Siemens BTS141 Datasheet
HITFETBTS 141
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
Product Summary
Drain source voltage
On-state resistance
• Thermal Shutdown
• Overload protection
• Short circuit protection
Nominal load current A
Clamping energy mJ
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
28
25
12
4000
V60
mΩ
ACurrent limit
N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions.
V
bb
LOAD
1
IN
ESD
Semiconductor Group
dv/dt
limitation limitation
Overload
protection
Current
Over-
temperature
protection
Overvoltage
protection
Short circuit
Short circuit
protection
protection
Page 1
Drain
Source
HITFET
2
3
+
M
13.07.1998
Maximum Ratings at Tj = 25 °C unless otherwise specified
BTS 141
Parameter
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current
-0.2V ≤
V
IN
V
≤ 10V
IN
< -0.2V or
V
IN
> 10V
1)
Operating temperature
Storage temperature
Power dissipation
T
= 25 °C
C
Unclamped single pulse inductive energy
I
D(ISO)
= 12 A
Electrostatic discharge voltage (Human Body Model)
Symbol UnitValue
V
DS
V
DS(SC)
I
IN
60 V
32
no limit
I
|
IN
T
j
T
P
E
V
stg
tot
AS
ESD
- 55 ... +150
149 W
4000 mJ
3000 V
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection
V
=low or high;
IN
= 400 ms,
t
d
t
= 400 ms,
d
R
= 2 Ω,
I
R
= 2 Ω,
I
V
=13.5 V
A
V
LoadDump
I
=0,5*12A
D
I
= 12A
D
2)
=
V
+
V
A
S
V
LD
100
84
DIN humidity category, DIN 40 040 E
| ≤ 2
mA
°C- 40 ... +150
V
IEC climatic category; DIN IEC 68-1 40/150/56
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB:
1
A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
Loaddump
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
3)
Page 2
R
R
R
thJC
thJA
thJA
0.84 K/W
75
45
13.07.1998
Electrical Characteristics
BTS 141
Parameter
Characteristics
T
= - 40 ...+ 150°C,
j
V
= 32 V,
DS
I
= 2,7 mA
D
T
j
Input current - normal operation,
V
= 10 V
IN
Input current - current limitation mode,
V
= 10 V
IN
Input current - after thermal shutdown,
V
= 10 V
IN
I
= 10 mA
D
= -40...+150 °C,
V
= 0 V
IN
I
<
D
I
D(lim)
I
I
:
=
I
D
=0 A:
D
D(lim)
Input holding current after thermal shutdown
T
= 25 °C
j
T
= 150 °C
j
Symbol UnitValues
60
-Off state drain current
1.3Input threshold voltage
-
-
1000
:
V
DS(AZ)
I
DSS
V
IN(th)
I
IN(1)
I
IN(2)
I
IN(3)
I
IN(H)
500
300
max.typ.min.at Tj=25°C, unless otherwise specified
-Drain source clamp voltage
-
73 V
20 µA
1.7 2.2
35 100 µA
270
2500
-
-
500
4000
-
-
V
On-state resistance
I
= 12 A,
D
I
= 12 A,
D
V
IN
V
IN
= 5 V,
= 5 V,
On-state resistance
I
= 12 A,
D
I
= 12 A,
D
V
= 10 V,
IN
V
IN
V
IN
V
DS
= 10 V,
= 10 V,
= 0.5 V,
Semiconductor Group
T
= 25 °C
j
T
= 150 °C
j
T
= 25 °C
j
T
= 150 °C
j
T
C
= 85 °C
Page 3
R
DS(on)
R
DS(on)
I
D(ISO)
-
-
-
-
12Nominal load current (ISO 10483)
31
52
25
45
-
34
68
28
56
- A
mΩ
13.07.1998
Loading...