Siemens BC850B, BC848C, BC849C, BC848B, BC850C Datasheet
...
NPN Silicon AF Transistors BC 846 ... BC 850
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
Type Marking
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
Ordering Code
(tape and reel)
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.96
Maximum Ratings
BC 846 ... BC 850
Parameter Symbol
BC 846
Collector-emitter voltage V
CE0 65 V
Collector-base voltage VCB0 80
Collector-emitter voltage V
Emitter-base voltage V
CES 80 50 30
EB0
665
Collector current IC mA
Peak collector current ICM
Peak base current IBM
Peak emitter current IEM
Total power dissipation, TS =71 ˚C Ptot mW
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
Values
BC 847
BC 850
45
50
100
200
200
200
330
150
BC 848
BC 849
30
30
Unit
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 310 K/W
Junction - soldering point Rth JS ≤ 240
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
at TA = 25 ˚C, unless otherwise specified.
DC characteristics
BC 846 ... BC 850
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA BC 846
BC 847, BC 850
BC 848, BC 849
Collector-base breakdown voltage
C = 10 µA BC 846
BC 847, BC 850
(BR)CB0
V
BC 848, BC 849
Collector-emitter breakdown voltage
C = 10 µA, VBE = 0 BC 846
BC 847, BC 850
(BR)CES
V
BC 848, BC 849
(BR)EB0
Emitter-base breakdown voltage
E = 1 µA BC 846, BC 847
BC 848, BC 849, BC 850
Collector cutoff current
CB = 30 V
V
CB = 30 V, TA = 150 ˚C
V
C = 10 µA, VCE = 5 V
V
I
h
CB0
FE
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
C = 2 mA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
Collector-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
1)
1)
V
V
CEsat
BEsat
65
45
30
80
50
30
80
50
30
6
5
–
–
–
–
–
110
200
420
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
140
250
480
180
290
520
90
200
700
900
–
–
–
–
–
–
–
–
–
–
–
15
5
–
–
–
220
450
800
250
600
–
–
VCollector-emitter breakdown voltage
nA
µA
–DC current gain
mV
Base-emitter voltage
C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V
1)
Pulse test: t≤ 300 µs, D = 2 %.
Semiconductor Group 3
V
BE(on)
580
–
660
–
700
770
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