SGS Thomson Microelectronics BU508AFI, BU508A, BU208A Datasheet

BU208A
HIGH VOLTAGE FAST-SWITCHING
STMicroelectronicsPREFERRED
SALESTYPES
HIGH VOLTAGE CAPABILITY
U.L.RECOGNISEDISOWATT218 PACKAGE
JEDEC TO-3 METAL CASE.
APPLICATIONS:
HORIZONTALDEFLECTIONFOR COLOUR
TV
DESCRIPTION
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switchingspeeds.
BU508A/BU508AFI
NPN POWER TRANSISTORS
TO-3
1
2
3
2
TO-218 ISOWATT218
1
3
2
1
INTERNAL SCHEMATIC DIAGRAM
For TO-3 : C = Tab E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V V V
I
P
T
Collect or-Emitter Voltage (VBE=0) 1500 V
CES
Collect or-Emitter Voltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current (tp<5ms) 15 A
CM
TO - 3 TO - 218 ISOWATT218
Tot al Dissipation at Tc=25oC 150 125 50 W
tot
Storage Temp erature -65 to 175 -65 to 150 -65 to 150
stg
Max. Ope r ating Jun ct ion Te m pe rature 175 150 150
T
j
o
C
o
C
November 1999
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BU208A / BU508A / BU508AFI
THERMAL DATA
R
thj-case
Ther mal Res ist ance J unctio n-c a s e Max 1 1 2.5
TO-3 TO-218 ISOWA TT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off Current (V
BE
=0)
Emitt er Cut -off Current (I
=0)
C
Collect or- Emit t er
V
= 1500 V TC=125oC
CE
= 1500 V
V
CE
=5V 100 µA
V
EB
I
= 100 m A 700 V
C
1 2
Sust aining Voltage
=0)
(I
B
V
EBO
Emit ter Base Volta ge (I
Co llector-Emit t er
V
CE(sat)
C
=0)
I
=10mA 10 V
E
IC=4.5A IB=2A 1 V
Saturation Voltage
Ba se- Emitt er
V
BE(sat)
IC=4.5A IB=2A 1.3 V
Saturation Voltage INDUCTIVE LOAD
t
f
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
Storage Ti me
s
t
Fall Time
f
Tr ansition Freque n cy IC=0.1A VCE= 5 V f = 5 MHz 7 MHz
T
IC=4.5A hFE=2.5 VCC=140V
=0.9mH LB=3µH
L
C
7
0.55
mA mA
µs µs
Safe Operating Area(TO-3) Safe Operating Areas (TO-218/ISOWATT218)
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BU208A / BU508A / BU508AFI
DCCurrent Gain
Base Emitter SaturationVoltage
Collector EmitterSaturation Voltage
SwitchingTime Inductive Load
SwitchingTime InductiveLoad (see figure 1)
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