GP1S55T
GP1S55T
Compact, High Sensing
Accuracy Narrow Gap
Type Photointerrupter
■ Features
1. Compact package (Case height: 8mm
2. High sensing accuracy
(Slit width••• Detector side: 0.15mm,
Emitter side: 0.5mm
)
3. Easy positioning to PWB with positioning
pin
4. PWB direct mounting type
)
■ Applications
1. OA equipment such as FDDs. printers,
facsimiles
2. VCRs , cassette decks
3. Optoelectronic switches, electronic
counters, edge sensors
■ Outline Dimemsions
A-A’ section
(
C1
D
0 - 4.5
(
2.54
Internal connection
diagram
3
4
Slit width of
emitter side
+
0.3
-
0.1
)
0.5
)
4-0.4
2
1
)
5.5
(
Detector center
+
-
(
Unit : mm
5.0
(
11.0
Slit width of detector side
+ 0.3
2.0
- 0
BA
GP1S55
A’B’
0.3
0.1
(
7.4
±
10.2
41
1 Anode
2 Cathode
* Unspecified tolerances
shall be as follows;
Dimensions(d)Tolerance
6.0<d<=18.0 ± 0.2
* ( ): Reference dimensions
2-0.7 2.0
)
0.15
2 - φ 0.7
23
d<=6.0 ± 0.1
B-B’ section
±
0.15
8.0
MIN.
12.0
±
0.05
3 Collector
4 Emitter
0.07
)
)
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Forward current 50 mA
*1
Input
Peak forward current
Reverse voltage 6 V
Power dissipation 75 mW
Collector-emitter voltage 35 V
Output
Emitter-collector voltage 6 V
Collector current 20 mA
Collector power dissipation 75 mW
Operating temperature - 25 to + 85 ˚C
Storage temperature - 40 to + 100 ˚C
*2
Soldering temperature
*1 Pulse width<=100µs, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
I
FM
V
R
1A
P
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
260 ˚C
GP1S55T
■ Electro-optical Characteristics
Parameter
Forward voltage - 1.2 1.4 V
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs.
Ambient Temperature
Peak forward voltage - 3 4 V
Reverse current - - 10 µ A
Collector dark current Collector Current Ic
Collector-emitter saturation
voltage
Rise time - 5 25 µ s
Fall time - 6 30 µ s
)
mA
(
60
50
40
F
30
Response time
Symbol
V
F
V
FM
I
R
I
CEO
V
CE(sat
t
r
t
r
I
F =20mA
I
FM =0.5A
V
R =3V
=20V
V
CE
= 20mA, VCE=5V
1
F
)
I
= 40mA, IC= 0.6mA
F
V
= 2V, IC= 2mA
CE
= 100Ω
R
L
(
Ta = 25˚C
Conditions MIN. TYP. MAX. Unit
1 100 nA
0.6 - - mA
- - 0.4 V
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
120
)
100
mW
(
80
75
60
)
20
Forward current I
10
0
- 25 0 25 50 75 85 100
Ambient temperature T
Fig. 3 Peak Forward Current vs.
Duty Ratio
Pulse width<=100 µs
10
Duty ratio
Ta= 25˚C
-
1
2000
)
1000
mA
(
FM
500
200
100
Peak forward current I
50
20
-
2
52525
10
(˚C
a
40
20
Collector power dissipation Pc
0
)
- 25 0 25 50 75 85 100
Ambient temperature T
(˚C
a
)
Fig. 4 Forward Current vs.
Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
5
2
0
10
1
0
Ta= 75˚C
50˚C
0.5 1 1.5 2 2.5 3
Forward voltage V
25˚C
0˚C
- 25˚C
)
(V
F
GP1S55T
Fig. 5 Collector Current vs.
Forward Current
5
=5V
V
CE
Ta= 25˚C
4
)
mA
(
3
2
Collector current Ic
1
0
10 20 30 40 500
Forward current I
Fig. 7 Collector Current vs.
Ambient Temperature
2
)
mA
(
1
(mA
F
Fig. 6 Collector Current vs.
Collector-emitter Voltage
6
T
= 25˚C
a
5
)
mA
(
4
3
2
Collector current Ic
1
0
)
12 34 50
Collector-emitter voltage V
= 50mA
I
F
40mA
30mA
20mA
10mA
610987
)
(V
CE
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.20
I
= 40mA
F
I
= 0.6mA
)
V
(
)
sat
(
CE
V
C
0.15
Collector current Ic
0
025-25
Ambient temperature T
Fig. 9 Response Time vs.
Load Resistance
100
VCE=2V
I
= 2mA
C
50
Ta= 25˚C
20
)
10
µ s
(
5
2
1
Response time
0.5
0.2
0.1
0.01
0.1 1 10
Load resistance R
IF= 20mA
V
CE
50 10075
(˚C
a
t
f
)
(kΩ
L
=5V
)
t
r
t
d
t
Collector-emitter saturation voltage
0.10
025-25
Ambient temperature T
50 10075
(˚C
a
)
8
Test Circuit for Response Time
V
CC
R
Input R
D
s
L
Output
Output
Input
10%
t
d
t
90%
t
s
t
r
f
GP1S55T
Fig.10 Frequency Response
VCE=2V
I
= 2mA
C
RL=
10kΩ
10
)
Ta= 25˚C
1kΩ
5
0
)
dB
(
-5
-10
Voltage gain Av
-15
-20
25
3
10
4
55 5
222
10
Frequency f (Hz
Fig.12 Relative Collector Current vs.
Shield Distance(1
100
)
%
(
50
Relative collector current
)
= 20mA
I
F
VCE=5V
Ta= 25˚C
Shield
(
Detector center
-+
100Ω
0
10
L
Detector
)
Fig.11 Collector Dark Current vs.
Ambient Temperature
-6
10
VCE= 20V
5
2
)
A
-7
(
10
5
CEO
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
6
10
- 25 0 25 10050 75
Ambient temperature T
a
(˚C
)
Fig.13 Relative Collector Current vs.
Shield Distance(2
100
)
%
(
50
Relative collector current
)
= 20mA
I
F
VCE=5V
(
Detector center
= 25˚C
T
a
0
+
)
Detector
Shield
L
0
- 0.4 - 0.3 - 0.2 - 0.1
- 0.5
0 0.1 0.2 0.3 0.4 0.5
Shield distance L (mm
)
■ Precautions for Use
(1)
In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, isopropyl alcohol
(2)
As for other general cautions, refer to the chapter “ Precautions for Use .”
-2 -1 0 1 2
Shield distance L (mm
)
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