T
= 85 °C
C
V
bb
V
= 20V,
bb
V
= 20V,
bb
V
=32 V,
bb
V
V
= 20V,
T
T
V
= 0, see diagram
IN
:
OUT
:
OUT
T
=-40...+150°C
j
V
,
OUT
=-40...+150°C
j
V
,
OUT
=-40...+150°C
j
T
=25 °C:
j
T
=150 °C:
j
R
ON
I
L(ISO)
I
L(GNDhigh)
t
on
t
off
dV /dt
on
-dV/dt
off
min typ max
-- 220
390
250
500
1.4 1.7
-- A
-- -- 1.1 mA
15
20
--
--
80
70
-- -- 6 V/µs
-- -- 7 V/µs
mΩ
µs
Operating Parameters
)
Operating voltage
3
Undervoltage shutdown
Undervoltage restart
T
=-40...+150°C:
j
T
=-40...+150°C:
j
T
=-40...+150°C:
j
Undervoltage restart of charge pump
see diagram page 11
T
=-40...+150°C:
j
Undervoltage hysteresis
V
∆
bb(under)
Overvoltage protection
I
=40 mA
bb
Standby current (pin 3)
V
=0
IN
Operating current (Pin 1)5),
=
V
bb(u rst)
-
V
bb(under)
)
4
,
V
IN
T
=-40...+150°C:
j
T
=5 V
=-40...+150°C:
j
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
V
∆
bb(under)
V
bb(AZ)
I
bb(off)
I
GND
5.8 -- 58 V
2.7 -- 4.7 V
-- -- 4.9 V
-- 5.6 7.5 V
-- 0.4 -- V
65 70 -- V
µA
-- 10 50
-- 2.2 -- mA
)
3
At supply voltage increase up to
4)
)
5
See also
Add
V
I
, if
ST
in table of protection functions and circuit diagram page 7.
ON(CL)
I
> 0, add
ST
I
IN
, if
V
= 5.6 V typ without charge pump,
bb
V
>5.5 V
IN
Semiconductor Group 3
V
OUT
≈
V
- 2 V
bb
BTS 307
j
j
)
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
Output clamp (inductive load switch off)
at
V
OUT
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
Diagnostic Characteristics
Open load detection current
(included in standby current
Open load detection voltage
Short circuit detection voltage
(pin 3 to 5)
=
V
= 12 V unless otherwise specified
bb
V
-
bb
V
ON(CL)
I
L
I
bb(off
= 1 A,
)
6
)
=-40°C:
T
=25°C:
T
=+150°C:
j
T
T
=-40..+150°C:
j
=-40..150°C:
T
j
I
L(SCp)
V
ON(CL)
T
jt
∆T
jt
-
V
bb
I
L(off)
V
OUT(OL)
V
ON(SC)
min typ max
--
--
4.0
10
--
19
A
--
--
--
59 -- 75 V
150 -- -- °C
-- 10 -- K
-- -- 32 V
-- 6 --
A
µ
2.4 3 4 V
V
-- 2.5 --
)
6
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Semiconductor Group 4
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