PNP Silicon AF Transistors BC 856 ... BC 860
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type Marking
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Ordering Code
(tape and reel)
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.96
Maximum Ratings
BC 856 ... BC 860
Parameter Symbol
BC 856
Collector-emitter voltage V
CE0 65 V
Collector-base voltage VCB0 80
Collector-emitter voltage V
Emitter-base voltage V
CES 80 50 30
EB0
555
Collector current IC mA
Peak collector current ICM
Peak base current IBM
Peak emitter current IEM
Total power dissipation, TS =71 ˚C Ptot mW
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
Values
BC 857
BC 860
45
50
100
200
200
200
330
150
BC 858
BC 859
30
30
Unit
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 310 K/W
Junction - soldering point Rth JS ≤ 240
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
1)
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 856 ... BC 860
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
C = 10 µA BC 856
BC 857, BC 860
(BR)CB0
V
BC 858, BC 859
Collector-emitter breakdown voltage
C = 10 µA, VBE = 0 BC 856
BC 857, BC 860
(BR)CES
V
BC 858, BC 859
V
Emitter-base breakdown voltage
E = 1 µA
(BR)EB0 5––
65
45
30
80
50
30
80
50
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
Collector cutoff current
CB = 30 V
V
CB = 30 V, TA = 150 ˚C
V
C = 10 µA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
C = 2 mA, VCE = 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
I
h
CB0
FE
–
–
–
–
–
125
220
420
1
–
140
250
480
180
290
520
15
4
–
–
–
250
475
800
nA
µA
–DC current gain
Collector-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter voltage
C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V
1)
1)
V
V
V
CEsat
BEsat
BE(on)
–
–
–
–
600
–
75
250
700
850
650
–
mV
300
650
–
–
750
820
Pulse test: t≤ 300 µs, D = 2 %.
Semiconductor Group 3
Electrical Characteristics
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
BC 856 ... BC 860
UnitValuesParameter Symbol
min. typ. max.
f
T – 250 –
C = 20 mA, VCE = 5 V, f = 100 MHz
C
obo –3–
CB = 10 V, f = 1 MHz
V
Input capacitance
CB = 0.5 V, f = 1 MHz
V
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Open-circuit reverse voltage transfer ratio
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
C
ibo –8–
11e
h
–
–
–
12e
h
–
–
–
21e
h
–
–
–
2.7
4.5
8.7
1.5
2.0
3.0
200
330
600
–
–
–
–
–
–
–
–
–
MHzTransition frequency
pFOutput capacitance
kΩShort-circuit input impedance
10
–Short-circuit forward current transfer ratio
–4
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f= 30 Hz … 15 kHz BC 859
BC 860
f= 1 kHz,
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
∆ f = 200 Hz BC 859
BC 860
22e
h
–
–
–
18
30
60
–
–
–
F
–
–
–
–
n – – 0.110
V
1.2
1.0
1.0
1.0
4
3
4
4
µSOpen-circuit output admittance
dBNoise figure
µVEquivalent noise voltage
f= 10 Hz … 50 Hz
BC 860
Semiconductor Group 4
BC 856 ... BC 860
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance C
EB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency f
CE = 5 V
V
T = f (IC)
Semiconductor Group 5
BC 856 ... BC 860
Collector cutoff current ICB0 = f (TA)
CB = 30 V
V
Collector-emitter saturation voltage
C = f (VCEsat), hFE = 20
I
DC current gain h
CE = 5 V
V
FE = f (IC)
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 20
Semiconductor Group 6
BC 856 ... BC 860
h parameter he = f (IC) normalized
CE = 5 V
V
h parameter he = f (VCE) normalized
C =2mA
I
Noise figure F = f (V
C = 0.2 mA, RS = 2 kΩ, f = 1 kHz
I
CE)
Noise figure F = f (f)
IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V
Semiconductor Group 7
BC 856 ... BC 860
Noise figure F = f (IC)
CE = 5 V, f = 120 Hz
V
Noise figure F = f (IC)
CE = 5 V, f = 1 kHz
V
Noise figure F = f (I
CE = 5 V, f = 10 kHz
V
C)
Semiconductor Group 8
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