Sharp GP1S39 Datasheet

GP1S39

GP1S39

Subminiature, Double-phase
Output, Wide Gap
Photointerrupter

■ Features

1. Ultra-compact package

2. PWB mounting type

3. Double-phase phototransistor output type
for detecting of rotation direction and count

4. Wide gap between light emitter and

detector: 1.5mm

5. Slit width: 0.8mm

6. Detecting pitch: 0.6mm

■ Applications

1. Mouses

2. Cameras

F

R

C

C

tot

opr

stg

sol

(

Rating Unit

50 mA

35 V

20 mA
75 mW

100 mW

- 25 to + 85

- 40 to + 100
260 ˚C

■ Absolute Maximum Ratings

Parameter

Forward current I

Input

Reverse voltage V
Power dissipation P 75 mW

Collector-emitter voltage

Emitter-collector voltage

Output

Collector current I
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature T

*1

Soldering temperature

*1 For 5 seconds

Symbol

V

CE1O

V

CE2O

V

E1CO

V

E2CO

P

P

T

T

Ta= 25˚C

)

6V

6V

˚C
˚C

5
4

)

3.5

0.4

(

)(

0.37

1mm or more

(

Unit : mm

4.0

A-A' section

Slit width of
emitter side

■ Outline Dimensions

Internal connection diagram

Rest of gate

(2)

B-B' section

(

1.0

)

0.37

(

C0.4

PT1

PT2

)

4.5

)

0.7
)(

0.7

(

5

4

1.51.5

❈

3.14

Center of light path

* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by ❈ refer

to those measured from the lead base.

* Internal elements are appeared because of thin external mold

resin marked

1

23

1.5

AB

(

)

C0.3

A'B'

+0.2

0.15

- 0.1

1

23

Soldering area

1 Anode
2 Cathode
3 Emitter2
4 Emitter1
5 Collector

4.7

MIN.

4.0

❈1.27❈1.27

(

)

0.8

)

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

GP1S39

■ Electro-optical Characteristics

Parameter Symbol MIN. TYP. MAX. Unit
Input
Output I

Transfer
charact­eristics

Fig. 1 Forward Current vs. Ambient

Temperature

)

mA

(

Forward current I

Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector current ratio I
Collector-emitter saturation voltage

Response time

60

50

40

F

30

20

10

Rise time - 50 150 µs
Fall time - 50 150 µs

C1/IC2

V

CE(sat

CEO

t
t

(

Ta =25˚C

)

Conditions

F

R

C

r

f

F

V

R

V

CE

V

CE

V

CE

)

= 8mA, IC=50µA

I

F

V

CE

R

L

=3V

= 20V
= 5V, IF= 4mA
= 5V, IF= 4mA

= 5V, IC= 100 µ A

= 1 000 Ω

= 20mA

I

- 1.2 1.4 V

--10µA

- - 100 nA

130 - 520 µA

0.67 - 1.5 -

- - 0.4 V

Fig. 2 Power Dissipation vs.

Ambient Temperature

120

P

P, P

tot

c

100

)
mW

80

(

60

40

Power dissipation P

20

0

- 25 0 25 50 75 100
Ambient temperature Ta (˚C

85

)

Fig. 3 Forward Current vs. Forward Voltage

500

200

)

100

mA

(

50

F

20

10

Forward current I

Ta= 75˚C

50˚C

5

2
1

0 0.5 1 1.5 2 2.5 3

Forward voltage VF (V

25˚C

- 25˚C

)

0˚C

0

- 25 0 25 50 75 100
Ambient temperature Ta (˚C

85

)

Fig. 4 Collector Current vs.

Forward Current

VCE=5V

1.0

= 25˚C

T

a

)

0.8

mA

(

C

0.6

0.4

Collector current I

0.2

0

0510

)

Forward current I

F

(mA