SGS Thomson Microelectronics TEA2025D, TEA2025B Datasheet
DUAL OR BRIDGE CONNECTION MODES
FEWEXTERNAL COMPONENTS
SUPPLYVOLTAGEDOWN TO 3V
HIGHCHANNEL SEPARATION
VERYLOWSWITCHON/OFF NOISE
MAX GAIN OF 45dB WITH ADJUST EXTER-
NAL RESISTOR
SOFT CLIPPING
THERMAL PROTECTION
CC
< 15V
CC
= 6V, RL=4Ω
=9V, RL=4Ω
CC
=3V, RL=4Ω
CC
3V < V
P=2•1W, V
P=2•2.3W, V
P=2•0.1W, V
ABSOLUTE MAXIMUMRATINGS
TEA2025B
TEA2025D
STEREO AUDIO AMPLIFIER
POWERDIP12+2+2 SO20 (12+4+4)
ORDERING NUMBERS: TEA2025B (PDIP)
TEA2025D (SO)
DESCRIPTION
The TEA2025B/Dis a monolithic integrated circuit
in 12+2+2 Powerdip and 12+4+4 SO, intendedfor
use as dual or bridge power audio amplifier portable radiocassette players.
Symbol Parameter Test Conditions Unit
V
S
Supply Voltage 15 V
I
Ouput Peak Current 1.5 A
O
T
J
Junction Temperature 150 °C
T
stg
Storage Temperature 150 °C
BLOCK DIAGRAM
OUT 1BOOT 1GNDGNDFEEDIN 1+GND(Sub)
THERMAL
PROTECT.
START
CIRCUIT
SVR
IN 2+
50Ω
10KΩ
-
+
DECOUPLING
2
+
10KΩ
11
5KΩ
V
S+
BRIDGE
2
50Ω
June 1994
D94AU120
50Ω
FEED GND GND BOOT 2 OUT 2
1/9
TEA2025B- TEA2025D
POWERDIP 12+2+2 PIN CONNECTION (Topview)
BRIDGE
OUT.2
BOOT.2
GND
GND
FEEDBACK
IN.2 (+)
SVR
SO12+4+4 PINCONNECTION (Top view)
BRIDGE
OUT 2
1
2
3
4
5
6
7
8
1
2
20
19
16
15
14
13
12
11
10
+Vs
OUT.1
BOOT.1
GND
GND
FEEDBACK
IN.1 (+)
9
GND (sub.)
V
CC
OUT 1
BOOT 2
GND
GND
GND
GND
FEEDBACK
IN 2(+)
3
4
5
6
7
8
9 IN 1(+)
18
17
16
15
14
13
12
BOOT 1
GND
GND
GND
GND
FEEDBACK
SVR 10 GND(Sub)11
D94AU119
THERMAL DATA
Symbol Description SO 12+4+4 (*) PDIP 12+2+2 (**) Unit
R
th j-case
R
th j-amb
(*) The R
(**) The R
2/9
Thermal ResistanceJunction-case
Thermal ResistanceJunction-ambient
is measured with 4sqcm copper area heatsink
th j-amb
is measured on devices bonded on a10 x 5 x 0.15cm glass-epoxy substrate with a35µm thick copper surface of 5 cm
th j-amb
Max
Max
15
65
15
60
°C/W
°C/W
2
.
TEA2025B - TEA2025D
ELECTRICAL CHARACTERISTICS (T
=25°C, VCC= 9V,Stereo unless otherwise specified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Supply Voltage 3 12 V
V
S
Quiescent Current 35 50 mA
I
Q
Quiescent OutputVoltage 4.5 V
V
O
A
Voltage Gain
V
∆A
Voltage Gain Difference ±1dB
V
Input Impedance 30 KΩ
R
j
PO
Output Power(d = 10%) Stereo 8 (per channel) 9V
Stereo
Bridge
Bridge
d Distortion Vs =9V; R
SVR Supply VoltageRejection f = 100Hz, V
=0
R
E
) Input Noise Voltage
N(IN
R
G
G
=104Ω
CT Cross-Talk f = 1KHz, R
4Ω
8Ω
9V
4Ω
6V
8Ω
6V
16Ω
6V
32Ω
6V
4Ω
3V
32Ω
3V
8Ω
12V
8Ω
9V
4Ω
6V
8Ω
6V
16Ω
3V
32Ω
3V
=4Ω
L
= 0.5V, Rg=0 40 46 dB
R
= 10KΩ
g
Stereo
Bridge
43
49
1.7
45
51
2.3
47
53
1.3
0.7
1
0.6
0.25
0.13
0.1
0.02
2.4
4.7
2.8
1.5
0.18
0.06
0.3
1.5
0.5
1.5
3
40 52 dB
3
6
dB
W
W
%
mV
Term. N° (PDIP) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
DC VOLT (V) 0.04 4.5 8.9 0 0 0.6 0.04 8.5 0 0.04 0.6 0 0 8.9 4.5 9
Figure 1: Bridge Application(Powerdip)
Figure2: StereoApplication (Powerdip)
C1
C10
C2
C1 1
C3
C4
C8
C5
C9
C6
C7
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