Siemens BSS87 Datasheet

BSS 87

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th)

= 0.8...2.0V

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type

V

DS

I

D

R

DS(on)

Package Marking

BSS 87 240 V 0.29 A 6 Ω SOT-89 KA

Type Ordering Code Tape and Reel Information

BSS 87 Q67000-S506 E6327

Maximum Ratings
Parameter Symbol Values Unit

Drain source voltage
Drain-gate voltage

R

= 20 k

GS

Ω

Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current

T

= 23 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

V

DS

V

DGR

V

GS

V

gs

I

D

I

Dpuls

P

tot

240 V

240

±

14

± 20

A

0.29

1.16
W

1

Semiconductor Group 1 Sep-18-1996

BSS 87

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air

T
T
R

j
stg

thJA

-55 ... + 150 °C

-55 ... + 150

≤

125 K/W
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

V

(BR)DSS

V

240 - -

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V
V
V

DS
DS
DS

= 240 V,
= 240 V,
= 60 V,

V

V
V

GS

= 0 V,

GS

= 0 V,

GS

= 0 V,

T

= 25 °C

j

T

= 125 °C

j

T

= 25 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V
V

GS
GS

= 10 V,
= 4.5 V,

I

= 0.29 A

D

I

= 0.29 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

0.8 1.5 2

-

-

-

0.1
10

-

1
100

0.2

- 1 10

-

-

3
4

6
10

µA

nA

Ω

Semiconductor Group 2 Sep-18-1996

BSS 87

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 0.29 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 0.28 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.14 0.33 ­pF

- 115 155

- 15 25

- 8 12
ns

- 6 9

Rise time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 0.28 A

D

I

= 0.28 A

D

I

= 0.28 A

D

t

r

t

d(off)

t

f

- 10 15

- 33 45

- 22 30

Semiconductor Group 3 Sep-18-1996