Siemens BTS100 Datasheet
Smart Highside Power Switch
TEMPFET
Features
● P channel
● Enhancement mode
● Temperature sensor with thyristor characteristic
● The drain pin is electrically shorted to the tab
BTS 100
Pin 1 2 3
GDS
Type
V
DS
I
D
R
DS(on)
Package Ordering Code
BTS 100 – 50 V – 8 A 0.3 Ω TO-220AB C67078-A5007-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage
Drain-gate voltage,
R
= 20 kΩ V
GS
Gate-source voltage
T
Continuous drain current,
= 30 °C I
C
ISO drain current
T
= 85 ˚C, VGS = 10 V, VDS = 0.5 V
C
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
= 25 °C I
C
T
= – 55 ... + 150 °C
j
T
= – 55 ... + 150 °C
j
Power dissipation
Operating and storage temperature range
V
DS
DGR
V
GS
D
I
D-ISO
D puls
I
SC
P
SCmax
P
tot
T
j
, T
stg
– 50 V
– 50
± 20
– 8.0 A
– 1.5
– 32
– 25
500 W
40
– 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
R
R
th JC
th JA
≤ 3.1
≤ 75
Semiconductor Group 1
K/W
04.96
BTS 100
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= 0, ID = – 0.25 mA
GS
Gate threshold voltage
V
= V
, I
GS
DS
= – 1 mA
D
Zero gate voltage drain current
V
= 0 V, VDS = – 50 V
GS
T
= 25 °C
j
T
= 150 °C
j
Gate-source leakage current
V
= – 20 V, VDS = 0
GS
T
= 25 °C
j
T
= 150 °C
j
Drain-source on-state resistance
V
= – 10 V, ID = – 5 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max
, ID = – 5 A
Input capacitance
V
= 0, VDS = – 25 V, f = 1 MHz
GS
Output capacitance
V
= 0, VDS = – 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = – 25 V, f = 1 MHz
GS
Turn-on time
V
= – 30 V, VGS = – 10 V, ID = – 2.9 A,
CC
R
= 50 Ω
GS
Turn-off time t
V
= – 30 V, VGS = – 10 V, ID = – 2.9 A,
CC
R
= 50 Ω
GS
t
, (ton = t
on
, (t
off
off
= t
d(on)
d(off)
+ tr)
+ tf)
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
– 50 – –
– 2.5 – 3.0 – 3.5
µA
–
–
–
–
– 1
– 100
– 10
– 2
– 10
– 300
– 100
– 4
nA
µA
Ω
– 0.25 0.3
S
1.5 2.3 4.0
pF
– 900 1200
– 350 550
– 130 230
–2030ns
–6095
–7090
–5575
Semiconductor Group 2
BTS 100
Electrical Characteristics (cont’d)
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous source current
Pulsed source current
Diode forward on-voltage
I
= – 16 A, VGS = 0
F
Reverse recovery time
I
= IS, diF/dt = – 100 A/µs, VR = – 30 V
F
Reverse recovery charge
I
= IS, diF/dt = – 100 A/µs, VR = – 30 V
F
Temperature Sensor
Forward voltage
I
= – 10 mA, Tj = – 55 ... + 150 °C
TS(on)
Sensor override, tp≤ 100 µs
T
= – 55 ... + 160 °C
j
Forward current
T
= – 55 ... + 150 °C
j
Sensor override, tp≤ 100 µs
T
= – 55 ... + 160 °C
j
V
Holding current,
= – 5 V, Tj = 25 °C
TS(off)
T
= 150 °C
j
Switching temperature
V
= – 5 V
TS
Turn-off time
V
= – 5 V, I
TS
TS(on)
= – 2 mA
I
S
I
SM
V
SD
t
rr
Q
V
TS(on)
I
TS(on)
I
H
T
TS(on)
t
off
– – – 8.0 A
– – – 32
V
– – 1.0 – 1.7
ns
–90–
rr
µC
– 0.23 –
V
–
–
– 1.4
–
– 1.5
– 10
mA
–
–
– 0.05
– 0.05
–
–
– 0.1
– 0.2
– 10
– 600
– 0.5
– 0.3
°C
150 – –
µs
0.5 – 2.5
Semiconductor Group 3
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