Sharp LH5164A, LH5164AH Datasheet
LH5164A/AH
CMOS 6 4K (8 K × 8) S tatic RA M
FEATURES
•• 8,192 × 8 bit orga niza ti on
•• Access times: 80/10 0 ns (MAX.)
•• Low-pow er consumption :
Operating :
303 mW (MAX.) LH5164A/D/N
@ 80 ns
248 mW (MAX.) LH5164A/D/N/T
@ 100 ns
275 mW (MAX.) LH5164AH/HD/H N/HT
@ 100 ns
Standby:
LH5164A/D/N/T: 5.5 µW (MAX.)
LH5164AH/HD/HN/HT:
T
≤ 85°C: 16.5 µW (MAX.)
A
≤ 70°C: 5.5 µW (MAX.)
T
A
•• Fully-static operatio n
PIN CONNECTIONS
28-PIN DIP
28-PIN SK-DIP
28-PIN SOP
1
NC
2
A
12
3
A
7
A
4
6
A
5
5
A
6
4
A
7
3
8
A
2
A
9
1
A
10
0
I/O
11
1
12
I/O
2
13
I/O
3
14
GND
Figure 1. Pin Connections for DIP, SK-DIP,
and SOP Packages
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
WE
CE
A
A
A
OE
A
CE
I/O
I/O
I/O
I/O
I/O
CC
2
8
9
11
10
1
8
7
6
5
4
TOP VIEW
5164A-1
•• Three-state outputs
•• Singl e +5 V p owe r su ppl y
•• TTL compatible I/O
•• Wide temp erature ra nge avail abl e
LH5 164A: -10 to +70°C
LH5164AH: -40 to +85°C
•• Packages:
28-pi n , 600 -mil DIP
28-pi n , 300 -mil SK-DIP
28-pi n , 450 -mil S OP
28-pi n , 8 × 13 mm
2
TSOP (Type I)
DESCRIPTION
The LH5164A/ AH are static RAMs organized as 8,192
× 8 bits. It is f abricated using silicon-gate CMOS pr ocess technology.
The LH5164AH is designed for wide temperature
range from -40 to +85°C.
28-PIN TSOP (Type I)
OE
A
CE
WE
V
NC
A
1
2
11
A
3
9
4
A
8
5
2
6
7
CC
8
9
12
A
10
7
A
11
6
12
A
5
13
A
4
14
A
3
TOP VIEW
28
27
I/O
26
I/O
25
I/O
24
I/O
23
22
21
GND
20
I/O
19
I/O
18
17
16
15
A
CE
I/O
I/O
A
A
A
Figure 2. Pin Connect ions for TSOP Package
10
1
8
7
6
5
4
3
2
1
0
1
2
5164A-8
1
LH5164A /AH CMOS 64K (8 K × 8) Static RAM
A
7
3
A
6
4
A
5
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
5
A
4
6
A
3
7
A
25
8
A
24
9
A
2
12
11
1
12
2
13
3
15
4
16
5
17
6
18
7
19
8
BUFFERS
ROW ADDRESS
DATA CONTROL
ROW DECODERS
MEMORY
ARRAY
(256 x 256)
I/O
CIRCUITS
COLUMN DECODERS
COLUMN ADDRESS
BUFFER
V
28
CC
14
GND
27
WE
22
OE
26
CE
2
20
CE
1
9
NOTE: Pin numbers apply to 28-pin DIP, SK-DIP, or SOP.
10
A
0A1A2A10
21
8
23
A
11
Figure 3. LH5164A/AH Bl ock Diagram
PIN DESCRIPTION
SIGNA L PIN N AME
A0 - A
12
CE1 - CE
Addre ss inputs
Chip Ena ble in put
2
WE Write E na ble inp ut
OE Outpu t E nab le inp ut
SIGNAL PIN NAME
I/O1 - I/O
V
CC
Data i npu ts and ou tpu ts
8
Power sup ply
GND Ground
NC No connec tion
TRUTH TABLE
CE
1
H X X X Deselect High-Z Standby (ISB)1
X L X X Deselect High-Z Standby (I
L H L X Write D
L H H L Read D
L H H H Output disable High-Z Operating (I
NOTE:
1. X = H or L
CE
2
WE OE MODE I/O1 - I/O
IN
OUT
SUPPLY CURRENT NOTE
8
Operating (ICC)1
Operating (ICC)
)1
SB
)
CC
5164A-2
2
CMOS 64K (8K × 8) Static RAM LH5164A/AH
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
Suppl y v olt age V
Input vol tage V
CC
IN
Operat ing te mpe ratu re Topr
80 ns 100 ns
RATING RATING
-0.3 to +7.0 -0.3 to +7.0 V 1
-0.3 to VCC + 0.3 -0.3 to VCC + 0.3 V 1, 2
-10 to +70 -10 to +70
-40 to +85 °C4
Storage t emperature Tstg -55 to +150 -55 to +150
NOTES:
1. The maximum applicable voltage on any pin with respect to GND.
2.
(MIN.) = -3.0 V f or pulse width ≤50 ns.
V
IN
3. LH5164A/AD/AN/ AT
4. LH5164AH/AHD/AHN/AHT
RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL
Suppl y v olt age V
Input vol tage
NOTES:
1.
T
= -10 to +70°C (LH5164A/AD/AN/ AT), TA = -40 to +85°C (LH5164AH/ AHD/AHN/AHT).
A
2.
(MIN.) = -3.0 V f or pulse width ≤50 ns.
V
IN
CC
V
IH
V
IL
MIN. TY P. MAX. MIN. TYP. MAX.
4.5 5.0 5.5 4.5 5.0 5.5 V
2.2 VCC + 0.3 2.2 VCC + 0.3 V
-0.3 0.8 -0.3 0.8 V 2
80 ns 100 ns
1
UNIT NOTE
°C
3
°C
UNIT NOTE
DC CHARACTERISTICS 1 (VCC = 5 V ±10%)
PARAMETER SYMBOL CONDITI ONS MIN. MAX. UNIT NOTE
Input lea kag e c urr ent
Output le aka ge
curren t
I
LI
I
LO
CE1 = VIL, VIN = VIL or V
CE2 = VIH, Outputs open
CE1 = VIL, VIN = VIL or V
Operat ing cu rre nt I
CC
CE2 = VIH, Outputs open
CE1 = VIL, VIN = 0.2 V or
CE
= VIH, Outputs open
2
Standb y c urr ent I
SB1
CE1 ≥ VCC - 0.2 V
V
Output vo lta ge
NOTES:
1.
T
= -10 to 70°C (LH5164A/AD/ AN/AT), TA = -40 to +85° C (LH5164AH/AHD/AHN/AHT)
A
2. LH5164A/AD/AN/ AT
3. LH5164AH/AHD/AHN/AHT
4.
should be ≥ VCC – 0.2 V or ≤ 0.2 V wh en CE1 ≥ VCC – 0. 2 V
CE
2
OL
V
OH
VIN = 0 to V
CE1 = VIH or CE2 = V
or OE = VIH or WE = V
V
= 0 to V
I/O
V
- 0.2 V
CC
CE1 = V
IH or CE2
CE2 ≤ 0.2 V or
IOL = 2.1 mA 0.4 V
IOH = -1 mA 2.4 V
CC
CC
IH
IH
-1.0 1.0 µA
IL
IL
t
CYCLE
80 ns
t
CYCLE
100 ns
-1.0 1.0 µA
=
=
55 mA
45
50 3
mA
=
t
CYCLE
1.0 µs
= V
IL
T
≤ 70°C 1.0 µA 2, 3, 4
A
T
≤ 85°C 3.0 µA 3, 4
A
10
5mA
2
3
LH5164A /AH CMOS 64K (8 K × 8) Static RAM
AC CHARACTERISTICS
1
(1) READ CYCLE (VCC = 5 V ±10%)
PARAMETER SYMBOL
Read c yc le t ime t
Addres s a cc ess ti me t
(
Chip e nab le
acces s t ime
CE1)t
)t
(CE
2
Output en abl e a cce ss tim e t
Output ho ld time t
(
Chip e nab le to
output in Lo w-Z
CE1)t
(CE
)t
2
Output en abl e t o ou tpu t i n
Low-Z
CE1)t
Chip e nab le to
output in Hi gh- Z
(
(CE
)t
2
Output disable to outp ut in
High-Z
RC
AA
AC E 1
AC E 2
OE
OH
LZ1
LZ2
t
OLZ
HZ1
HZ2
t
OHZ
80 ns 100 ns
MIN. MAX. M IN. MAX.
80 100 ns
80 100 ns
80 100 ns
80 100 ns
40 40 ns
10 10 ns
10 10 ns 1
10 10 ns 1
5 5 ns 1
0 30 0 30 ns 1
0 30 0 30 ns 1
0 20 0 20 ns 1
(2) WRITE CYCLE (VCC = 5 V ±10%)
PARAMETER SYMBOL
Write c ycl e t ime t
Chip e nab le to end of wri te t
Addres s v al id t o e nd of writ e t
Addres s s etu p t ime t
Write p uls e w idt h t
Write re co ver y ti me t
Data v ali d t o e nd of w rit e t
Data h old ti me t
Output ac tiv e f rom end of wri te t
WE to out put in Hig h-Z t
OE to out put in Hig h-Z t
NOTES:
1.
= -10 to +70°C (LH5164A/AD/AN/ AT), TA = -40 to +85°C (LH5164AH/ AHD/AHN/AHT)
T
A
2.
Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition
from steady state levels into the test load.
WC
CW
AW
AS
WP
WR
DW
DH
OW
WZ
OHZ
80 ns 100 ns
MIN. MAX. MIN. M AX.
80 100 ns
70 80 ns
70 80 ns
00ns
60 60 ns
00ns
40 40 ns
00ns
10 10 ns 2
030030ns2
020020ns2
UNIT NOTE
UNIT NOTE
AC TEST CONDITIONS
PARAMETER MODE NOTE
Input voltage amplitude 0.6 to 2.4 V
Input rise/fall time 10 ns
Timing re fer enc e l eve l 1.5 V
Output load conditions 1TTL + CL (100 pF) 1
NOTE:
1. In cludes scope and jig capacitance.
4
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