Sharp GP1S55T Datasheet
GP1S55T
GP1S55T
Compact, High Sensing
Accuracy Narrow Gap
Type Photointerrupter
■ Features
1. Compact package (Case height: 8mm
2. High sensing accuracy
(Slit width••• Detector side: 0.15mm,
Emitter side: 0.5mm
)
3. Easy positioning to PWB with positioning
pin
4. PWB direct mounting type
)
■ Applications
1. OA equipment such as FDDs. printers,
facsimiles
2. VCRs , cassette decks
3. Optoelectronic switches, electronic
counters, edge sensors
■ Outline Dimemsions
A-A’ section
(
C1
D
0 - 4.5
(
2.54
Internal connection
diagram
3
4
Slit width of
emitter side
+
0.3
-
0.1
)
0.5
)
4-0.4
2
1
)
5.5
(
Detector center
+
-
(
Unit : mm
5.0
(
11.0
Slit width of detector side
+ 0.3
2.0
- 0
BA
GP1S55
A’B’
0.3
0.1
(
7.4
±
10.2
41
1 Anode
2 Cathode
* Unspecified tolerances
shall be as follows;
Dimensions(d)Tolerance
6.0<d<=18.0 ± 0.2
* ( ): Reference dimensions
2-0.7 2.0
)
0.15
2 - φ 0.7
23
d<=6.0 ± 0.1
B-B’ section
±
0.15
8.0
MIN.
12.0
±
0.05
3 Collector
4 Emitter
0.07
)
)
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Forward current 50 mA
*1
Input
Peak forward current
Reverse voltage 6 V
Power dissipation 75 mW
Collector-emitter voltage 35 V
Output
Emitter-collector voltage 6 V
Collector current 20 mA
Collector power dissipation 75 mW
Operating temperature - 25 to + 85 ˚C
Storage temperature - 40 to + 100 ˚C
*2
Soldering temperature
*1 Pulse width<=100µs, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
I
FM
V
R
1A
P
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
260 ˚C
GP1S55T
■ Electro-optical Characteristics
Parameter
Forward voltage - 1.2 1.4 V
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs.
Ambient Temperature
Peak forward voltage - 3 4 V
Reverse current - - 10 µ A
Collector dark current Collector Current Ic
Collector-emitter saturation
voltage
Rise time - 5 25 µ s
Fall time - 6 30 µ s
)
mA
(
60
50
40
F
30
Response time
Symbol
V
F
V
FM
I
R
I
CEO
V
CE(sat
t
r
t
r
I
F =20mA
I
FM =0.5A
V
R =3V
=20V
V
CE
= 20mA, VCE=5V
1
F
)
I
= 40mA, IC= 0.6mA
F
V
= 2V, IC= 2mA
CE
= 100Ω
R
L
(
Ta = 25˚C
Conditions MIN. TYP. MAX. Unit
1 100 nA
0.6 - - mA
- - 0.4 V
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
120
)
100
mW
(
80
75
60
)
20
Forward current I
10
0
- 25 0 25 50 75 85 100
Ambient temperature T
Fig. 3 Peak Forward Current vs.
Duty Ratio
Pulse width<=100 µs
10
Duty ratio
Ta= 25˚C
-
1
2000
)
1000
mA
(
FM
500
200
100
Peak forward current I
50
20
-
2
52525
10
(˚C
a
40
20
Collector power dissipation Pc
0
)
- 25 0 25 50 75 85 100
Ambient temperature T
(˚C
a
)
Fig. 4 Forward Current vs.
Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
5
2
0
10
1
0
Ta= 75˚C
50˚C
0.5 1 1.5 2 2.5 3
Forward voltage V
25˚C
0˚C
- 25˚C
)
(V
F
Loading...