SGS Thomson Microelectronics BU806, BU807 Datasheet
BU806
®
MEDIUM VOLTAGE NPN FAST SWITCHING
■ STMicroelectronics P REF ERRED
SALESTYPES
■ NPN DARLINGTONS
■ LOW BASE-DRIVE REQUIREMENTS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■ HORIZONTAL DEFLECTION FOR
MONOCHRO M E TVs
DESCRIPTION
The devices are silicon epitaxial planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 oCRT video displays.
BU807
DARLINGTON TR ANSISTORS
3
2
1
TO-220
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BU806 BU807
V
V
V
V
I
I
P
T
January 1999
Collector-base Voltage (IE = 0) 400 330 V
CBO
Collector-emitter Voltage (VBE = -6V) 400 330 V
CEV
Collector-emitter Voltage (IB = 0) 200 150 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 15 A
CM
Damper Diode Peak Forward Current 10 A
DM
I
Base Current 2 A
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max Operating Junction Temperature 150
j
case
< 25 oC
60 W
o
C
o
C
1/4
BU806 / BU807
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEV
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (V
= -6V)
BE
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
for BU807 V
for BU806 V
for BU807 V
for BU806 V
= 6 V 3.5 mA
V
EB
IC = 100 mA for BU807
for BU806
= 330 V
CE
= 400 V
CE
= 330 V
CE
= 400 V
CE
100
100
100
100
150
200
IC = 5A IB = 50mA 1.5 V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 5A IB = 50mA 2.4 V
Saturation Voltage
V
∗ Damper Diode
F
IF = 4A 2 V
Forward Voltage
RESISTIVE LOAD
on
off
t
s
f
Turn-on Time
Turn-off Time
Storage Time
Fall Time
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
I
= 5 A VCC = 100 V
C
I
= 50 mA IB2 = -500 mA
B1
0.35
0.4
0.55
0.2
1
µA
µA
µA
µA
V
V
µs
µs
µs
µs
2/4
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