Siemens BC850CW, BC850BW, BC849CW, BC848CW, BC849BW Datasheet

NPN Silicon AF Transistor BC 846 W ... BC 850 W

Features

● For AF input stages and driver applications

● High current gain

● Low collector-emitter saturation voltage

● Low noise between 30Hz and 15 kHz

● Complementary types: BC 856 W, BC 857 W,

BC 858 W,BC 859 W,
BC 860 W (PNP)

Type Marking Ordering code

(tape and reel)

BC 846 AW
BC 846 BW
BC 847 AW
BC 847 BW
BC 847 CW
BC 848 AW
BC 848 BW
BC 848 CW
BC 849 BW
BC 849 CW
BC 850 BW
BC 850 CW

1 As
1 Bs
1 Es
1 Fs
1 Gs
1 Js
1 Ks
1 Ls
2 Bs
2 Cs
2 Fs
2 Gs

Q62702-C2319
Q62702-C2279
Q62702-C2304
Q62702-C2305
Q62702-C2306
Q62702-C2307
Q62702-C2308
Q62702-C2309
Q62702-C2310
Q62702-C2311
Q62702-C2312
Q62702-C2313

Pin Configuration
123

BEC

Package

SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323
SOT 323

Semiconductor Group 1 04.96

BC 846W ... BC 850W

Maximum Ratings

BC846W BC 847 W

Description Symbol Unit

BC 849 W BC 848 W
BC 840 W

Collector-emitter voltage V

CEO V

Collector-base voltage VCBO V
Collector-emitter voltage VCES V

Emitter-base voltage V
Collector current I

EBO V

C mA

Collector peak current ICM mA

tot mW

Total power dissipation, T

S =115 ˚C

Junction temperature T
Storage temperature range T

P

j ˚C
stg –65 to 150 ˚C

65 45 30
80 50 30
80 50 30
665

100
200
250
150

Thermal Resistance

Junction - ambient

1)

Rth JA ≤ 240 K/W

Junction - soldering point Rth JS ≤ 105 K/W

1)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu.

Semiconductor Group 2

Characteristic at TA = 25 ˚C, unless otherwise specified.

I

I

I

I

I

I
I

I

I
I

I
I

DC Characteristics

BC 846W ... BC 850W

UnitRatingsDescription Symbol

min. typ. max.

(BR)CEO

V

C = 10 mA BC 846 W

BC 847 W, BC 850 W
BC 848 W, BC 849 W

Collector-base breakdown voltage

C = 100 µA BC 846 W

BC 847 W, BC 850 W

1)

(BR)CBO

V

BC 848 W, BC 849 W

(BR)CBO

Collector-emitter breakdown voltage

C = 10 µA, VBE = 0 BC 846 W

V

BC 847 W, BC 850 W
BC 848 W, BC 849 W

(BR)EBO

V

E = 10 µA BC 846 W, BC 847 W

BC 848 W, BC 849 W
BC 850

CBO

Collector-base cutoff current

CB = 30 V

V

CB = 30 V, TA = 150 ˚C

V

I

65
45
30

80
50
30

80
50
30

–
–
–

–
–
–

–
–
–

6
5–

–

–
–

–
–

–
–
–

–
–
–

–
–
–

–
–

15
5

VCollector-emitter breakdown voltage

V

V

VEmitter-base breakdown voltage

nA
µA

V

V

V

FE

CEsat

CEsat

CEsat

–
–
–

110
200
420

–
–

–
–

580
–

140
250
480

180
290
520

90
900

700
900

660
–

–
–
–

220
450
800

250
650

–
–

700
770

DC current gain

C = 10 µA, VCE = 5 V BC 846 AW ... BC 848 AW

BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW

C = 2 mA, VCE = 5 V BC 846 AW ... BC 848 AW

Collector-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter saturation voltage

C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA

Base-emitter voltage

C = 2 mA, VCE = 0.5 mA
C = 10 mA, VCE = 5 mA

BC 846 BW ... BC 850 BW
BC 847 CW ... BC 850 CW

1)

1)

1)

–h

mV

mV

mV

1)

Pulse test : t ≤ 300 µs, D= 2 %.

Semiconductor Group 3