SGS Thomson Microelectronics BU505 Datasheet
HIGH VOLTAGE NPN MULTIEPITAXIAL
FAST-SWITCHING TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHING SPEED
■ LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE P OW ER SUP P LIE S
DESCRIPTION
The BU505 is a high voltage NPN fastswitching
transistor designed to be used in lighting
application, like electronic ballas for fluorescent
lamps.
Its characteristics make it also ideal for power
supplies.
TO-220
BU505
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 1500 V
CES
Collector-Emitter Voltage (IB = 0) 700 V
CEO
I
Collector Current 2.5 A
C
Collector Peak Current (tp < 5 ms) 4 A
CM
I
Base Current 1 A
B
Base Peak Current (tp < 5 ms) 2 A
BM
Total Dissipation at Tc ≤ 25 oC75W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
July 1997
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BU505
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.67
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
Collector-emitter
= V
V
CE
VCE = V
V
CES
CES Tcase
= 5 V 1 mA
EB
= 125oC
0.151mA
IC = 100 mA L = 25mH 700 V
Sustaining Voltage
V
∗ Collector-emitter
CE(sat)
IC = 2 A IB = 0.9 A 5 V
Saturation Voltage
V
BE(sat)
∗ Base-emitter
IC = 2 A IB = 0.9 A 1.3 V
Saturation Voltage
I
s/b
Second Breakdown
VCE = 120 V t = 200 µs2 A
Current
t
Storage Time V
s
I
B1
R
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
= 250V IC = 2 A
Clamp
= 0.7 A V
= 0 L = 200µH
bb
be(off)
= -5V
2
350
mA
µs
ns
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