Sharp PC81710NSZ, PC81711NSZ, PC81712NSZ, PC81713NSZ, PC81715NSZ Datasheet
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PC8171XNSZ Series
PC8171X NSZ Series
■ Features
1. Low input current type(IF=0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/µs)
3. Compact dual-in line package
4. Isolation voltage(Viso:5kVrms)
5. Recognized by UL, file No. E64380
■ Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■ Rank Table
Model No. Rank mark Ic (mA) Conditions
PC81710NSZ
PC81711NSZ
PC81712NSZ
PC81713NSZ
PC81715NSZ
PC81716NSZ
PC81718NSZ
A, B, C or no mark
A
B
C
A or B
B or C
A, B or C
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Forward current
*1
Input
Output
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*2
Isolation voltage
*3
Soldering temperature
0.5 to 3.0
0.6 to 1.5
0.8 to 2.0
1.0 to 2.5
0.6 to 2.0
I
F=0.5mA
VCE=5V
a=25°C
T
0.8 to 2.5
0.6 to 2.5
(Ta=25°C)
IF
IFM
VR
10
200
6
P 15
VCEO
ECO
V
IC
PC
P
tot
Topr
T
stg
Viso kVrms
Tsol
70
6
50
150
170
−30 to +100
−55 to +125
5
260
mA
mA
mW
mA
mW
mW
°C
°C
°C
V
V
V
Low Input Current Type
Photocoupler
■ Outline Dimensions
Anode mark
±0.3
±0.2
1.2
0.6
1
2
θ
8 1 7 1
±0.5
6.5
7.62
Epoxy resin
θ : 0 to 13°
1
2
4
±0.5
3
4.58
±0.25
2.54
±0.3
±0.5
±0.1
0.26
θ
Internal connection diagram
2.7
1
4
2
3
3
4
AnodeAnode
Cathode
Emitter
Collector
4.58
(Unit : mm)
±0.5
0.5
±0.5
±0.5
±0.1
TYP.
3.5
0.5
3.0
Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC8171XNSZ Series
■ Electro-optical Characteristics
Parameter Symbol
Forward voltage
Reverse current
InputOutputTransfer characteristics
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Response time
*1
Common mode rejection voltage
*1 Refer to Fig.1.
Rise time
Fall time
F
V
IR
Ct
ICEO
BVCEO
BVECO
IC
VCE (sat)
RISO
Cf
tr
tf
CMR
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
I
F=0mA, VCC=9V, Vnp=100mV
Conditions
I
F=10mA
R=4V
V
V=0, f=1kHz
CE=50V, IF=0
V
I
C=0.1mA, IF=0
I
E=10µA, IF=0
F=0.5mA, VCE=5V
I
F=10mA, IC=1mA
I
DC500V 40 to 60%RH
V=0, f=1MHz
CE=2V, IC=2mA, RL=100Ω
V
Fig.1 Test Circuit for Common Mode Rejection Voltage
V
CM
V
R
L
V
V
np
CM
CC
V
CM :
pulse
=470Ω
R
L
=9V
V
CC
High wave
VO
1) V
capacitance between primary and secondary side.
1)
(Vcp Nearly = dV/dt×Cf×RL)
: Voltage which is generated by displacement current in floating
cp
(Ta=25°C)
MIN.
−
−
−
−
70
6
0.5
−
5×10
−
−
−
10
(dV/d
t)
V
cp
TYP. MAX. Unit
1.2
−
30
−
−
−
−
−
10
1×10
11
0.6
4
3
−
1.4
10
250
100
3.0
0.2
1.0
18
18
V
V
µA
pF
nA
−
−
V
V
mA
V
−
Ω
pF
µs
µs
−
kV/µs
np
Fig.2 Forward Current vs. Ambient
Temperature
10
(mA)
F
5
Forward current I
0
−30 0 25 50 75 100 125
Ambient temperature Ta (°C)
Fig.3
Diode Power Dissipation vs. Ambient
Temperature
15
10
5
Diode power dissipation P (mW)
0
−30 0 25 50 75 100 125
Ambient temperature Ta (°C)
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