SGS Thomson Microelectronics BTW67-800, BTW67-600, BTW67-1200 Datasheet
BTW67 and BTW69 Series
STANDARD 50A SCRs
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
50 A
600to1200 V
80 mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor c ontrol.
RD91
(BTW67)
TOP3
(BTW69)
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), com plying
with UL standards (file ref: E81734).
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
²
I
tI
dI/dt
I
GM
P
G(AV)
T
stg
Tj
V
RGM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitivesurge peakon-statecurrent tp = 8.3 ms
²
t Value for fusing
Critical rate of rise of on-state current I
,tr≤100 ns
2xI
GT
Peak gate current tp = 20 µs Tj = 125°C 8 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage 5 V
=
G
RD91 Tc = 70°C
50 A
TOP3 Ins. Tc = 75°C
RD91 Tc = 70°C
32 A
TOP3 Ins. Tc = 75°C
610
Tj = 25°C
tp = 10 ms 580
Tj = 25°C 1680
F = 60 Hz Tj = 125°C 50 A/µs
-40to+150
-40to+125
A
2
A
S
°C
April 2001 - Ed: 4
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BTW67 and BTW69 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
VD=12V RL=33Ω
V
GT
V
GD
I
H
I
L
dV/dt V
V
TM
V
t0
R
d
I
DRM
I
RRM
VD=V
DRMRL
=3.3kΩ
IT=500mA Gateopen
IG=1.2I
=67%V
D
GT
DRM
Gate open
ITM=100A tp=380µs
Threshold voltage Tj = 125°C MAX. 1.0 V
Dynamic resistance Tj = 125°C MAX. 8.5 mΩ
V
DRM=VRRM
Tj = 125°C MIN.
Tj = 125°C MIN. 1000 V/µs
Tj = 25°C MAX. 1.9 V
Tj = 25°C MAX. 10 µA
Tj = 125°C 5 mA
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
Junction to case (DC) RD91 (Insulated) 1.0 °C/W
Junction to ambient
MIN. 8
MAX. 80
MAX. 1.3 V
0.2 V
MAX. 150 mA
MAX.
200
TOP3 Insulated 0.9
TOP3 Insulated 50
mA
mA
°C/W
PRODUCT SELECTOR
PartNumber
600 V 800 V 1200 V
BTW67-xxx X X X 80 mA RD91
BTW69-xxx X X X 80 mA TOP3 Ins.
Voltage (xxx)
Sensitivity
Package
ORDERING INFORMATION
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
BTW67-xxx BTW67xxx 20.0 g 25 Bulk
BTW69-xxx BTW69xxx 4.5 g 120 Bulk
Note:xxx=voltage
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