SGS Thomson Microelectronics BU508DFI, BU208D Datasheet
BU208D
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPES
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISEDISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
■ JEDEC TO-3METAL CASE
■ NPNTRANSISTORWITH INTEGRATED
FREEWHEELINGDIODE
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
DESCRIPTION
The BU208D and BU508DFI are manufactured
using Multiepitaxial Mesa technology for
cost-effectivehigh performance and use a Hollow
Emitter structure to enhanceswitching speeds.
BU508DFI
NPN POWER TRANSISTORS
1
2
TO-3 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
For TO-3 :
C = Tab
E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
November 1999
Collect or-Emit t e r Voltage (VBE= 0 ) 1500 V
CES
Collect or-Emit t e r Voltage (IB=0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current (tp<5ms) 15 A
CM
TO - 3 ISOWATT218
Tot al Dissipation at Tc=25oC 150 50 W
tot
Storage Temperature -65 to 175 -65 to 150
stg
Max. Ope r ating Junc t io n T emperature 175 150
T
j
o
C
o
C
1/7
BU208D / BU508DFI
THERMAL DATA
R
thj-case
Ther mal Resist ance Junction-c a s e Max 1 2.5
TO-3 ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Current
(I
=0)
C
∗ Co llector-Emitt er
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
=5V 300 mA
V
EB
I
= 10 0 m A 700 V
C
1
2
Sust aining V o lt age
=0)
(I
B
V
∗ Collec t or -Emitt er
CE(sat)
IC=4.5A IB=2A 1 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=4.5A IB=2A 1.3 V
Saturation Voltage
INDUCTIV E LOAD
t
V
f
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Ti me
s
t
Fall Time
f
Diode Forward Voltage IF=4A 2 V
F
Tr ansition F requency IC=0.1A VCE= 5 V f = 5 MHz 7 MHz
T
IC=4.5A hFE=2.5 VCC=140V
=0.9mH LB=3µH
L
C
7
550
mA
mA
µs
ns
Safe Operating Area (TO-3) Safe OperatingArea (ISOWATT218)
2/7
BU208D / BU508DFI
DCCurrent Gain
Base Emitter Saturation Voltage
Collector EmitterSaturation Voltage
SwitchingTime InductiveLoad
SwitchingTime InductiveLoad (see figure 1)
SwitchingTime Percentancevs. Case
3/7
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