Sharp LH5164AT-80L, LH5164AT-10L, LH5164AN-80L, LH5164AN-10L, LH5164AHT-10L Datasheet
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LH5164A/AH
CMOS 6 4K (8 K × 8) S tatic RA M
FEATURES
•• 8,192 × 8 bit orga niza ti on
•• Access times: 80/10 0 n s (MAX.)
•• Low-pow er consumption :
Operating :
303 mW (MAX.) LH5164A/D/N
@ 80 ns
248 mW (MAX.) LH5164A/D/N/T
@ 100 ns
275 mW (MAX.) LH5164AH/HD/H N/HT
@ 100 ns
Standby:
LH5164A/D/N/T: 5.5 µW (MAX.)
LH5164AH/HD/HN/HT:
T
A
≤ 85°C: 16.5 µW (MAX.)
T
A
≤ 70°C: 5.5 µW (MAX.)
•• Fully-static operatio n
•• Three-state outputs
•• Singl e +5 V p owe r su ppl y
•• TTL compatible I/O
•• Wide temp erature ra nge avail abl e
LH5164 A: -10 to +70°C
LH5164AH: -40 to +85°C
•• Packages:
28-pi n , 600 -mil DIP
28-pi n , 300 -mil SK-DIP
28-pi n , 450 -mil S OP
28-pi n , 8 × 13 mm
2
TSOP (Type I)
DESCRIPTION
The LH5164A/AH ar e static RAMs organized as 8,192
× 8 bits. It is f abricated using silicon-gate CMOS pr ocess technology.
The LH5164AH is designed for wide temperature
range from -40 to +85°C.
PIN CONNECTIONS
1
2
3
4
7
8
A
2
A
5
26
25
24
23
22
21
18
15
A
7
A
6
5
6
A
3
A
4
20
19
A
12
GND
A
8
A
11
A
10
CE
1
9
10
11
28
27
WE
A
1
V
CC
12
17
16
A
0
I/O
1
A
9
13
14
NC
OE
I/O
2
I/O
3
I/O
7
I/O
6
I/O
5
I/O
4
I/O
8
CE
2
5164A-1
TOP VIEW
28-PIN DIP
28-PIN SK-DIP
28-PIN SOP
Figure 1. Pin Connections for DIP, SK-DIP,
and SOP Packages
2
3
4
5
6
9
10
7
8
A
11
11
1
28
27
26
25
22
21
24
23
20
19
A
10
28-PIN TSOP (Type I)
12
13
14
17
16
18
15
OE
A
8
A
9
CE
2
WE
A
12
NC
I/O
3
I/O
2
A
1
I/O
8
CE
1
I/O
6
I/O
7
GND
I/O
5
I/O
4
I/O
1
A
0
5164A-8
V
CC
A
7
A
6
A
5
A
4
A
3
A
2
TOP VIEW
Figure 2. Pin Connect ions for TSOP Package
1
TRUTH TABLE
CE
1
CE
2
WE OE MODE I/O1 - I/O
8
SUPPLY CURRENT NOTE
H X X X Deselect High-Z Standby (ISB)1
X L X X Deselect High-Z Standby (I
SB
)1
L H L X Write D
IN
Operating (ICC)1
L H H L Read D
OUT
Operating (ICC)
L H H H Output disable High-Z Operating (I
CC
)
NOTE:
1. X = H or L
I/O
8
A
8
A
9
A
12
25
24
2
11
15
18
5164A-2
MEMORY
ARRAY
(256 x 256)
13
17
12
16
A
7
3
ROW ADDRESS
BUFFERS
WE
A
6
4
A
5
5
27
A
4
6
ROW DECODERS
I/O
CIRCUITS
COLUMN DECODERS
V
CC
GND
OE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
2
I/O
1
22
19
COLUMN ADDRESS
BUFFER
10
A
0A1A2A10
21
9
8
28
14
A
3
7
CE
1
20
26
CE
2
DATA CONTROL
A
11
23
NOTE: Pin numbers apply to 28-pin DIP, SK-DIP, or SOP.
Figure 3. LH5164A/AH Bl ock Diagram
PIN DESCRIPTION
SIGNA L PIN N AME
A0 - A
12
Addre ss inputs
CE1 - CE
2
Chip Ena ble in put
WE Write E na ble inp ut
OE Outpu t E nab le inp ut
SIGNAL PIN NAME
I/O1 - I/O
8
Data i npu ts and ou tpu ts
V
CC
Power sup ply
GND Ground
NC No connec tion
LH5164A /AH CMOS 64K (8 K × 8) Static RAM
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
80 ns 100 ns
UNIT NOTE
RATING RATING
Suppl y v olt age V
CC
-0.3 to +7.0 -0.3 to +7.0 V 1
Input vol tage V
IN
-0.3 to VCC + 0.3 -0.3 to VCC + 0.3 V 1, 2
Operat ing te mpe ratu re Topr
-10 to +70 -10 to +70
°C
3
-40 to +85 °C4
Storage temperature Tstg -55 to +150 -55 to +150
°C
NOTES:
1. The maximum applicable voltage on any pin with respect to GND.
2.
V
IN
(MIN.) = -3.0 V f or pulse width ≤50 ns.
3. LH5164A/AD/AN/ AT
4. LH5164AH/AHD/AHN/AHT
RECOMMENDED OPERATING CONDITIONS
1
PARAMETER SYMBOL
80 ns 100 ns
UNIT NOTE
MIN. TY P. MAX. MIN. TYP. MAX.
Suppl y v olt age V
CC
4.5 5.0 5.5 4.5 5.0 5.5 V
Input vol tage
V
IH
2.2 VCC + 0.3 2.2 VCC + 0.3 V
V
IL
-0.3 0.8 -0.3 0.8 V 2
NOTES:
1.
T
A
= -10 to +70°C (LH5164A/AD/AN/AT), TA = -40 to +85°C (LH5164AH/ AHD/AHN/AHT).
2.
V
IN
(MIN.) = -3.0 V f or pulse width ≤50 ns.
DC CHARACTERISTICS 1 (VCC = 5 V ±10%)
PARAMETER SYMBOL CONDITI ONS MIN. MAX. UNIT NOTE
Input lea kag e c urr ent
I
LI
VIN = 0 to V
CC
-1.0 1.0 µA
Output le aka ge
curren t
I
LO
CE1 = VIH or CE2 = V
IL
or OE = VIH or WE = V
IL
V
I/O
= 0 to V
CC
-1.0 1.0 µA
Operat ing cu rre nt I
CC
CE1 = VIL, VIN = VIL or V
IH
CE2 = VIH, Outputs open
t
CYCLE
=
80 ns
55 mA
CE1 = VIL, VIN = VIL or V
IH
CE2 = VIH, Outputs open
t
CYCLE
=
100 ns
45
mA
2
50 3
CE1 = VIL, VIN = 0.2 V or
V
CC
- 0.2 V
CE
2
= VIH, Outputs open
t
CYCLE
=
1.0 µs
10
Standb y c urr ent I
SB1
CE1 = V
IH or CE2
= V
IL
5mA
CE2 ≤ 0.2 V or
CE1 ≥ VCC - 0.2 V
T
A
≤ 70°C 1.0 µA 2, 3, 4
T
A
≤ 85°C 3.0 µA 3, 4
Output vo lta ge
V
OL
IOL = 2.1 mA 0.4 V
V
OH
IOH = -1 mA 2.4 V
NOTES:
1.
T
A
= -10 to 70°C (LH5164A/AD/ AN/AT), TA = -40 to +85°C (LH5164AH/ AHD/AHN/AHT)
2. LH5164A/AD/AN/ AT
3. LH5164AH/AHD/AHN/AHT
4.
CE
2
should be ≥ VCC – 0.2 V or ≤ 0.2 V wh en CE1 ≥ VCC – 0. 2 V
CMOS 64K (8K × 8) Static RAM LH5164A/AH
3
AC CHARACTERISTICS
1
(1) READ CYCLE (VCC = 5 V ±10%)
PARAMETER SYMBOL
80 ns 100 ns
UNIT NOTE
MIN. MAX. M IN. MAX.
Read c yc le t ime t
RC
80 100 ns
Addres s a cc ess ti me t
AA
80 100 ns
Chip e nab le
acces s t ime
(
CE1)t
AC E 1
80 100 ns
(CE
2
)t
AC E 2
80 100 ns
Output en abl e a cce ss tim e t
OE
40 40 ns
Output ho ld time t
OH
10 10 ns
Chip e nab le to
output in Lo w-Z
(
CE1)t
LZ1
10 10 ns 1
(CE
2
)t
LZ2
10 10 ns 1
Output en abl e t o ou tpu t i n
Low-Z
t
OLZ
5 5 ns 1
Chip e nab le to
output in Hi gh- Z
(
CE1)t
HZ1
0 30 0 30 ns 1
(CE
2
)t
HZ2
0 30 0 30 ns 1
Output disable to outp ut in
High-Z
t
OHZ
0 20 0 20 ns 1
(2) WRITE CYCLE (VCC = 5 V ±10%)
PARAMETER SYMBOL
80 ns 100 ns
UNIT NOTE
MIN. MAX. MIN. M AX.
Write c ycl e t ime t
WC
80 100 ns
Chip e nab le to end of wri te t
CW
70 80 ns
Addres s v al id t o e nd of writ e t
AW
70 80 ns
Addres s s etu p t ime t
AS
00ns
Write p uls e w idt h t
WP
60 60 ns
Write re co ver y ti me t
WR
00ns
Data v ali d t o e nd of w rit e t
DW
40 40 ns
Data h old ti me t
DH
00ns
Output ac tiv e f rom end of wri te t
OW
10 10 ns 2
WE to out put in Hig h-Z t
WZ
030030ns2
OE to out put in Hig h-Z t
OHZ
020020ns2
NOTES:
1.
T
A
= -10 to +70°C (LH5164A/AD/AN/AT), TA = -40 to +85°C (LH5164AH/ AHD/AHN/AHT)
2.
Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition
from steady state levels into the test load.
AC TEST CONDITIONS
PARAMETER MODE NOTE
Input voltage amplitude 0.6 to 2.4 V
Input rise/fall time 10 ns
Timing re fer enc e l eve l 1.5 V
Output load conditions 1TTL + CL (100 pF) 1
NOTE:
1. In cludes scope and jig capacitance.
LH5164A /AH CMOS 64K (8 K × 8) Static RAM
4
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