SGS Thomson Microelectronics BTW69N-800, BTW69N-600, BTW69N-1200, BTW69N-1000, BTW69-800 Datasheet
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BTW 69 (N)
March 1995
SCR
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
BTW 69
BTW 69 N
Tc=70°C
Tc=75°C
50
55
A
I
T(AV)
Average on-state current (180°
conduction angle,single phase circuit)
BTW 69
BTW 69 N
Tc=70°C
Tc=75°C
32
35
A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp=8.3 ms 525 A
tp=10 ms 500
I2tI
2
t value tp=10 ms 1250 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs
100 A/µs
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230 °C
TOP 3
(Plastic)
K
A
G
.HIGHSURGECAPABILITY
.HIGH ON-STATECURRENT
.HIGH STABILITYAND RELIABILITY
.BTW69 Serie :
INSULATEDVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: E81734)
DESCRIPTION
Symbol Parameter BTW 69 BTW 69 / BTW 69 N Unit
200 400 600 800 1000 1200
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The BTW 69 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATECHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 50 °C/W
Rth (j-c) DC Junction to case for DC BTW 69 0.9 °C/W
BTW 69 N 0.8
Symbol Test Conditions Value Unit
BTW 69 BTW 69 N
I
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 80 mA
V
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=V
DRMIG
= 200mA
dIG/dt = 1.5A/µs
Tj=25°C TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C TYP 50 mA
I
H
IT= 500mA gate open Tj=25°C MAX 150 mA
V
TM
BTW 69 ITM= 100A
BTW 69 N ITM= 110A tp= 380µs
Tj=25°C MAX 1.9 2.0 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.02 mA
Tj= 125°C6
dV/dt Linear slope up to
VD=67%V
DRM
gate open
V
DRM
≤ 800V
V
DRM
≥ 1000V
Tj= 125°C MIN 500
250
V/µs
tq VD=67%V
DRMITM
= 110A VR= 75V
dITM/dt=30 A/µsdV
D
/dt= 20V/µs
Tj= 125°C TYP 100 µs
P
G (AV)
=1W PGM= 40W (tp = 20 µs) I
FGM
= 8A (tp = 20 µs) V
RGM
=5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 69 (N)
2/5
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