SGS Thomson Microelectronics BU407 Datasheet
HIGH CURR ENT NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
APPLICATIONS
■ HORIZONTAL DEFLECTION FOR
MONOCH R OM E TVs
DESCRIPTION
The BU407 is a silicon epitaxial planar NPN
transistors in Jedec TO-220 plastic package.
They are fast switching, high voltage devices foe
use in horizontal deflection output stages of
medium and small screens MTV receivers with
o
110
CRT as monochrome computers terminals.
TO-220
BU407
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) 330 V
CBO
Collector-Emitter Voltage (VBE = -1.5 V) 330 V
CEV
Collector-Emitter Voltage (IB = 0) 150 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
I
Collector Current 7 A
C
Collector Peak Current (repetitive) 10 A
CM
Collector Peak Current (tp = 10 ms) 15 A
CM
I
Base Current 4 A
B
Total Dissipation at Tc ≤ 25 oC60W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 1997
1/4
BU407
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max 2.08
Thermal Resistance Junction-ambient Max 70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CE(sat)
CES
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-emitter
=330 V
V
CE
V
=200 V
CE
V
=200 V T
CE
= 6 V 1 mA
V
EB
= 100oC
case
5
100
1
IC = 5 A IB = 0.5 A 1 V
Saturation Voltage
V
BE(sat)
∗ Base-emitter
IC = 5 A 1.2 V
Saturation Voltage
f
Transition-Frequency IC = 1 A VCE = 5 V
T
10 16 MHz
f = 1 MHz
∗∗ Turn-off Time IC = 5 A I
t
off
I
s/b
Second Breakdown
VCE = 40 V t = 10 ms 4 A
= 0.5 A 0.75 µs
Bend
Collector Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
mA
µA
mA
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