SGS Thomson Microelectronics BU810 Datasheet
MEDIUM VOLTAGE NPN FAST-SWITCHING
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN DARLINGTON
■ LOW BASE-DRIVE REQUIREMENTS
■ FAST SWITCHING SPEED
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ HORIZONTAL DEFLECTION FOR
MONOCH R OM E TVs
■ GENERAL PURPOSE SWITCHING
BU810
DARLINGTON TRANSISTOR
3
2
1
DESCRIPTION
TO-220
The BU810 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
R = 200 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 600 V
CBO
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 7 A
C
Collector Peak Current 10 A
CM
I
Base Current 2 A
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Junction Temperature 150
j
≤ 25 oC75W
case
o
C
o
C
June 1997
1/4
BU810
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.66
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
CES
CEO
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
= 600 V 200 µA
V
CE
VCE = 400 V 1 mA
Current (IB = 0)
∗ Emitter Cut-off
I
EBO
Current (I
V
CEO(sus)
∗ Collector-Emitter
= 0)
C
= 5 V 150 mA
V
EB
IC = 0.1 A 400 V
Sustaining Voltage
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
V
Diode Forward Voltage IF = 7 A 3 V
F
IC = 2 A IB = 20 mA
I
= 4 A IB = 200 mA
C
I
= 7 A IB = 0.7 A
C
IC = 2 A IB = 20 mA
I
= 4 A IB = 200 mA
C
2
2.5
3
2.2
3
RESIS TIVE SWITC H ING TIMES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
on
s
t
f
Turn-on Time
Storage Time
Fall Time
V
= 250V IC = 2A IB1 = 20mA
Clamp
V
= -5 V
BE(off)
0.6
1.5
0.5
V
V
V
V
V
µs
µs
µs
INDUCTIVE SWIT CHING TIMES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
s
t
f
s
t
f
Storage Time
Fall Time
Storage Time
Fall Time
V
= 250V IC = 2A IB1 = 20mA
Clamp
V
= -5 V L = 500µH
BE(off)
V
= 250V IC = 7A IB1 = 0.7A
Clamp
V
= -5 V L = 500µH
BE(off)
1.5
0.4
1.5
0.4
µs
µs
µs
µs
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